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EP0377084
European procedure
Extract from the Register of European Patents
EP About this file: EP0377084
| EP0377084 - Field effect transistor on an insulator and method of manufacturing same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 24.04.1995 Database last updated on 03.09.2024 | Most recent event Tooltip | 24.04.1995 | No opposition filed within time limit | published on 14.06.1995 [1995/24] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [1990/28] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Takahashi, Minoru Toshibaisogo-dairyo 2-9-3 Shiomidai Isogo-ku Yokohama-shi Kanagawa-ken / JP | 02 /
Yoshimi, Makoto 1-24-1 Shinmachi Setagaya-ku Tokyo / JP | 03 /
Shigyo, Naoyuki Haitsushibamoto B-203 4-18-5 Seya Seya-ku Yokohama-shi Kanagawa-ken / JP | [1990/28] | Representative(s) | Lehn, Werner, et al Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20 81904 München / DE | [N/P] |
| Former [1990/28] | Lehn, Werner, Dipl.-Ing., et al Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20 D-81904 München / DE | Application number, filing date | 89118307.1 | 03.10.1989 | [1990/28] | Priority number, date | JP19880249382 | 03.10.1988 Original published format: JP 24938288 | JP19890034406 | 14.02.1989 Original published format: JP 3440689 | JP19890100310 | 21.04.1989 Original published format: JP 10031089 | [1990/28] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0377084 | Date: | 11.07.1990 | Language: | EN | [1990/28] | Type: | B1 Patent specification | No.: | EP0377084 | Date: | 22.06.1994 | Language: | EN | [1994/25] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 22.05.1990 | Classification | IPC: | H01L29/784, H01L29/10, H01L21/84 | [1990/28] | CPC: |
H01L29/66772 (EP);
H01L29/78696 (EP)
| Designated contracting states | DE, FR [1990/28] | Title | German: | Feldeffekttransistor auf einem Isolator und Verfahren zu seiner Herstellung | [1990/28] | English: | Field effect transistor on an insulator and method of manufacturing same | [1990/28] | French: | Transistor à effet de champ sur isolant et sa méthode de fabrication | [1990/28] | Examination procedure | 03.10.1989 | Examination requested [1990/28] | 08.07.1992 | Despatch of a communication from the examining division (Time limit: M06) | 11.01.1993 | Reply to a communication from the examining division | 26.01.1993 | Despatch of a communication from the examining division (Time limit: M02) | 26.03.1993 | Reply to a communication from the examining division | 06.08.1993 | Despatch of communication of intention to grant (Approval: Yes) | 22.12.1993 | Communication of intention to grant the patent | 18.03.1994 | Fee for grant paid | 18.03.1994 | Fee for publishing/printing paid | Opposition(s) | 23.03.1995 | No opposition filed within time limit [1995/24] | Fees paid | Renewal fee | 10.10.1991 | Renewal fee patent year 03 | 09.10.1992 | Renewal fee patent year 04 | 11.10.1993 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]EP0129037 ; | [Y]GB2118365 | [X] - JAPANESE JOURNAL OF APPLIED PHYSICS; SUPPLEMENTS, 20th - 22nd August 1986, pages 81-84, Tokyo, JP; T. UEDA et al.: "Electrical characteristics of submicron poly si MOSFET" | [X] - I.E.E.E. ELECTRON DEVICE LETTERS, vol. EDL-7, no. 4, April 1986, pages 244-246, IEEE, New York, NY, US; J.-P. COLINGE: "Subthreshold slope of thin-film SOI MOSFET's" | [X] - I.E.E.E. TRANSACTIONS ON ELECTRON DEVICES, vol. ED-34, no. 10, October 1987, pages 2173-2177, IEEE, New York, NY, US; J.-P. COLINGE: "Hot-electron effects in silicon-on-insulator n-channel MOSFET's" |