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EP0247942
European procedure
Extract from the Register of European Patents
EP About this file: EP0247942
| EP0247942 - Semiconductor image sensor and a method for fabricating same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 03.12.1994 Database last updated on 02.11.2024 | Most recent event Tooltip | 03.12.1994 | No opposition filed within time limit | published on 25.01.1995 [1995/04] | Applicant(s) | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | [N/P] |
| Former [1987/49] | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 / JP | Inventor(s) | 01 /
Takei, Akira 5-401, 150-4, Hitorizawacho Isogo-ku Yokohama-shi Kanagawa 235 / JP | 02 /
Nishikawa, Tetsuo Dai-7-Nakahararyo, 528 Shimokodanaka Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | [1987/49] | Representative(s) | Joly, Jean-Jacques, et al Cabinet Beau de Loménie 158, rue de l'Université 75340 Paris cedex 07 / FR | [N/P] |
| Former [1987/49] | Joly, Jean-Jacques, et al Cabinet Beau de Loménie 158, rue de l'Université F-75340 Paris Cédex 07 / FR | Application number, filing date | 87401187.7 | 26.05.1987 | [1987/49] | Priority number, date | JP19860119347 | 26.05.1986 Original published format: JP 11934786 | [1987/49] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0247942 | Date: | 02.12.1987 | Language: | EN | [1987/49] | Type: | A3 Search report | No.: | EP0247942 | Date: | 26.09.1990 | Language: | EN | [1990/39] | Type: | B1 Patent specification | No.: | EP0247942 | Date: | 02.02.1994 | Language: | EN | [1994/05] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 06.08.1990 | Classification | IPC: | H01L27/14, H01L21/82 | [1987/49] | CPC: |
H01L27/14831 (EP,US);
H01L27/148 (KR)
| Designated contracting states | DE, FR, GB [1987/49] | Title | German: | Halbleiterbildsensor und Herstellungsverfahren dafür | [1994/05] | English: | Semiconductor image sensor and a method for fabricating same | [1987/49] | French: | Capteur d'images semi-conducteur et son procédé de fabrication | [1987/49] |
| Former [1987/49] | Halbleiterbildsensor und Herstellungsverfahren dafÜr | File destroyed: | 03.03.2001 | Examination procedure | 17.12.1990 | Examination requested [1991/07] | 22.05.1992 | Despatch of a communication from the examining division (Time limit: M04) | 21.09.1992 | Reply to a communication from the examining division | 04.03.1993 | Despatch of communication of intention to grant (Approval: No) | 16.07.1993 | Despatch of communication of intention to grant (Approval: later approval) | 28.07.1993 | Communication of intention to grant the patent | 02.10.1993 | Fee for grant paid | 02.10.1993 | Fee for publishing/printing paid | Opposition(s) | 03.11.1994 | No opposition filed within time limit [1995/04] | Fees paid | Renewal fee | 23.05.1989 | Renewal fee patent year 03 | 25.05.1990 | Renewal fee patent year 04 | 27.05.1991 | Renewal fee patent year 05 | 21.05.1992 | Renewal fee patent year 06 | 21.05.1993 | Renewal fee patent year 07 |
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