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EP0377126
European procedure
Extract from the Register of European Patents
EP About this file: EP0377126
| EP0377126 - Schottky gate field-effect semiconductor device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 14.02.1997 Database last updated on 17.07.2024 | Most recent event Tooltip | 14.02.1997 | No opposition filed within time limit | published on 02.04.1997 [1997/14] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [1995/01] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | ||
| Former [1990/28] | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho Saiwai-ku Kawasaki-shi / JP | Inventor(s) | 01 /
Shimada, Kizashi Intellectual Property Division K.K. Toshiba 1-1 Shibaura 1-chome Minato-ku Tokyo 105 / JP | 02 /
Akiyama, Tatsuo Intellectual Property Division K.K. Toshiba 1-1 Shibaura 1-chome Minato-ku Tokyo 105 / JP | 03 /
Koshino, Yutaka Intellectual Property Division K.K. Toshiba 1-1 Shibaura 1-chome Minato-ku Tokyo 105 / JP | [1990/28] | Representative(s) | Lehn, Werner, et al Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20 81904 München / DE | [N/P] |
| Former [1990/28] | Lehn, Werner, Dipl.-Ing., et al Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20 D-81904 München / DE | Application number, filing date | 89122454.5 | 06.12.1989 | [1990/28] | Priority number, date | JP19880309368 | 07.12.1988 Original published format: JP 30936888 | [1990/28] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0377126 | Date: | 11.07.1990 | Language: | EN | [1990/28] | Type: | A3 Search report | No.: | EP0377126 | Date: | 25.07.1990 | Language: | EN | [1990/30] | Type: | B1 Patent specification | No.: | EP0377126 | Date: | 10.04.1996 | Language: | EN | [1996/15] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 06.06.1990 | Classification | IPC: | H01L29/47, H01L29/812 | [1996/15] | CPC: |
H01L29/475 (EP,KR,US)
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| Former IPC [1990/28] | H01L29/64, H01L29/80 | Designated contracting states | DE, FR, GB [1990/28] | Title | German: | Feldeffekthalbleiteranordnung mit Schottky-Gate | [1990/28] | English: | Schottky gate field-effect semiconductor device | [1990/28] | French: | Dispositif semi-conducteur à effet de champ à grille Schottky | [1990/28] | Examination procedure | 06.12.1989 | Examination requested [1990/28] | 03.12.1992 | Despatch of a communication from the examining division (Time limit: M04) | 14.02.1994 | Despatch of a communication from the examining division (Time limit: M04) | 24.06.1994 | Reply to a communication from the examining division | 03.05.1995 | Despatch of communication of intention to grant (Approval: Yes) | 17.08.1995 | Communication of intention to grant the patent | 31.10.1995 | Fee for grant paid | 31.10.1995 | Fee for publishing/printing paid | Opposition(s) | 11.01.1997 | No opposition filed within time limit [1997/14] | Fees paid | Renewal fee | 09.12.1991 | Renewal fee patent year 03 | 09.10.1992 | Renewal fee patent year 04 | 13.12.1993 | Renewal fee patent year 05 | 07.12.1994 | Renewal fee patent year 06 | 08.12.1995 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]FR2550889 (THOMSON CSF [FR]) | [Y] - IEEE ELECTRON DEVICE LETTERS. vol. 7, no. 3, March 1986, NEW YORK US pages 185 - 187; C.CANALI ET.AL.: "GATE METALLIZATION "SINKING" INTO THE ACTIVE CHANNEL IN TI/W/AU METALLIZED POWER MESFET'S" |