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Extract from the Register of European Patents

EP About this file: EP0323856

EP0323856 - Substrate structure for composite semiconductor device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  09.04.1998
Database last updated on 02.11.2024
Most recent event   Tooltip09.04.1998No opposition filed within time limitpublished on 27.05.1998 [1998/22]
Applicant(s)For all designated states
Kabushiki Kaisha Toshiba
72, Horikawa-cho, Saiwai-ku Kawasaki-shi
Kanagawa-ken 210-8572 / JP
[N/P]
Former [1989/28]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP
Inventor(s)01 / Kitahara, Koichi c/o Patent Division
Kabushiki Kaisha Toshiba 1-1 Shibaura 1-chome
Minato-ku Tokyo 105 / JP
02 / Natsume, Yoshinori c/o Patent Division
Kabushiki Kaisha Toshiba 1-1 Shibaura 1-chome
Minato-ku Tokyo 105 / JP
03 / Hosoki, Yoshinori c/o Patent Division
Kabushiki Kaisha Toshiba 1-1 Shibaura 1-chome
Minato-ku Tokyo 105 / JP
[1989/28]
Representative(s)Henkel & Partner mbB
Patentanwaltskanzlei, Rechtsanwaltskanzlei
Maximiliansplatz 21
80333 München / DE
[N/P]
Former [1989/28]Henkel, Feiler, Hänzel & Partner
Möhlstrasse 37
D-81675 München / DE
Application number, filing date89100183.605.01.1989
[1989/28]
Priority number, dateJP1988000046505.01.1988         Original published format: JP 46588
[1989/28]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0323856
Date:12.07.1989
Language:EN
[1989/28]
Type: A3 Search report 
No.:EP0323856
Date:20.02.1991
Language:EN
[1991/08]
Type: B1 Patent specification 
No.:EP0323856
Date:04.06.1997
Language:EN
[1997/23]
Search report(s)(Supplementary) European search report - dispatched on:EP03.01.1991
ClassificationIPC:H01L21/76
[1989/28]
CPC:
H01L21/762 (EP,US); H01L21/30 (KR); H01L21/76264 (EP,US);
H01L21/76275 (EP,US); H01L21/76286 (EP,US)
Designated contracting statesDE,   FR,   GB,   IT [1989/28]
TitleGerman:Substratsstruktur für zusammengesetztes Halbleiterbauelement[1989/28]
English:Substrate structure for composite semiconductor device[1989/28]
French:Structure de substrat pour dispositif à semi-conducteur composite[1989/28]
Examination procedure02.02.1989Examination requested  [1989/28]
09.05.1994Despatch of a communication from the examining division (Time limit: M06)
28.09.1994Reply to a communication from the examining division
30.12.1994Despatch of a communication from the examining division (Time limit: M06)
20.06.1995Reply to a communication from the examining division
28.08.1995Despatch of a communication from the examining division (Time limit: M06)
07.03.1996Reply to a communication from the examining division
26.07.1996Despatch of communication of intention to grant (Approval: Yes)
09.12.1996Communication of intention to grant the patent
19.03.1997Fee for grant paid
19.03.1997Fee for publishing/printing paid
Opposition(s)05.03.1998No opposition filed within time limit [1998/22]
Fees paidRenewal fee
17.12.1990Renewal fee patent year 03
10.01.1992Renewal fee patent year 04
15.01.1993Renewal fee patent year 05
11.01.1994Renewal fee patent year 06
10.01.1995Renewal fee patent year 07
10.01.1996Renewal fee patent year 08
08.01.1997Renewal fee patent year 09
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Documents cited:Search[X]EP0031260  (THOMSON CSF [FR]);
 [Y]EP0156964  (MOTOROLA INC [US])
 [Y]  - PROCEEDINGS OF THE IEEE 1987 CUSTOM INTEGRATED CIRCUITS CONFERENCE. 4-7 May 1987, pages 443-446, Portland, Oregon, US; Y. OHATA et al.: "Dielectrically isolated intelligent power switch"
ExaminationEP0217288
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.