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Extract from the Register of European Patents

EP About this file: EP0242292

EP0242292 - Frequency-doubling voltage-controlled oscillator [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  12.01.1991
Database last updated on 03.01.2025
Most recent event   Tooltip12.01.1991No opposition filed within time limitpublished on 06.03.1991 [1991/10]
Applicant(s)For all designated states
THOMSON-CSF
173, Boulevard Haussmann
F-75008 Paris / FR
[1987/43]
Inventor(s)01 / Mamodaly, Narguise
THOMSON-CSF SCPI 19, avenue de Messine
F-75008 Paris / FR
02 / Kaminsky, Didier
THOMSON-CSF SCPI 19, avenue de Messine
F-75008 Paris / FR
[1987/43]
Representative(s)Taboureau, James, et al
THOMSON-CSF, SCPI, B.P. 329, 50, rue Jean-Pierre Timbaud
92402 Courbevoie Cédex / FR
[N/P]
Former [1987/43]Taboureau, James, et al
THOMSON-CSF, SCPI, B.P. 329, 50, rue Jean-Pierre Timbaud
F-92402 Courbevoie Cédex / FR
Application number, filing date87400846.914.04.1987
[1987/43]
Priority number, dateFR1986000565118.04.1986         Original published format: FR 8605651
[1987/43]
Filing languageFR
Procedural languageFR
PublicationType: A1 Application with search report 
No.:EP0242292
Date:21.10.1987
Language:FR
[1987/43]
Type: B1 Patent specification 
No.:EP0242292
Date:21.03.1990
Language:FR
[1990/12]
Search report(s)(Supplementary) European search report - dispatched on:EP13.08.1987
ClassificationIPC:H03C3/22, H03B5/12
[1987/43]
CPC:
H03C3/225 (EP,US); H03B5/1218 (EP,US); H03B5/1228 (EP,US);
H03B5/1243 (EP,US); H03B5/1296 (EP,US); H03B19/00 (EP,US);
H03B19/14 (EP,US); H03B2200/004 (EP,US); H03B2200/0088 (EP,US);
H03B2200/0098 (EP,US); H03B2201/0208 (EP,US); H03B2202/027 (EP,US);
H03B5/1876 (EP,US) (-)
Designated contracting statesDE,   GB,   NL,   SE [1987/43]
TitleGerman:Spannungsgesteuerter Oszillator-Frequenverdoppler[1987/43]
English:Frequency-doubling voltage-controlled oscillator[1987/43]
French:Oscillateur commandé par une tension, doubleur de fréquence[1987/43]
File destroyed:03.03.2001
Examination procedure04.11.1987Examination requested  [1988/01]
07.08.1989Despatch of communication of intention to grant (Approval: Yes)
20.09.1989Communication of intention to grant the patent
10.11.1989Fee for grant paid
10.11.1989Fee for publishing/printing paid
Opposition(s)22.12.1990No opposition filed within time limit [1991/10]
Fees paidRenewal fee
15.03.1989Renewal fee patent year 03
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Documents cited:Search[A]DE1303540  ;
 [A]EP0017899  (SIEMENS AG [DE]);
 [A]EP0085241  (TEXAS INSTRUMENTS INC [US])
 [A]  - NEW ELECTRONICS, vol. 15, no. 24, 14 décembre 1982, page 19, Harpenden, Herts, GB; I. MARCH: "A wide range v.c.o."
 [A]  - 1980 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, février 1980, pages 118,119, IEEE, New York, US; R. VAN TUYL: "A monolithic GaAs FET RF signal generation chip"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.