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Extract from the Register of European Patents

EP About this file: EP0346876

EP0346876 - Semiconductor integrated circuit having a CMOS inverter [Right-click to bookmark this link]
Former [1989/51]Semiconductor integrated circuit having a cmos inverter
[1994/37]
StatusNo opposition filed within time limit
Status updated on  15.07.1995
Database last updated on 03.09.2024
Most recent event   Tooltip15.07.1995No opposition filed within time limitpublished on 06.09.1995 [1995/36]
Applicant(s)For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku Kawasaki-shi
Kanagawa 211 / JP
For all designated states
FUJITSU VLSI LIMITED
1844-2, Kozoji-cho 2-chome Kasugai-shi
Aichi 487 / JP
[N/P]
Former [1989/51]For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
For all designated states
FUJITSU VLSI LIMITED
1844-2, Kozoji-cho 2-chome
Kasugai-shi Aichi 487 / JP
Inventor(s)01 / Shizu, Harumi
1-130-1-102, Mizuhodori
Kasugai-shi Aichi, 486 / JP
[1989/51]
Representative(s)Schmidt-Evers, Jürgen, et al
Mitscherlich PartmbB
Patent- und Rechtsanwälte
Postfach 33 06 09
80066 München / DE
[N/P]
Former [1989/51]Schmidt-Evers, Jürgen, Dipl.-Ing., et al
Patentanwälte Mitscherlich & Partner Postfach 33 06 09
D-80066 München / DE
Application number, filing date89110814.414.06.1989
[1989/51]
Priority number, dateJP1988015084817.06.1988         Original published format: JP 15084888
[1989/51]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0346876
Date:20.12.1989
Language:EN
[1989/51]
Type: B1 Patent specification 
No.:EP0346876
Date:14.09.1994
Language:EN
[1994/37]
Search report(s)(Supplementary) European search report - dispatched on:EP16.10.1989
ClassificationIPC:H03K19/003
[1989/51]
CPC:
H03K19/00361 (EP,US); H03K19/003 (KR)
Designated contracting statesDE,   FR,   GB [1989/51]
TitleGerman:Integrierte Halbleiterschaltung mit einem CMOS-Inverter[1989/51]
English:Semiconductor integrated circuit having a CMOS inverter[1994/37]
French:Circuit intégré à semi-conducteurs ayant un inverseur CMOS[1989/51]
Former [1989/51]Semiconductor integrated circuit having a cmos inverter
Examination procedure19.06.1990Examination requested  [1990/33]
30.04.1992Despatch of a communication from the examining division (Time limit: M06)
03.11.1992Reply to a communication from the examining division
08.12.1992Despatch of a communication from the examining division (Time limit: M04)
08.04.1993Reply to a communication from the examining division
11.05.1993Despatch of a communication from the examining division (Time limit: M04)
15.09.1993Reply to a communication from the examining division
08.10.1993Despatch of communication of intention to grant (Approval: Yes)
14.02.1994Communication of intention to grant the patent
16.05.1994Fee for grant paid
16.05.1994Fee for publishing/printing paid
Opposition(s)15.06.1995No opposition filed within time limit [1995/36]
Fees paidRenewal fee
28.06.1991Renewal fee patent year 03
30.06.1992Renewal fee patent year 04
30.06.1993Renewal fee patent year 05
29.06.1994Renewal fee patent year 06
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Documents cited:Search[A]EP0212584  (TOSHIBA KK [JP]);
 [A]EP0251910  (FUJITSU LTD [JP]);
 [A]US4749882  (MORGAN DAVID K [US])
 [X]  - PATENT ABSTRACTS OF JAPAN
ExaminationJP61292412
    - PATENT ABSTRACTS OF JAPAN, vol.11, no.154 (E-508)(2601) 19 May 1987 & JP-A-61292412, & JP61292412 A 19870519
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.