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Extract from the Register of European Patents

EP About this file: EP0334052

EP0334052 - Thin film transistor [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  11.06.1994
Database last updated on 16.11.2024
Most recent event   Tooltip11.06.1994No opposition filed within time limitpublished on 03.08.1994 [1994/31]
Applicant(s)For all designated states
International Business Machines Corporation
New Orchard Road
Armonk, NY 10504 / US
[N/P]
Former [1989/39]For all designated states
International Business Machines Corporation
Old Orchard Road
Armonk, N.Y. 10504 / US
Inventor(s)01 / Batey, John
18H Scenic Drive
Croton, N.Y. 10620 / US
02 / Joshi, Raily V.
4-1, Woodbrook Lane
Yorktown Heights N.Y. 10598 / US
[1989/39]
Representative(s)Mönig, Anton
IBM Deutschland Informationssysteme GmbH, Patentwesen und Urheberrecht
70548 Stuttgart / DE
[N/P]
Former [1993/37]Mönig, Anton, Dipl.-Ing.
IBM Deutschland Informationssysteme GmbH, Patentwesen und Urheberrecht
D-70548 Stuttgart / DE
Former [1993/19]Klocke, Peter, Dipl.-Ing.
IBM Deutschland Informationssysteme GmbH Patentwesen und Urheberrecht Pascalstrasse 100
D-70569 Stuttgart / DE
Former [1993/12]Klocke, Peter, Dipl.-Ing.
Patentanwälte Dipl.-Ing. Elmar Ott, Dipl.-Ing. Peter Klocke, Dipl.-Phys. Hans-J. Neubauer, Kappelstrasse 8
D-72160 Horb / DE
Former [1989/39]Gaugel, Heinz, Dipl.-Ing.
IBM Deutschland GmbH Schönaicher Strasse 220
D-7030 Böblingen / DE
Application number, filing date89103360.725.02.1989
[1989/39]
Priority number, dateUS1988017160522.03.1988         Original published format: US 171605
[1989/39]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0334052
Date:27.09.1989
Language:EN
[1989/39]
Type: A3 Search report 
No.:EP0334052
Date:19.09.1990
Language:EN
[1990/38]
Type: B1 Patent specification 
No.:EP0334052
Date:11.08.1993
Language:EN
[1993/32]
Search report(s)(Supplementary) European search report - dispatched on:EP02.08.1990
ClassificationIPC:H01L29/78
[1989/39]
CPC:
H01L29/458 (EP); H01L29/66757 (EP); H01L29/66765 (EP);
H01L29/78654 (EP); H01L29/78663 (EP)
Designated contracting statesDE,   FR,   GB [1989/39]
TitleGerman:Dünnfilm-Transistor[1989/39]
English:Thin film transistor[1989/39]
French:Transistor couche mince[1989/39]
Examination procedure20.01.1990Examination requested  [1990/12]
04.11.1992Despatch of communication of intention to grant (Approval: Yes)
12.02.1993Communication of intention to grant the patent
25.02.1993Fee for grant paid
25.02.1993Fee for publishing/printing paid
Opposition(s)12.05.1994No opposition filed within time limit [1994/31]
Fees paidRenewal fee
13.12.1990Renewal fee patent year 03
24.02.1992Renewal fee patent year 04
18.02.1993Renewal fee patent year 05
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Documents cited:Search[A]EP0197531  ;
 [E]EP0329482
ExaminationEP0068897
 EP0164976
    - RCA REVIEW, volume 31, no. 2, June 1970, pages 306-316; J.M. SHAW et al.: "Vapor-deposited tungsten as a metallization and interconnection material for silicon devices"
    - SOLID STATE TECHNOLOGY, vol. 27, no. 5, May 1984, pages 155-161, Port Washington, New York, US; S.T. MASTROIANNI: "Multilevel metallization device structures and process options"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.