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Extract from the Register of European Patents

EP About this file: EP0263318

EP0263318 - Semiconductor memory [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  24.12.1993
Database last updated on 21.08.2024
Most recent event   Tooltip24.12.1993No opposition filed within time limitpublished on 16.02.1994 [1994/07]
Applicant(s)For all designated states
Kabushiki Kaisha Toshiba
72, Horikawa-cho, Saiwai-ku Kawasaki-shi
Kanagawa-ken 210-8572 / JP
[N/P]
Former [1988/15]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP
Inventor(s)01 / Saeki, Yukihiro c/o Patent Division
Kabushiki Kaisha Toshiba 1-1 Shibaura 1-chome
Minato-ku Tokyo 105 / JP
02 / Nakamura, Toshimasa c/o Patent Division
Kabushiki Kaisha Toshiba 1-1 Shibaura 1-chome
Minato-ku Tokyo 105 / JP
[1988/15]
Representative(s)Lehn, Werner, et al
Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20
81904 München / DE
[N/P]
Former [1988/15]Lehn, Werner, Dipl.-Ing., et al
Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20
D-81904 München / DE
Application number, filing date87113251.010.09.1987
[1988/15]
Priority number, dateJP1986023172130.09.1986         Original published format: JP 23172186
JP1986023180330.09.1986         Original published format: JP 23180386
[1988/15]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0263318
Date:13.04.1988
Language:EN
[1988/15]
Type: A3 Search report 
No.:EP0263318
Date:12.12.1990
Language:EN
[1990/50]
Type: B1 Patent specification 
No.:EP0263318
Date:24.02.1993
Language:EN
[1993/08]
Search report(s)(Supplementary) European search report - dispatched on:EP23.10.1990
ClassificationIPC:G11C16/02
[1993/08]
CPC:
G11C16/0416 (EP,US)
Former IPC [1988/15]G11C17/00
Designated contracting statesDE,   FR,   GB [1988/15]
TitleGerman:Halbleiterspeicher[1988/15]
English:Semiconductor memory[1988/15]
French:Mémoire à semi-conducteurs[1988/15]
Examination procedure10.09.1987Examination requested  [1988/15]
26.06.1991Despatch of a communication from the examining division (Time limit: M06)
07.01.1992Reply to a communication from the examining division
24.04.1992Despatch of communication of intention to grant (Approval: Yes)
27.08.1992Communication of intention to grant the patent
23.09.1992Fee for grant paid
23.09.1992Fee for publishing/printing paid
Opposition(s)25.11.1993No opposition filed within time limit [1994/07]
Fees paidRenewal fee
11.09.1989Renewal fee patent year 03
21.09.1990Renewal fee patent year 04
09.09.1991Renewal fee patent year 05
15.09.1992Renewal fee patent year 06
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Documents cited:Search[Y]JP61097976  ;
 [Y]EP0050005  (TOKYO SHIBAURA ELECTRIC CO [JP]);
 [X]US4387444  (EDWARDS COLIN W [GB])
 [Y]  - PATENT ABSTRACTS OF JAPAN, vol. 10, no. 275 (E-438), 18th September 1986; & JP-A-61 097 976 (HITACHI LTD) 16-05-1986, & JP61097976 A 00000000
 [Y]  - 1978 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 16th February 1978, pages 106-107; Y.-F. CHAN: "A 4K CMOS erasable PROM"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.