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EP0393637
European procedure
Extract from the Register of European Patents
EP About this file: EP0393637
| EP0393637 - Plasma processing method [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 22.12.1994 Database last updated on 02.11.2024 | Most recent event Tooltip | 22.12.1994 | No opposition filed within time limit | published on 15.02.1995 [1995/07] | Applicant(s) | For all designated states TOKYO ELECTRON LIMITED 1-26-2, Nishi-Shinjuku Shinjuku-ku Tokyo / JP | [N/P] |
| Former [1990/43] | For all designated states TOKYO ELECTRON LIMITED 1-26-2, Nishi-Shinjuku Shinjuku-ku Tokyo / JP | Inventor(s) | 01 /
Kojima, Hiroshi, 305 Green-Heim-Midoriyama, 1-22-1 Miwamidoriyama, Machida-shi Tokyo / JP | 02 /
Tahara, Yoshifumi, A202 Hachibanchi-Corpo 1-8-8 Chuorinkan Yamato-shi, Kanagawa-ken / JP | 03 /
Arai, Izumi 4-3-204, Wakabadai, Asahi-ku Yokohama-shi / JP | [1990/43] | Representative(s) | Lehn, Werner, et al Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20 81904 München / DE | [N/P] |
| Former [1990/43] | Lehn, Werner, Dipl.-Ing., et al Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20 D-81904 München / DE | Application number, filing date | 90107369.2 | 18.04.1990 | [1990/43] | Priority number, date | JP19890099068 | 18.04.1989 Original published format: JP 9906889 | [1990/43] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0393637 | Date: | 24.10.1990 | Language: | EN | [1990/43] | Type: | B1 Patent specification | No.: | EP0393637 | Date: | 16.02.1994 | Language: | EN | [1994/07] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 06.08.1990 | Classification | IPC: | C23F4/00 | [1990/43] | CPC: |
H01J37/3244 (EP,US);
H01L21/306 (KR);
C23F4/00 (EP,US);
H01J37/32862 (EP,US);
H01L21/3065 (EP,US);
H01L21/31116 (EP,US);
H01J2237/334 (EP,US)
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| Designated contracting states | DE, GB, IT [1990/43] | Title | German: | Vorrichtung zum Plasmaverfahren | [1990/43] | English: | Plasma processing method | [1990/43] | French: | Méthode pour procédé par plasma | [1990/43] | Examination procedure | 02.01.1991 | Examination requested [1991/10] | 25.08.1992 | Despatch of a communication from the examining division (Time limit: M04) | 17.12.1992 | Reply to a communication from the examining division | 01.04.1993 | Despatch of communication of intention to grant (Approval: Yes) | 26.07.1993 | Communication of intention to grant the patent | 07.10.1993 | Fee for grant paid | 07.10.1993 | Fee for publishing/printing paid | Opposition(s) | 18.11.1994 | No opposition filed within time limit [1995/07] | Fees paid | Renewal fee | 30.04.1992 | Renewal fee patent year 03 | 30.04.1993 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]JP6065533 | [X] - PATENT ABSTRACTS OF JAPAN, vol. 9, no. 201 (E-336)[1924], 17th August 1985; & JP-A-60 65 533 (HITACHI SEISAKUSHO K.K.) 15-04-1985, & JP6065533 A 00000000 | [A] - JOURNAL OF VACUUM SCIENCE TECHNOLOGY, vol. 15, no. 2, March/April 1978, pages 334-337, American Vacuum Society, New York, US; P.M. SCHAIBLE et al.: "Reactive ion etching of aluminum and aluminum alloys in an rf plasma containg halogen species" |