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Extract from the Register of European Patents

EP About this file: EP0344863

EP0344863 - A method of producing a thin film transistor [Right-click to bookmark this link]
Former [1989/49]Thin film transistor and method of making same
[1996/34]
StatusNo opposition filed within time limit
Status updated on  27.06.1997
Database last updated on 21.08.2024
Most recent event   Tooltip18.07.2008Change - representativepublished on 20.08.2008  [2008/34]
Applicant(s)For all designated states
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW
Kapeldreef 75
3030 Leuven-Heverlee / BE
[N/P]
Former [1989/49]For all designated states
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW
Kapeldreef 75
B-3030 Leuven-Heverlee / BE
Inventor(s)01 / Kobayashi, Kazuhiro
3-18-5 Minami-tsukaguchi
Amagasaki-City Hyogo 661 / JP
02 / Baert, Kris August Emilia Ferdinand
Platte-Lostraat 17
B-3200 Leuven / BE
03 / Nijs, Johan Francis Albert
Slotgracht 4
B-3202 Lubbeek / BE
[1989/49]
Representative(s)Land, Addick Adrianus Gosling, et al
Arnold & Siedsma
Bezuidenhoutseweg 57
2594 AC Den Haag / NL
[N/P]
Former [2008/34]Land, Addick Adrianus Gosling, et al
Arnold & Siedsma Sweelinckplein 1
2517 GK Den Haag / NL
Former [1989/49]Land, Addick Adrianus Gosling, et al
Arnold & Siedsma, Advocaten en Octrooigemachtigden, Sweelinckplein 1
NL-2517 GK Den Haag / NL
Application number, filing date89201379.830.05.1989
[1989/49]
Priority number, dateNL1988000137930.05.1988         Original published format: NL 8801379
[1989/49]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0344863
Date:06.12.1989
Language:EN
[1989/49]
Type: B1 Patent specification 
No.:EP0344863
Date:21.08.1996
Language:EN
[1996/34]
Search report(s)(Supplementary) European search report - dispatched on:EP02.10.1989
ClassificationIPC:H01L21/84, H01L21/86, H01L21/205, H01L29/78
[1989/49]
CPC:
H01L29/66757 (EP,US); H01L29/786 (KR); H01L21/0242 (EP,US);
H01L21/02532 (EP,US); H01L21/0262 (EP,US); Y10S148/122 (EP,US)
Designated contracting statesAT,   BE,   CH,   DE,   ES,   FR,   GB,   GR,   IT,   LI,   LU,   NL,   SE [1989/49]
TitleGerman:Verfahren zur Herstellung eines Dünnfilmtransistors[1996/34]
English:A method of producing a thin film transistor[1996/34]
French:Procédé pour fabriquer un transistor à film mince[1996/34]
Former [1989/49]Dünnfilmtransistor und Verfahren zu seiner Herstellung
Former [1989/49]Thin film transistor and method of making same
Former [1989/49]Transistor à film mince et procédé pour le fabriquer
Examination procedure22.01.1990Examination requested  [1990/12]
12.05.1992Despatch of a communication from the examining division (Time limit: M06)
17.11.1992Reply to a communication from the examining division
04.01.1993Despatch of a communication from the examining division (Time limit: M06)
09.07.1993Reply to a communication from the examining division
08.03.1995Date of oral proceedings
22.05.1995Despatch of a communication from the examining division (Time limit: M04)
22.05.1995Minutes of oral proceedings despatched
21.08.1995Reply to a communication from the examining division
05.01.1996Despatch of communication of intention to grant (Approval: Yes)
21.02.1996Communication of intention to grant the patent
09.04.1996Fee for grant paid
09.04.1996Fee for publishing/printing paid
Opposition(s)22.05.1997No opposition filed within time limit [1997/33]
Fees paidRenewal fee
06.05.1991Renewal fee patent year 03
24.07.1992Renewal fee patent year 04
14.05.1993Renewal fee patent year 05
27.05.1994Renewal fee patent year 06
26.05.1995Renewal fee patent year 07
28.05.1996Renewal fee patent year 08
Penalty fee
Additional fee for renewal fee
01.06.199204   M06   Fee paid on   24.07.1992
Opt-out from the exclusive  Tooltip
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Patent Court
See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT21.08.1996
CH21.08.1996
ES21.08.1996
GR21.08.1996
IT21.08.1996
LI21.08.1996
SE21.11.1996
[2008/01]
Former [2002/24]AT21.08.1996
CH21.08.1996
ES21.08.1996
GR21.08.1996
IT21.08.1996
LI21.08.1996
SE21.11.1996
Former [2000/04]AT21.08.1996
CH21.08.1996
GR21.08.1996
IT21.08.1996
LI21.08.1996
SE21.11.1996
Former [1999/42]AT21.08.1996
CH21.08.1996
IT21.08.1996
LI21.08.1996
SE21.11.1996
Former [1998/04]AT21.08.1996
CH21.08.1996
LI21.08.1996
SE21.11.1996
Former [1997/18]AT21.08.1996
SE21.11.1996
Former [1997/16]AT21.08.1996
Documents cited:Search[A]EP0062079  (AGENCY IND SCIENCE TECHN [JP], et al);
 [A]US4485121  (MATSUMURA HIDEKI [JP]);
 [A]GB2156385  (AGENCY IND SCIENCE TECHN, et al);
 [A]EP0161555  (ENERGY CONVERSION DEVICES INC [US]);
 [A]US4625224  (NAKAGAWA KATSUMI [JP], et al);
 [A]EP0232619  (CANON KK [JP])
ExaminationUS4226898
    - Chemical Vapor Deposition for Microelectronics, by A. Sherman, Noyes Publ., N. J. 1987, USA.
    - Chemical Vapor Dep. for Microelectronics, by A. Sherman, Noyes Publ., N.J. 1987, USA
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.