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EP0294865
European procedure
Extract from the Register of European Patents
EP About this file: EP0294865
| EP0294865 - ROM memory programming procedure using MOS technology with thin gate oxide and junctions [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 14.09.2016 Database last updated on 09.05.2025 | Most recent event Tooltip | 14.09.2016 | No opposition filed within time limit | Applicant(s) | For all designated states STMicroelectronics Srl Via C. Olivetti, 2 20041 Agrate Brianza (Milano) / IT | [N/P] |
| Former [1989/46] | For all designated states SGS-THOMSON MICROELECTRONICS S.r.l. Via C. Olivetti, 2 I-20041 Agrate Brianza (Milano) / IT | ||
| Former [1988/50] | For all designated states SGS-THOMSON MICROELECTRONICS S.p.A. Stradale Primosole 50 I-95121 Catania (CT) / IT | Inventor(s) | 01 /
Galbiati, Sergio Via C. Terni 39 I-24047 Treviglio (Bergamo) / IT | 02 /
Comi, Alessandro Via G. Rossini 6 I-20044 Bernareggio (Milano) / IT | [1988/50] | Representative(s) | Mittler, Enrico, et al Mittler & C. S.r.l. Viale Lombardia, 20 20131 Milano / IT | [N/P] |
| Former [1988/50] | Mittler, Enrico, et al c/o Marchi & Mittler s.r.l. Viale Lombardia, 20 I-20131 Milano / IT | Application number, filing date | 88201013.5 | 20.05.1988 | [1988/50] | Priority number, date | IT19870020872 | 11.06.1987 Original published format: IT 2087287 | [1988/50] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0294865 | Date: | 14.12.1988 | Language: | EN | [1988/50] | Type: | B1 Patent specification | No.: | EP0294865 | Date: | 12.05.1993 | Language: | EN | [1993/19] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 19.09.1988 | Classification | IPC: | H01L27/10, G11C17/00 | [1988/50] | CPC: |
G11C17/12 (EP,US);
H10B20/00 (EP,US)
| Designated contracting states | DE, FR, GB, NL, SE [1988/50] | Title | German: | Programmierverfahren für ROM-Speicher unter Verwendung der MOS-Technologie mit dünnen Gateoxid und mit Übergängen | [1988/50] | English: | ROM memory programming procedure using MOS technology with thin gate oxide and junctions | [1988/50] | French: | Procédé de programmation de mémoires ROM utilisant une technologie de type MOS à oxyde de grille mince et à jonctions | [1988/50] | Examination procedure | 04.05.1989 | Examination requested [1989/29] | 06.09.1991 | Despatch of a communication from the examining division (Time limit: M04) | 18.12.1991 | Reply to a communication from the examining division | 15.07.1992 | Despatch of communication of intention to grant (Approval: Yes) | 13.11.1992 | Communication of intention to grant the patent | 19.01.1993 | Fee for grant paid | 19.01.1993 | Fee for publishing/printing paid | Opposition(s) | 15.02.1994 | No opposition filed within time limit [ N /P ] | Fees paid | Renewal fee | 26.04.1990 | Renewal fee patent year 03 | 20.05.1991 | Renewal fee patent year 04 | 24.04.1992 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US4356042 (GEDALY JERRELL M, et al); | [A]US4385432 (KUO CHANG-KIANG, et al); | [A]US4564854 (OGURA MITSUGI [JP]) |