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EP0293641
European procedure
Extract from the Register of European Patents
EP About this file: EP0293641
| EP0293641 - Process for the manufacture of a full self-aligned bipolar transistor [Right-click to bookmark this link] | |||
| Former [1988/49] | Full self-aligned bipolar transistor and process for making the same | ||
| [1990/52] | Status | No opposition filed within time limit Status updated on 31.10.1991 Database last updated on 17.07.2024 | Most recent event Tooltip | 31.10.1991 | No opposition filed within time limit | published on 18.12.1991 [1991/51] | Applicant(s) | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
| Former [1988/49] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 D-80333 München / DE | Inventor(s) | 01 /
Schaber, Hans-Christian, Dipl.-Phys.-Dr. Ruffiniallee 26 D-8032 Gräfelfing / DE | 02 /
Meul, Hans-Willi, Dipl.-Phys.-Dr. Watzmannstrasse 10a D-8019 Steinhöring / DE | [1988/49] | Application number, filing date | 88107441.3 | 09.05.1988 | [1988/49] | Priority number, date | DE19873717153 | 21.05.1987 Original published format: DE 3717153 | [1988/49] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP0293641 | Date: | 07.12.1988 | Language: | DE | [1988/49] | Type: | B1 Patent specification | No.: | EP0293641 | Date: | 27.12.1990 | Language: | DE | [1990/52] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 12.10.1988 | Classification | IPC: | H01L21/331, H01L29/73 | [1990/52] | CPC: |
H01L21/8222 (EP,US);
H01L29/7325 (EP,US);
Y10S148/01 (EP,US);
Y10S148/011 (EP,US);
Y10S148/017 (EP,US)
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| Former IPC [1988/49] | H01L29/72 | Designated contracting states | AT, DE, FR, GB, IT [1988/49] | Title | German: | Verfahren zur Herstellung eines voll selbstjustierten Bipolartransistors | [1990/52] | English: | Process for the manufacture of a full self-aligned bipolar transistor | [1990/52] | French: | Procédé de fabrication à un transistor bipolaire entièrement auto-aligné | [1990/52] |
| Former [1988/49] | Voll selbstjustierter Bipolartransistor und Verfahren zu seiner Herstellung | ||
| Former [1988/49] | Full self-aligned bipolar transistor and process for making the same | ||
| Former [1988/49] | Transistor bipolaire entièrement auto-aligné et procédé pour sa fabrication | Examination procedure | 09.01.1989 | Examination requested [1989/10] | 23.05.1990 | Despatch of communication of intention to grant (Approval: Yes) | 22.06.1990 | Communication of intention to grant the patent | 10.07.1990 | Fee for grant paid | 10.07.1990 | Fee for publishing/printing paid | Opposition(s) | 28.09.1991 | No opposition filed within time limit [1991/51] | Fees paid | Renewal fee | 28.05.1990 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | EP0029900 [ ] (IBM [US]); | EP0039411 [ ] (IBM [US]); | EP0036499 [ ]; | UST104803I [ ] |