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EP0288224
European procedure
Extract from the Register of European Patents
EP About this file: EP0288224
| EP0288224 - Semiconductor laser devices [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 14.08.1993 Database last updated on 24.08.2024 | Most recent event Tooltip | 14.08.1993 | No opposition filed within time limit | published on 06.10.1993 [1993/40] | Applicant(s) | For all designated states Sony Corporation 7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 / JP | [N/P] |
| Former [1988/43] | For all designated states SONY CORPORATION 7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 / JP | Inventor(s) | 01 /
Hirata, Shoji c/o Patents Division Sony Corporation 6-7-35 Kitashinagawa Shinagawa-ku Tokyo 141 / JP | [1988/43] | Representative(s) | Thomas, Christopher Hugo, et al D. Young & Co, 21 New Fetter Lane London EC4A 1DA / GB | [1988/43] | Application number, filing date | 88303426.6 | 15.04.1988 | [1988/43] | Priority number, date | JP19870100763 | 23.04.1987 Original published format: JP 10076387 | [1988/43] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0288224 | Date: | 26.10.1988 | Language: | EN | [1988/43] | Type: | A3 Search report | No.: | EP0288224 | Date: | 30.05.1990 | Language: | EN | [1990/22] | Type: | B1 Patent specification | No.: | EP0288224 | Date: | 14.10.1992 | Language: | EN | [1992/42] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 11.04.1990 | Classification | IPC: | H01S3/06, H01S3/19 | [1988/43] | CPC: |
H01S5/22 (EP,US);
H01S5/32 (KR);
H01S5/12 (EP,KR,US);
H01S5/2231 (EP,US);
H01S5/32316 (EP,US)
| Designated contracting states | DE, FR, GB, NL [1988/43] | Title | German: | Halbleiterlaser-Vorrichtung | [1988/43] | English: | Semiconductor laser devices | [1988/43] | French: | Dispositif laser à semi-conducteur | [1988/43] | File destroyed: | 20.04.2002 | Examination procedure | 26.09.1990 | Examination requested [1990/47] | 27.12.1991 | Despatch of communication of intention to grant (Approval: Yes) | 09.04.1992 | Communication of intention to grant the patent | 30.05.1992 | Fee for grant paid | 30.05.1992 | Fee for publishing/printing paid | Opposition(s) | 15.07.1993 | No opposition filed within time limit [1993/40] | Fees paid | Renewal fee | 10.04.1990 | Renewal fee patent year 03 | 21.12.1990 | Renewal fee patent year 04 | 04.04.1992 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP59080984 ; | [A]JP60164383 ; | [A]EP0114109 (TOKYO SHIBAURA ELECTRIC CO [JP]) | [A] - PATENT ABSTRACTS OF JAPAN, vol. 8, no. 194 (E-264)[1631], 6th September 1984; & JP-A-59 080 984 (HITACHI SEISAKUSHO K.K.), & JP59080984 A 00000000 | [A] - ELECTRONICS LETTERS, vol. 22, no. 19, September 1986, pages 1023-1024, Stevenage, Herts, GB; S. HIRATA et al.: "Low-threshold AlGaAs/GaAs distributed feedback lasers fabricated by MOCVD" | [A] - PATENT ABSTRACTS OF JAPAN, vol. 9, no. 332 (E-370)[2055], 26th September 1985; & JP-A-60 164 383 (NIPPON DENKI K.K.), & JP60164383 A 00000000 |