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EP0366939
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EP About this file: EP0366939
| EP0366939 - A process for forming a Schottky barrier gate on gallium-arsenide [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 08.10.1993 Database last updated on 31.08.2024 | Most recent event Tooltip | 15.08.2008 | Change - applicant | published on 17.09.2008 [2008/38] | Applicant(s) | For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto, CA 94304-1112 / US | [N/P] |
| Former [2008/38] | For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto CA 94304-1112 / US | ||
| Former [1991/02] | For all designated states Hewlett-Packard Company Mail Stop 20 B-O, 3000 Hanover Street Palo Alto, California 94304 / US | ||
| Former [1990/19] | For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto California 94304 / US | Inventor(s) | 01 /
Taylor, Thomas W. 800 San Domingo Street Santa Rosa California 95404 / US | 02 /
D'Avanzo, Donald C. 4755 Ponderosa Drive Santa Rosa California 95404 / US | [1990/19] | Representative(s) | Schoppe, Fritz Schoppe, Zimmermann, Stöckeler & Zinkler Patentanwälte Postfach 246 82043 Pullach bei München / DE | [N/P] |
| Former [1990/19] | Schoppe, Fritz, Dipl.-Ing. Patentanwalt, Georg-Kalb-Strasse 9 D-82049 Pullach / DE | Application number, filing date | 89118060.6 | 29.09.1989 | [1990/19] | Priority number, date | US19880265615 | 01.11.1988 Original published format: US 265615 | [1990/19] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0366939 | Date: | 09.05.1990 | Language: | EN | [1990/19] | Type: | A3 Search report | No.: | EP0366939 | Date: | 27.12.1990 | Language: | EN | [1990/52] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 07.11.1990 | Classification | IPC: | H01L21/28 | [1990/19] | CPC: |
H01L29/66863 (EP)
| Designated contracting states | DE, FR, GB [1990/19] | Title | German: | Verfahren zur Herstellung eines Schottkygitters auf GaAs | [1990/19] | English: | A process for forming a Schottky barrier gate on gallium-arsenide | [1990/19] | French: | Procédé pour former une porte à barrière Schottky sur GaAs | [1990/19] | File destroyed: | 12.06.1999 | Examination procedure | 27.06.1991 | Examination requested [1991/34] | 01.10.1993 | Application withdrawn by applicant [1993/48] | 11.10.1993 | Despatch of a communication from the examining division (Time limit: M04) | Fees paid | Renewal fee | 26.08.1991 | Renewal fee patent year 03 | 17.08.1992 | Renewal fee patent year 04 | 20.08.1993 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]US4283483 ; | [A]EP0232894 | [Y] - JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 135, no. 5, May 1988, pages 1311-1312, Manchester, NH, US; B.D. CANTOS et al.: "A reliable method for 0.25-micron gate MESFET fabrication using optical photolithography" | [Y] - JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 133, no. 4, April 1986, page 175C, abstract no. 652; T.W. TAYLOR et al.: "A sub-500 nm optical lithography gate process for GaAs MMIC's" | [AD] - PROCEEDINGS OF THE SYMPOSIUM ON ELECTRON AND ION BEAM SCIENCE AND TECHNOLOGY, Montreal, 1982, pages 450-455; E.L. HU et al.: "Metal-on-polymers masks for ion beam processing" | [XP] - GaAs IC SYMPOSIUM, TECHNICAL DIGEST 1988, Nashville, Tennessee, 6th - 9th November 1988, pages 317-320, IEEE, New York, US; D.C. D'AVANZO et al.: "A manufacturable, 26 GHz GaAs MMIC technology" |