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Extract from the Register of European Patents

EP About this file: EP0334006

EP0334006 - Stacked channel heterojunction fet [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  14.01.1993
Database last updated on 24.08.2024
Most recent event   Tooltip14.01.1993Application deemed to be withdrawnpublished on 03.03.1993 [1993/09]
Applicant(s)For all designated states
SIEMENS AKTIENGESELLSCHAFT
Werner-von-Siemens-Str. 1
DE-80333 München / DE
[N/P]
Former [1989/39]For all designated states
SIEMENS AKTIENGESELLSCHAFT
Wittelsbacherplatz 2
D-80333 München / DE
Inventor(s)01 / Kohn, Erhard
6 State Park Drive
Titusville, NJ 08560 / US
02 / Levy, Harold M.
61-16 Ravens Crest Drive
Plainsboro, NJ 08536 / US
03 / Lee, Hao
14 Cedar Court
Princeton Junction, NJ 08550 / US
[1989/39]
Application number, filing date89102046.306.02.1989
[1989/39]
Priority number, dateUS1988015851822.02.1988         Original published format: US 158518
[1989/39]
Filing languageEN
Procedural languageDE
PublicationType: A1 Application with search report 
No.:EP0334006
Date:27.09.1989
Language:DE
[1989/39]
Search report(s)(Supplementary) European search report - dispatched on:EP29.06.1989
ClassificationIPC:H01L29/80, H01L29/10, H01L29/205, H01L27/06
[1989/39]
CPC:
H01L29/0646 (EP); H01L27/0605 (EP); H01L29/1029 (EP);
H01L29/7787 (EP)
Designated contracting statesDE,   FR,   GB,   NL [1989/39]
TitleGerman:Heteroübergangsfeldeffekttransistor mit gestapelten Kanalschichten[1989/39]
English:Stacked channel heterojunction fet[1989/39]
French:Transistor à effet de champ à hétérojonction comportant des canaux empilés[1989/39]
File destroyed:20.04.2002
Examination procedure15.03.1990Examination requested  [1990/19]
01.09.1992Application deemed to be withdrawn, date of legal effect  [1993/09]
01.10.1992Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [1993/09]
Fees paidRenewal fee
20.12.1990Renewal fee patent year 03
Penalty fee
Additional fee for renewal fee
02.03.199204   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[X]EP0246641  ;
 [A]EP0119089  ;
 [A]EP0255416
 [AD]  - J. APPL. PHYS., vol. 61, no. 4, 15th February 1987, pages 1503-1509, American Institute of Physics; D.K. ARCH et al.: "Superlattice conduction in superlattice modulation-doped field-effect transistors"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.