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EP0281276
European procedure
Extract from the Register of European Patents
EP About this file: EP0281276
| EP0281276 - Fabrication of polycrystalline silicon resistors [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 27.08.1994 Database last updated on 13.11.2024 | Most recent event Tooltip | 20.11.2009 | Change - representative | published on 23.12.2009 [2009/52] | Applicant(s) | For all designated states FAIRCHILD SEMICONDUCTOR CORPORATION 10400 Ridgeview Court P.O. Box 1500 Cupertino, California 95014 / US | [N/P] |
| Former [1989/35] | For all designated states FAIRCHILD SEMICONDUCTOR CORPORATION 10400 Ridgeview Court P.O. Box 1500 Cupertino, California 95014 / US | ||
| Former [1988/36] | For all designated states FAIRCHILD SEMICONDUCTOR CORPORATION 10400 Ridgeview Court P.O. Box 1500 Cupertino California 95014 / US | Inventor(s) | 01 /
Kapoor, Ashok K. 1056 Amarillo Avenue Palo Alto California 94303 / US | [1993/43] |
| Former [1988/36] | 01 /
Kapoor, Ashok . 1056 Amarillo Avenue Palo Alto California 94303 / US | Representative(s) | Jones, Ian W.P. Thompson & Co. Celcon House 289-293 High Holborn London WC1V 7HU / GB | [2009/52] |
| Former [1994/35] | Jones, Ian W.P. THOMPSON & CO. Celcon House 289-293 High Holborn London WC1V 7HU / GB | ||
| Former [1988/36] | Jones, Ian W.P. THOMPSON & CO. Celcon House 289-293 High Holborn London WC1V 7HU / GB | Application number, filing date | 88301351.8 | 18.02.1988 | [1988/36] | Priority number, date | US19870017388 | 20.02.1987 Original published format: US 17388 | [1988/36] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0281276 | Date: | 07.09.1988 | Language: | EN | [1988/36] | Type: | B1 Patent specification | No.: | EP0281276 | Date: | 27.10.1993 | Language: | EN | [1993/43] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 18.07.1988 | Classification | IPC: | H01L21/31 | [1988/36] | CPC: |
H01L28/20 (EP,US);
H01C17/00 (KR);
H01L21/32155 (EP,US);
H01L27/04 (KR);
Y10S148/136 (EP,US);
Y10S438/934 (EP,US)
| Designated contracting states | DE, FR, GB, IT, NL [1988/36] | Title | German: | Herstellung von Widerständen aus polykristallinem Silizium | [1988/36] | English: | Fabrication of polycrystalline silicon resistors | [1988/36] | French: | Fabrication de résistances en silicium polycristallin | [1988/36] | Examination procedure | 03.10.1988 | Examination requested [1988/48] | 29.11.1990 | Despatch of a communication from the examining division (Time limit: M06) | 28.05.1991 | Reply to a communication from the examining division | 06.09.1991 | Despatch of a communication from the examining division (Time limit: M06) | 10.03.1992 | Reply to a communication from the examining division | 11.12.1992 | Despatch of communication of intention to grant (Approval: No) | 22.04.1993 | Despatch of communication of intention to grant (Approval: later approval) | 28.04.1993 | Communication of intention to grant the patent | 22.06.1993 | Fee for grant paid | 22.06.1993 | Fee for publishing/printing paid | Opposition(s) | 28.07.1994 | No opposition filed within time limit [1994/42] | Fees paid | Renewal fee | 04.01.1990 | Renewal fee patent year 03 | 20.12.1990 | Renewal fee patent year 04 | 30.12.1991 | Renewal fee patent year 05 | 16.12.1992 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]JP59048952 ; | [X]JP60127755 ; | [X]US4579600 (SHAH RAJIV [US], et al); | [A]US4411708 (WINHAN LUCIEN C [US]) | [X] - PATENT ABSTRACTS OF JAPAN, vol. 8, no. 139 (E-253)[1576], 28th June 1984; & JP-A-59 048 952 (SONY K.K.) 21-03-1984, & JP59048952 A 00000000 | [X] - PATENT ABSTRACTS OF JAPAN, vol. 9, no. 284 (E-357)[2007], 12th November 1985; & JP-A-60 127 755 (SONY K.K.) 08-07-1985, & JP60127755 A 00000000 | [A] - JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 133, no. 4, April 1986, pages 847-849, Manchester, NH, US; C.Y. LU et al.: "The influence of isothermal hydrogen annealing on electrical properties of polycrystalline-silicon films" |