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Extract from the Register of European Patents

EP About this file: EP0217718

EP0217718 - Nonvolatile memory circuit [Right-click to bookmark this link]
Former [1987/15]Improved nonvolatile storage cell
[1992/30]
StatusNo opposition filed within time limit
Status updated on  27.05.1993
Database last updated on 07.10.2024
Most recent event   Tooltip27.05.1993No opposition filed within time limitpublished on 14.07.1993 [1993/28]
Applicant(s)For all designated states
STMicroelectronics, Inc.
1310 Electronics Drive
Carrollton, TX 75006-5039 / US
[N/P]
Former [1992/19]For all designated states
SGS-THOMSON MICROELECTRONICS, INC.
1310 Electronics Drive
Carrollton Texas 75006 / US
Former [1987/15]For all designated states
THOMSON COMPONENTS-MOSTEK CORPORATION
1310 Electronics Drive
Carrollton Texas 75006 / US
Inventor(s)01 / Leuschner, Horst
THOMSON-CSF SCPI 19 avenue de Messine
F-75008 Paris / FR
[1987/15]
Representative(s)Driver, Virginia Rozanne, et al
Page White & Farrer Limited
Bedford House
21A John Street
London WC1N 2BF / GB
[N/P]
Former [1990/35]Driver, Virginia Rozanne, et al
Page White & Farrer 54 Doughty Street
London WC1N 2LS / GB
Former [1987/15]Ruellan-Lemonnier, Brigitte
THOMSON CONSUMER ELECTRONICS 9 Place des Vosges La Défense 10
F-92400 Courbevoie / FR
Application number, filing date86402196.903.10.1986
[1987/15]
Priority number, dateUS1985078349303.10.1985         Original published format: US 783493
[1987/15]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0217718
Date:08.04.1987
Language:EN
[1987/15]
Type: A3 Search report 
No.:EP0217718
Date:02.05.1990
Language:EN
[1990/18]
Type: B1 Patent specification 
No.:EP0217718
Date:22.07.1992
Language:EN
[1992/30]
Search report(s)(Supplementary) European search report - dispatched on:EP12.03.1990
ClassificationIPC:G11C16/00, G11C11/00
[1992/30]
CPC:
G11C16/30 (EP,US); G11C17/00 (KR); G11C14/00 (EP,US);
G11C16/10 (EP,US)
Former IPC [1990/18]G11C17/00, G11C11/00
Former IPC [1987/15]G11C17/00
Designated contracting statesAT,   DE,   FR,   GB,   IT,   NL [1987/15]
TitleGerman:Nichtflüchtiger Speicher[1992/30]
English:Nonvolatile memory circuit[1992/30]
French:Mémoire non-volatile[1992/30]
Former [1987/15]Nichtflüchtige Speicherzelle
Former [1987/15]Improved nonvolatile storage cell
Former [1987/15]Cellule de mémoire non-volatile
Examination procedure19.06.1990Examination requested  [1990/33]
11.02.1991Despatch of a communication from the examining division (Time limit: M04)
19.06.1991Reply to a communication from the examining division
23.09.1991Despatch of communication of intention to grant (Approval: Yes)
22.01.1992Communication of intention to grant the patent
13.04.1992Fee for grant paid
13.04.1992Fee for publishing/printing paid
Opposition(s)23.04.1993No opposition filed within time limit [1993/28]
Fees paidRenewal fee
22.09.1988Renewal fee patent year 03
22.09.1989Renewal fee patent year 04
15.10.1990Renewal fee patent year 05
24.10.1991Renewal fee patent year 06
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Lapses during opposition  TooltipAT22.07.1992
NL22.07.1992
[1993/15]
Former [1993/14]NL22.07.1992
Documents cited:Search[A]GB2028615  (SIEMENS AG);
 [A]US4393481  (OWEN WILLIAM H, et al);
 [A]US4408303  (GUTERMAN DANIEL C [US], et al);
 [A]EP0144637  (IBM [US])
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.