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EP0263788
European procedure
Extract from the Register of European Patents
EP About this file: EP0263788
| EP0263788 - Process and apparatus for depositing hydrogenated amorphous silicon on a substrate in a plasma environment [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 02.07.1992 Database last updated on 31.08.2024 | Most recent event Tooltip | 23.11.2007 | Lapse of the patent in a contracting state New state(s): ES | published on 26.12.2007 [2007/52] | Applicant(s) | For all designated states INSTITUT DE MICROTECHNIQUE Université de Neuchâtel 2, rue Bréguet CH-2000 Neuchâtel / CH | [1988/15] | Inventor(s) | 01 /
Curtins, Hermann Giessen 165 CH-3236 Gampelen / CH | [1988/15] | Representative(s) | Nithardt, Roland Cabinet Moser & Cie C/o Cabinet Roland Nithardt Y-Parc/Chemin de la Sallaz 1400 Yverdon-les-Bains / CH | [N/P] |
| Former [1988/15] | Nithardt, Roland Cabinet Moser & Cie, c/o Cabinet Roland Nithardt, Y-Parc/Chemin de la Sallaz CH-1400 Yverdon-les-Bains / CH | Application number, filing date | 87810548.5 | 23.09.1987 | [1988/15] | Priority number, date | CH19860003868 | 26.09.1986 Original published format: CH 386886 | [1988/15] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP0263788 | Date: | 13.04.1988 | Language: | FR | [1988/15] | Type: | B1 Patent specification | No.: | EP0263788 | Date: | 28.08.1991 | Language: | FR | [1991/35] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 16.02.1988 | Classification | IPC: | C23C16/50, C23C16/22 | [1988/15] | CPC: |
C23C16/5096 (EP,US);
C23C16/22 (EP,US)
| Designated contracting states | AT, BE, CH, DE, ES, FR, GB, GR, IT, LI, LU, NL, SE [1988/15] | Title | German: | Verfahren und Vorrichtung zum Auftragen von hydriertem, amorphem Silizium auf ein Substrat in Plasmaumgebung | [1988/15] | English: | Process and apparatus for depositing hydrogenated amorphous silicon on a substrate in a plasma environment | [1988/15] | French: | Procédé et installation de dépôt de silicium amorphe hydrogène sur un substrat dans une enceinte à plasma | [1988/15] | Examination procedure | 30.09.1988 | Examination requested [1988/48] | 06.12.1990 | Despatch of communication of intention to grant (Approval: Yes) | 12.02.1991 | Communication of intention to grant the patent | 23.04.1991 | Fee for grant paid | 23.04.1991 | Fee for publishing/printing paid | Opposition(s) | 30.05.1992 | No opposition filed within time limit [1992/34] | Fees paid | Renewal fee | 29.09.1989 | Renewal fee patent year 03 | 28.09.1990 | Renewal fee patent year 04 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | AT | 28.08.1991 | GB | 28.08.1991 | GR | 28.08.1991 | IT | 28.08.1991 | NL | 28.08.1991 | SE | 28.08.1991 | LU | 30.09.1991 | ES | 09.12.1991 | [2004/03] |
| Former [2000/04] | AT | 28.08.1991 | |
| GB | 28.08.1991 | ||
| GR | 28.08.1991 | ||
| IT | 28.08.1991 | ||
| NL | 28.08.1991 | ||
| SE | 28.08.1991 | ||
| LU | 30.09.1991 | ||
| Former [1999/52] | AT | 28.08.1991 | |
| GB | 28.08.1991 | ||
| IT | 28.08.1991 | ||
| NL | 28.08.1991 | ||
| SE | 28.08.1991 | ||
| LU | 30.09.1991 | ||
| Former [1999/42] | AT | 28.08.1991 | |
| GB | 28.08.1991 | ||
| IT | 28.08.1991 | ||
| NL | 28.08.1991 | ||
| SE | 28.08.1991 | ||
| Former [1992/34] | AT | 28.08.1991 | |
| GB | 28.08.1991 | ||
| NL | 28.08.1991 | ||
| SE | 28.08.1991 | ||
| Former [1992/15] | AT | 28.08.1991 | |
| NL | 28.08.1991 | ||
| SE | 28.08.1991 | ||
| Former [1992/13] | SE | 28.08.1991 | Documents cited: | Search | [A]US4226898 (OVSHINSKY STANFORD R [US], et al); | [A]US4406765 (HIGASHI AKIO [JP], et al) |