-
EP0283278
European procedure
Extract from the Register of European Patents
EP About this file: EP0283278
| EP0283278 - Compound semiconductor device having nonalloyed ohmic contacts [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 23.04.1994 Database last updated on 11.04.2026 | Most recent event Tooltip | 23.04.1994 | No opposition filed within time limit | published on 15.06.1994 [1994/24] | Applicant(s) | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | [N/P] |
| Former [1988/38] | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 / JP | Inventor(s) | 01 /
Kuroda, Shigeru 4-5-9-903, Sagamioono Sagamihara-shi Kanagawa 228 / JP | 02 /
Mimura, Takashi 1-10-42, Higashitamagawagakuen Machida-shi Tokyo 194 / JP | 03 /
Notomi, Seishi 67-2, Shimotsuruma Yamato-shi Kanagawa, 242 / JP | [1988/38] | Representative(s) | Billington, Lawrence Emlyn, et al Haseltine Lake LLP Lincoln House, 5th Floor 300 High Holborn London WC1V 7JH / GB | [N/P] |
| Former [1988/38] | Billington, Lawrence Emlyn, et al HASELTINE LAKE & CO Hazlitt House 28 Southampton Buildings Chancery Lane London WC2A 1AT / GB | Application number, filing date | 88302314.5 | 17.03.1988 | [1988/38] | Priority number, date | JP19870061097 | 18.03.1987 Original published format: JP 6109787 | [1988/38] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0283278 | Date: | 21.09.1988 | Language: | EN | [1988/38] | Type: | A3 Search report | No.: | EP0283278 | Date: | 06.09.1989 | Language: | EN | [1989/36] | Type: | B1 Patent specification | No.: | EP0283278 | Date: | 23.06.1993 | Language: | EN | [1993/25] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 20.07.1989 | Classification | IPC: | H01L29/54 | [1988/38] | CPC: |
H10D30/4755 (EP,US);
H10D84/00 (KR);
H10D62/85 (EP,KR,US);
H10D30/67 (KR);
H10D64/62 (EP,US)
| Designated contracting states | DE, FR, GB [1988/38] | Title | German: | Zusammengesetzte Halbleiteranordnung mit nicht-legierten ohmschen Kontakten | [1988/38] | English: | Compound semiconductor device having nonalloyed ohmic contacts | [1988/38] | French: | Composé semi-conducteur à contacts ohmiques sans alliage | [1988/38] | Examination procedure | 21.02.1990 | Examination requested [1990/17] | 27.12.1991 | Despatch of a communication from the examining division (Time limit: M06) | 06.07.1992 | Reply to a communication from the examining division | 03.11.1992 | Despatch of communication of intention to grant (Approval: Yes) | 15.12.1992 | Communication of intention to grant the patent | 11.03.1993 | Fee for grant paid | 11.03.1993 | Fee for publishing/printing paid | Opposition(s) | 24.03.1994 | No opposition filed within time limit [1994/24] | Fees paid | Renewal fee | 12.03.1990 | Renewal fee patent year 03 | 12.03.1991 | Renewal fee patent year 04 | 10.03.1992 | Renewal fee patent year 05 | 11.03.1993 | Renewal fee patent year 06 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y] ELECTRONIC LETTERS, vol. 20, no. 15, July 1984, pages 615-618, Stevenage, Herts, GB; H. DMBKES et al.: "Optimisation of modulation-doped heterostructures for TEGFET operation at room temperature" | [Y] IEEE ELECTRON DEVICE LETTERS, vol. EDL-8, no. 1, January 1987, pages 24-26, IEEE, New York, US; C.K. PENG et al.: "Microwave performance of InA1As/InGaAs/InP MODFET's" [Y] | [A] ELECTRONICS LETTERS, vol. 17, no. 6, 19th March 1981, pages 215-216, London, GB; T. ISHIBASHI: "InP MESFET with In0.53Ga0.47As/InP heterostructure contacts" [A] | Examination | Gallium Arsenide, Ed. Howles & Morgan, 1985, pp. 202-203, Publ. John Wiley & Sons. |