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Extract from the Register of European Patents

EP About this file: EP0204499

EP0204499 - High voltage isolation circuit for CMOS networks [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  28.08.1992
Database last updated on 02.11.2024
Most recent event   Tooltip07.07.2007Change - inventorpublished on 08.08.2007  [2007/32]
Applicant(s)For all designated states
ADVANCED MICRO DEVICES, INC.
901 Thompson Place P.O. Box 3453
Sunnyvale CA 94088-3453 / US
[N/P]
Former [1986/50]For all designated states
ADVANCED MICRO DEVICES, INC.
901 Thompson Place P.O. Box 3453
Sunnyvale, CA 94088 / US
Inventor(s)01 / Venkatesh, Bhimachar
460 Roosevelt Avenue
Sunnyvale California / US
[1986/50]
Representative(s)Wright, Hugh Ronald, et al
Brookes Batchellor LLP
1 Boyne Park
Tunbridge Wells Kent TN4 8EL / GB
[N/P]
Former [1986/50]Wright, Hugh Ronald, et al
Brookes & Martin 52/54 High Holborn
London WC1V 6SE / GB
Application number, filing date86304039.028.05.1986
[1986/50]
Priority number, dateUS1985073892529.05.1985         Original published format: US 738925
[1986/50]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0204499
Date:10.12.1986
Language:EN
[1986/50]
Type: A3 Search report 
No.:EP0204499
Date:14.12.1988
Language:EN
[1988/50]
Search report(s)(Supplementary) European search report - dispatched on:EP24.10.1988
ClassificationIPC:H03K19/017, H03K19/003
[1986/50]
CPC:
H03K19/00315 (EP,US); H03K19/01721 (EP,US)
Designated contracting statesAT,   BE,   CH,   DE,   FR,   GB,   IT,   LI,   LU,   NL,   SE [1986/50]
TitleGerman:Hochspannungsisolierungsschaltung für CMOS-Netzwerke[1986/50]
English:High voltage isolation circuit for CMOS networks[1986/50]
French:Circuit d'isolation haute tension pour réseaux CMOS[1986/50]
File destroyed:12.06.1999
Examination procedure27.02.1989Examination requested  [1989/17]
23.10.1990Despatch of a communication from the examining division (Time limit: M04)
07.01.1991Reply to a communication from the examining division
29.01.1991Despatch of a communication from the examining division (Time limit: M04)
28.03.1991Reply to a communication from the examining division
04.11.1991Despatch of communication of intention to grant (Approval: Yes)
10.01.1992Communication of intention to grant the patent
22.04.1992Application deemed to be withdrawn, date of legal effect  [1992/43]
22.05.1992Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time  [1992/43]
Fees paidRenewal fee
19.05.1988Renewal fee patent year 03
28.05.1989Renewal fee patent year 04
22.05.1990Renewal fee patent year 05
19.12.1990Renewal fee patent year 06
Penalty fee
Additional fee for renewal fee
01.06.199207   M06   Not yet paid
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Documents cited:Search[Y]US4511811  (GUPTA ANIL [US]);
 [Y]US4442481  (BRAHMBHATT DHAVAL J [US]);
 [A]EP0136771  (TOSHIBA KK [JP]);
 [A]EP0090116  (FUJITSU LTD [JP])
 [Y]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 26, no. 10A, March 1984, pages 5296-5298, New York, US; A.H. TABER: "Circuit technique to help prevent CMOS latch-up"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.