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EP0413982
European procedure
Extract from the Register of European Patents
EP About this file: EP0413982
| EP0413982 - Impurity doping method with adsorbed diffusion source [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 20.03.1998 Database last updated on 03.09.2024 | Most recent event Tooltip | 20.03.1998 | No opposition filed within time limit | published on 06.05.1998 [1998/19] | Applicant(s) | For all designated states NISHIZAWA, Junichi 6-16, Komegabukuro 1-chome Sendai-shi Miyagi / JP | For all designated states Seiko Instruments Inc. 31-1, Kameido 6-chome Koto-ku Tokyo 136 / JP | [N/P] |
| Former [1991/09] | For all designated states Nishizawa, Junichi 6-16, Komegabukuro 1-chome Sendai-shi Miyagi / JP | ||
| For all designated states SEIKO INSTRUMENTS INC. 31-1, Kameido 6-chome Koto-ku Tokyo 136 / JP | Inventor(s) | 01 /
Nishizawa, Junichi 6-16 Komegabukuro 1-chome Sendai-Shi, Miyagi, Tokyo / JP | 02 /
Aoki, Kenji, C/o Seiko Instruments Inc. 31-1 kameido 6-chome Koto-ku, Tokyo / JP | [1991/09] | Representative(s) | Fleuchaus, Leo, et al Fleuchaus & Gallo Melchiorstrasse 42 81479 München / DE | [N/P] |
| Former [1991/09] | Fleuchaus, Leo, Dipl.-Ing., et al Melchiorstrasse 42 D-81479 München / DE | Application number, filing date | 90114184.6 | 24.07.1990 | [1991/09] | Priority number, date | JP19890194686 | 27.07.1989 Original published format: JP 19468689 | [1991/09] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0413982 | Date: | 27.02.1991 | Language: | EN | [1991/09] | Type: | B1 Patent specification | No.: | EP0413982 | Date: | 14.05.1997 | Language: | EN | [1997/20] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 09.10.1990 | Classification | IPC: | H01L21/225, H01L21/223 | [1991/09] | CPC: |
H01L21/2254 (EP,US)
| Designated contracting states | DE, FR, GB, IT, NL [1991/09] | Title | German: | Dotierungsverfahren mittels einer adsorbierten Diffusionquelle | [1991/09] | English: | Impurity doping method with adsorbed diffusion source | [1991/09] | French: | Méthode de dopage à l'aide d'une source de diffusion adsorbée | [1991/09] | Examination procedure | 29.05.1991 | Examination requested [1991/31] | 14.04.1993 | Despatch of a communication from the examining division (Time limit: M06) | 12.10.1993 | Reply to a communication from the examining division | 24.08.1994 | Despatch of a communication from the examining division (Time limit: M06) | 03.03.1995 | Reply to a communication from the examining division | 01.07.1996 | Despatch of communication of intention to grant (Approval: Yes) | 06.11.1996 | Communication of intention to grant the patent | 10.01.1997 | Fee for grant paid | 10.01.1997 | Fee for publishing/printing paid | Opposition(s) | 17.02.1998 | No opposition filed within time limit [1998/19] | Fees paid | Renewal fee | 23.07.1992 | Renewal fee patent year 03 | 27.07.1993 | Renewal fee patent year 04 | 01.08.1994 | Renewal fee patent year 05 | 11.07.1995 | Renewal fee patent year 06 | 11.07.1996 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]JP63166220 ; | [X]EP0322921 (FUJITSU LTD [JP]); | [X]US4791074 (TSUNASHIMA YOSHITAKA [JP], et al); | [AD]EP0259777 (JAPAN RES DEV CORP [JP], et al) | [X] - NIKKEI HIGH TECH REPORT, vol. 4, no. 7, 13th February 1989, page 10, Tokyo, JP; T. ITO: "UV epitaxy applied to make transistor" | [X] - PATENT ABSTRACTS OF JAPAN, vol. 12, no. 430 (E-682)[3277], 14th November 1988; & JP-A-63 166 220 (TOSHIBA CORP.) 09-07-1988, & JP63166220 A 00000000 | [A] - JOURNAL OF APPLIED PHYSICS, vol. 59, no. 12, June 1986, pages 4032-4037, American Institute of Physics, Woodbury, New York, US; M.L. YU et al.: "Doping reaction of PH3 and B2H6 with Si(100)" |