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EP0241988
European procedure
Extract from the Register of European Patents
EP About this file: EP0241988
| EP0241988 - High mobility semiconductor devices [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 30.04.1994 Database last updated on 02.11.2024 | Most recent event Tooltip | 30.04.1994 | No opposition filed within time limit | published on 22.06.1994 [1994/25] | Applicant(s) | For:GB
PHILIPS ELECTRONICS UK LIMITED 420-430 London Road Croydon CR9 3QR / GB | For:DE
FR
NL
Koninklijke Philips Electronics N.V. Groenewoudseweg 1 5621 BA Eindhoven / NL | [N/P] |
| Former [1987/43] | For:GB
PHILIPS ELECTRONICS UK LIMITED 420-430 London Road Croydon CR9 3QR / GB | ||
| For:DE
FR
NL
Philips Electronics N.V. Groenewoudseweg 1 NL-5621 BA Eindhoven / NL | Inventor(s) | 01 /
Ralph, Hugh Ivor c/o Isa PHILIPS ELECTRONICS New Road Mitcham Surrey CR4 4XY / GB | [1987/43] | Representative(s) | Clark, Jane Anne, et al Philips Electronics UK Limited Patents and Trade Marks Department Cross Oak Lane Redhill, Surrey RH1 5HA / GB | [N/P] |
| Former [1989/05] | Clark, Jane Anne, et al Philips Electronics UK Limited Patents and Trade Marks Department Cross Oak Lane Redhill, Surrey RH1 5HA / GB | ||
| Former [1988/06] | Clark, Jane Anne PHILIPS ELECTRONICS Patents and Trade Marks Department Centre Point New Oxford Street London WC1A 1QJ / GB | ||
| Former [1987/43] | Clark, Jane Anne Philips Electronics UK Limited Patents and Trade Marks Department Cross Oak Lane Redhill, Surrey RH1 5HA / GB | Application number, filing date | 87200641.6 | 06.04.1987 | [1987/43] | Priority number, date | GB19860009337 | 16.04.1986 Original published format: GB 8609337 | [1987/43] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0241988 | Date: | 21.10.1987 | Language: | EN | [1987/43] | Type: | A3 Search report | No.: | EP0241988 | Date: | 02.03.1988 | Language: | EN | [1988/09] | Type: | B1 Patent specification | No.: | EP0241988 | Date: | 30.06.1993 | Language: | EN | [1993/26] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 11.01.1988 | Classification | IPC: | H01L29/203, H01L29/163, H01L29/80, H01L29/78, H01L27/08 | [1987/43] | CPC: |
H01L29/7785 (EP,US)
| Designated contracting states | DE, FR, GB, NL [1987/43] | Title | German: | Halbleiteranordnungen mit hoher Beweglichkeit | [1987/43] | English: | High mobility semiconductor devices | [1987/43] | French: | Dispositifs semi-conducteurs à haute mobilité | [1987/43] | Examination procedure | 23.08.1988 | Examination requested [1988/42] | 13.07.1990 | Despatch of a communication from the examining division (Time limit: M04) | 08.10.1990 | Reply to a communication from the examining division | 20.06.1991 | Despatch of a communication from the examining division (Time limit: M02) | 19.08.1991 | Reply to a communication from the examining division | 23.06.1992 | Despatch of communication of intention to grant (Approval: Yes) | 09.10.1992 | Communication of intention to grant the patent | 22.12.1992 | Fee for grant paid | 22.12.1992 | Fee for publishing/printing paid | Opposition(s) | 31.03.1994 | No opposition filed within time limit [1994/25] | Fees paid | Renewal fee | 25.04.1989 | Renewal fee patent year 03 | 24.04.1990 | Renewal fee patent year 04 | 25.04.1991 | Renewal fee patent year 05 | 29.04.1992 | Renewal fee patent year 06 | 26.04.1993 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | NL | 30.06.1993 | [1994/24] | Documents cited: | Search | [A]EP0171531 (HITACHI LTD [JP]); | [AD]US4163237 (DINGLE RAYMOND [US], et al); | [AP]EP0202383 (IBM [US]) | [A] - ELECTRONICS LETTERS, vol. 21, no. 18, 29th August 1985, pages 823-824, Stevenage, Hert., GB; T.E. ZIPPERIAN et al.: "Strained-quantum-well, modulation-doped, field-effect transistor" | [A] - APPLIED PHYSICS LETTERS, vol. 44, no. 11, 1st June 1984, pages 1062-1064, American Institute of Physics, New York, US; H.L. STÖRMER et al.: "Modulation-doped field-effect transistor based on a two-dimensional hole gas" | [AD] - PHYSICAL REVIEW B, CONDENSED MATTER, vol. 31, no. 12, 15th June 1985, pages 8298-8301, The American Physical Society, New York, US; J.-Y. MARZIN et al.: "Optical investigation of a new type of valence-band configuration in InxGa1-xAs-GaAs strained superlattices" | [AP] - APPLIED PHYSICS LETTERS, vol. 49, no. 8, 25th August 1986, pages 461-463, American Institute of Physics, Woodbury, New York, US; T.J. DRUMMOND et al.: "p-channel, strained quantum well, field-effect transistor" |