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EP0310087
European procedure
Extract from the Register of European Patents
EP About this file: EP0310087
| EP0310087 - Semiconductor device having bipolar transistor with trench [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 23.03.1995 Database last updated on 02.09.2024 | Most recent event Tooltip | 23.03.1995 | No opposition filed within time limit | published on 10.05.1995 [1995/19] | Applicant(s) | For all designated states NEC Corporation 7-1, Shiba 5-chome Minato-ku Tokyo 108-8001 / JP | [N/P] |
| Former [1989/14] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP | Inventor(s) | 01 /
Ohi, Susumu c/o NEC Corporation 33-1, Shiba 5-chome Minato-ku Tokyo / JP | 02 /
Nakamae, Masahiko c/o NEC Corporation 33-1, Shiba 5-chome Minato-ku Tokyo / JP | 03 /
Shiba, Hiroshi c/o NEC Corporation 33-1, Shiba 5-chome Minato-ku Tokyo / JP | [1989/14] | Representative(s) | Glawe, Delfs, Moll Partnerschaft mbB von Patent- und Rechtsanwälten Postfach 26 01 62 80058 München / DE | [N/P] |
| Former [1989/14] | Glawe, Delfs, Moll & Partner Patentanwälte Postfach 26 01 62 D-80058 München / DE | Application number, filing date | 88116120.2 | 29.09.1988 | [1989/14] | Priority number, date | JP19870247175 | 29.09.1987 Original published format: JP 24717587 | [1989/14] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0310087 | Date: | 05.04.1989 | Language: | EN | [1989/14] | Type: | A3 Search report | No.: | EP0310087 | Date: | 13.12.1989 | Language: | EN | [1989/50] | Type: | B1 Patent specification | No.: | EP0310087 | Date: | 18.05.1994 | Language: | EN | [1994/20] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 24.10.1989 | Classification | IPC: | H01L29/06, H01L29/73 | [1994/20] | CPC: |
H01L29/66272 (EP,US);
H01L21/743 (EP,US);
H01L29/41708 (EP,US);
H01L29/42304 (EP,US)
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| Former IPC [1989/14] | H01L29/06, H01L29/72 | Designated contracting states | DE, FR, GB [1989/14] | Title | German: | Halbleiteranordnung mit einem Trench-Bipolartransistor | [1989/14] | English: | Semiconductor device having bipolar transistor with trench | [1989/14] | French: | Dispositif semi-conducteur ayant un transistor bipolaire avec rainure | [1989/14] | Examination procedure | 29.09.1988 | Examination requested [1989/14] | 12.10.1992 | Despatch of a communication from the examining division (Time limit: M06) | 21.04.1993 | Reply to a communication from the examining division | 09.07.1993 | Despatch of communication of intention to grant (Approval: Yes) | 22.11.1993 | Communication of intention to grant the patent | 18.02.1994 | Fee for grant paid | 18.02.1994 | Fee for publishing/printing paid | Opposition(s) | 21.02.1995 | No opposition filed within time limit [1995/19] | Fees paid | Renewal fee | 19.09.1990 | Renewal fee patent year 03 | 18.09.1991 | Renewal fee patent year 04 | 22.09.1992 | Renewal fee patent year 05 | 21.09.1993 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP60241261 ; | [A]JP61127169 ; | [A]WO8503597 (ADVANCED MICRO DEVICES INC [US]); | [A]DE2621165 (ITT IND GMBH DEUTSCHE) | [A] - PATENT ABSTRACTS OF JAPAN, vol. 10, no. 99 (E-396) (2156) 16th April 1986; & JP-A-60 241 261 (HITACHI SEISAKUSHO K.K.) 30-11-1985, & JP60241261 A 00000000 | [A] - PATENT ABSTRACTS OF JAPAN, vol. 10, no. 317 (E-449) (2373) 28th October 1986; & JP-A-61 127 169 (SONY CORP.) 14-06-1986, & JP61127169 A 00000000 |