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EP0254589
European procedure
Extract from the Register of European Patents
EP About this file: EP0254589
| EP0254589 - Process for preparation of semiconductor device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 20.08.1992 Database last updated on 19.10.2024 | Most recent event Tooltip | 20.08.1992 | No opposition filed within time limit | published on 07.10.1992 [1992/41] | Applicant(s) | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | [N/P] |
| Former [1988/04] | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 / JP | Inventor(s) | 01 /
Takasaki, Kanetake 26-10-703, Omori Kita 1-chome Ota-ku Tokyo 143 / JP | [1988/04] | Representative(s) | Lawrence, Peter Robin Broughton, et al Gill Jennings & Every LLP Broadgate House 7 Eldon Street London EC2M 7LH / GB | [N/P] |
| Former [1988/04] | Lawrence, Peter Robin Broughton, et al GILL JENNINGS & EVERY, Broadgate House, 7 Eldon Street London EC2M 7LH / GB | Application number, filing date | 87306571.8 | 24.07.1987 | [1988/04] | Priority number, date | JP19860173590 | 25.07.1986 Original published format: JP 17359086 | [1988/04] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0254589 | Date: | 27.01.1988 | Language: | EN | [1988/04] | Type: | A3 Search report | No.: | EP0254589 | Date: | 15.03.1989 | Language: | EN | [1989/11] | Type: | B1 Patent specification | No.: | EP0254589 | Date: | 16.10.1991 | Language: | EN | [1991/42] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 24.01.1989 | Classification | IPC: | H01L31/18, H01L31/02, H01L21/205 | [1988/04] | CPC: |
C23C16/5096 (EP,US);
H01L21/205 (KR);
C23C16/24 (EP,US);
H01L21/02422 (EP,US);
H01L21/02532 (EP,US);
H01L21/0262 (EP,US);
H01L31/18 (KR);
H01L31/202 (EP,US);
Y02E10/50 (EP,US);
Y02P70/50 (EP,US)
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| Designated contracting states | DE, FR, GB [1988/04] | Title | German: | Herstellungsverfahren einer Halbleitervorrichtung | [1988/04] | English: | Process for preparation of semiconductor device | [1988/04] | French: | Procédé pour la fabrication d'un dispositif semi-conducteur | [1988/04] | File destroyed: | 03.03.2001 | Examination procedure | 31.08.1989 | Examination requested [1989/44] | 12.12.1990 | Despatch of communication of intention to grant (Approval: Yes) | 16.04.1991 | Communication of intention to grant the patent | 28.06.1991 | Fee for grant paid | 28.06.1991 | Fee for publishing/printing paid | Opposition(s) | 17.07.1992 | No opposition filed within time limit [1992/41] | Fees paid | Renewal fee | 10.07.1989 | Renewal fee patent year 03 | 17.07.1990 | Renewal fee patent year 04 | 13.07.1991 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP59119876 ; | [X]EP0058543 (ENERGY CONVERSION DEVICES INC [US]); | [A]EP0016521 (FUJITSU LTD [JP]); | [A]EP0139409 (ENERGY CONVERSION DEVICES INC [US]); | [XP]EP0215289 (SIEMENS AG [DE]); | [A]US4406765 (HIGASHI AKIO [JP], et al) | [Y] - ELECTRONICS LETTERS, vol. 18, no. 5, 4th March 1982, pages 211-213, London, GB; G.J.SMITH et al.: "Large-area low-frequency discharge-produced a-Si : H" | [A] - PATENT ABSTRACTS OF JAPAN, vol. 8, no. 239 (E-276)[1676], 2nd November 1984; & JP-A-59 119 876 (SUWA SEIKOSHA K.K.) 11-07-1984, & JP59119876 A 00000000 |