blank Quick help
blank Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability
Register Forum

2022.02.11

More...
blank News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...
blank Related links

Extract from the Register of European Patents

EP About this file: EP0306213

EP0306213 - Submicron bipolar transistor with edge contacts [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  25.02.1991
Database last updated on 31.08.2024
Most recent event   Tooltip25.02.1991Change - withdrawalpublished on 17.04.1991 [1991/16]
Applicant(s)For all designated states
AT&T Corp.
32 Avenue of the Americas
New York, NY 10013-2412 / US
[1989/10]
Inventor(s)01 / Feygenson, Anatoly
17 Thornbury Road
Reading Pennsylvania 19606 / US
[1989/10]
Representative(s)Watts, Christopher Malcolm Kelway, et al
Lucent Technologies (UK) Ltd, 5 Mornington Road Woodford Green
Essex IG8 OTU / GB
[N/P]
Former [1989/10]Watts, Christopher Malcolm Kelway, Dr., et al
AT&T (UK) LTD. AT&T Intellectual Property Division 5 Mornington Road
Woodford Green Essex IG8 OTU / GB
Application number, filing date88307872.725.08.1988
[1989/10]
Priority number, dateUS1987009201502.09.1987         Original published format: US 92015
[1989/10]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0306213
Date:08.03.1989
Language:EN
[1989/10]
Type: A3 Search report 
No.:EP0306213
Date:30.05.1990
Language:EN
[1990/22]
Search report(s)(Supplementary) European search report - dispatched on:EP10.04.1990
ClassificationIPC:H01L29/52, H01L29/72
[1989/10]
CPC:
H01L29/41708 (EP); H01L29/66287 (EP); H01L29/70 (KR);
H01L29/7325 (EP)
Designated contracting statesDE,   ES,   FR,   GB [1989/10]
TitleGerman:Submikron-Bipolartransistor mit seitlichen Kontakten[1989/10]
English:Submicron bipolar transistor with edge contacts[1989/10]
French:Transistor bipolaire submicronique avec des contacts latéraux[1989/10]
File destroyed:02.03.1998
Examination procedure23.11.1990Examination requested  [1991/04]
29.01.1991Application withdrawn by applicant  [1991/16]
Fees paidRenewal fee
23.08.1990Renewal fee patent year 03
20.12.1990Renewal fee patent year 04
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court
See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[X]JP60117664  ;
 [Y]EP0144762  (IBM [US]);
 [Y]EP0170250  (TOSHIBA KK [JP])
 [X]  - PATENT ABSTRACTS OF JAPAN vol. 9, no. 274 (E-354)(1977), 31 October 1985; & JP - A - 60 117 664 (FUJITSU K.K.) 25.06.1985, & JP60117664 A 19851031
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.