Extract from the Register of European Patents

EP Citations: EP0406434

Cited inSearch
Type:Patent literature
Publication No.:EP0001538  [X]
 (IBM [US]);
Type:Patent literature
Publication No.:US4615764  [X]
 (BOBBIO STEPHEN M [US], et al);
Type:Patent literature
Publication No.:EP0174249  [X]
 (FUJITSU LTD [JP]);
Type:Patent literature
Publication No.:EP0106174  [X]
 (HITACHI LTD [JP])
Type:Non-patent literature
Publication information:[X]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 20, no. 2, July 1977, page 757, New York, US; J.W. COBURN: "Increasing the selectivity of the plasma etch rate of SiO2 relative to Si"
Cited inInternational search
Type:Patent literature
Publication No.:JPH05675573  [X]
 ;
Type:Patent literature
Publication No.:JPH05621330  [Y]
 ;
Type:Patent literature
Publication No.:JPS61123142  [Y]
 (MATSUSHITA ELECTRIC IND CO LTD);
Type:Patent literature
Publication No.:JPS57139927  [Y]
 (NIPPON ELECTRIC CO);
Type:Patent literature
Publication No.:JPS61266584  [Y]
 (TOKUDA SEISAKUSHO);
Type:Patent literature
Publication No.:JPS58150429  [Y]
 (HITACHI LTD)