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EP0295782
European procedure
Extract from the Register of European Patents
EP About this file: EP0295782
| EP0295782 - In-circuit transistor beta test and method [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 17.02.1994 Database last updated on 25.09.2024 | Most recent event Tooltip | 15.08.2008 | Change - applicant | published on 17.09.2008 [2008/38] | Applicant(s) | For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto, CA 94304-1112 / US | [N/P] |
| Former [2008/38] | For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto CA 94304-1112 / US | ||
| Former [1991/02] | For all designated states Hewlett-Packard Company Mail Stop 20 B-O, 3000 Hanover Street Palo Alto, California 94304 / US | ||
| Former [1990/11] | For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto California 94304 / US | ||
| Former [1988/51] | For all designated states HEWLETT PACKARD COMPANY Legal Department 3000 Hanover Street Palo Alto, CA 94304 / US | Inventor(s) | 01 /
Peiffer, Ronald J. 512 Parkway Court Fort Collins Colorado 80525 / US | 02 /
Crook, David T. 2331 Abeyta Court Loveland Colorado 80538 / US | [1988/51] | Representative(s) | Colgan, Stephen James, et al CARPMAELS & RANSFORD 43 Bloomsbury Square London WC1A 2RA / GB | [N/P] |
| Former [1988/51] | Colgan, Stephen James, et al CARPMAELS & RANSFORD 43 Bloomsbury Square London WC1A 2RA / GB | Application number, filing date | 88304253.3 | 11.05.1988 | [1988/51] | Priority number, date | US19870064157 | 18.06.1987 Original published format: US 64157 | [1988/51] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0295782 | Date: | 21.12.1988 | Language: | EN | [1988/51] | Type: | B1 Patent specification | No.: | EP0295782 | Date: | 14.04.1993 | Language: | EN | [1993/15] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 13.10.1988 | Classification | IPC: | G01R31/26 | [1988/51] | CPC: |
G01R31/2614 (EP,US);
G01R31/28 (KR)
| Designated contracting states | DE, FR, GB [1988/51] | Title | German: | Betatest für einen Transistor in einer Schaltung und Verfahren | [1988/51] | English: | In-circuit transistor beta test and method | [1988/51] | French: | Test du bêta d'un transistor sur circuit et procédé | [1988/51] | Examination procedure | 24.02.1989 | Examination requested [1989/17] | 26.09.1991 | Despatch of a communication from the examining division (Time limit: M06) | 03.04.1992 | Reply to a communication from the examining division | 09.07.1992 | Despatch of communication of intention to grant (Approval: Yes) | 16.10.1992 | Communication of intention to grant the patent | 10.12.1992 | Fee for grant paid | 10.12.1992 | Fee for publishing/printing paid | Opposition(s) | 15.01.1994 | No opposition filed within time limit [1994/14] | Fees paid | Renewal fee | 30.04.1990 | Renewal fee patent year 03 | 12.04.1991 | Renewal fee patent year 04 | 15.04.1992 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A] - E.D.N. ELECTRICAL DESIGN NEWS, vol. 28, no. 5, 3rd March 1983, pages 133-134, Boston, Massachusetts, US; D.K. HU: "Test transistor Beta in situ" | [A] - IEEE ELECTRON DEVICE LETTERS, vol. EDL-6, no. 5, May 1985, pages 219-220, IEEE, New York, US; R.C. JAEGER et al.: "Direct measurement of the available voltage gain of bipolar and field-effect transistors" |