Deutsch English Français

Contact

EP0412502

European procedure

Quick help

Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability

2022.02.11

More...

News flashes

Italy joins the Federated Register

Click here for more information on the Federated Register.

2025-06-12

More...

Extract from the Register of European Patents

EP About this file: EP0412502

EP0412502 - Method of making MES type field effect transistor using III-V compound semiconductor [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 29.11.1995 Database last updated on 11.04.2026
Most recent event Tooltip	29.11.1995	Application deemed to be withdrawn	published on 17.01.1996 [1996/03]
Applicant(s)	For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP
	[N/P]
Former [1991/07]	For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP
Inventor(s)	01 / Imamura, Souichi, c/o Intellectual Property Div. Kabushiki Kaisha Toshiba, 1-1 Shibaura 1-chome Minato-ku, Tokyo 105 / JP
	02 / Suga, Toru, c/o Intellectual Property Div. Kabushiki Kaisha Toshiba, 1-1 Shibaura 1-chome Minato-ku, Tokyo 105 / JP
	[1991/07]
Representative(s)	Lehn, Werner, et al Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20 81904 München / DE
	[N/P]
Former [1991/07]	Lehn, Werner, Dipl.-Ing., et al Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20 D-81904 München / DE
Application number, filing date	90115162.1	07.08.1990
	[1991/07]
Priority number, date	JP19890208507	11.08.1989 Original published format: JP 20850789
	[1991/07]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	EP0412502
	Date:	13.02.1991
	Language:	EN
	[1991/07]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	08.11.1990
Classification	IPC:	H01L21/265, H01L21/338	[1991/07]
	CPC:	H10P30/206 (EP,US); H10D30/0614 (EP); H10P30/212 (EP,US)
Designated contracting states	DE, FR, GB [1991/07]
Title	German:	Verfahren zur Herstellung eines MES-Typ Feld-Effekt-Transistors in einem III-V zusammengesetzten Halbleiter	[1991/07]
	English:	Method of making MES type field effect transistor using III-V compound semiconductor	[1991/07]
	French:	Méthode pour faire un transistor à effet de champ du type MES dans un semi-conducteur composé III-V	[1991/07]
File destroyed:	03.03.2001
Examination procedure	07.08.1990	Examination requested [1991/07]
	20.09.1993	Despatch of a communication from the examining division (Time limit: M06)
	30.03.1994	Reply to a communication from the examining division
	06.03.1995	Despatch of a communication from the examining division (Time limit: M04)
	18.07.1995	Application deemed to be withdrawn, date of legal effect [1996/03]
	22.08.1995	Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [1996/03]
Fees paid	Renewal fee
	10.08.1992	Renewal fee patent year 03
	11.08.1993	Renewal fee patent year 04
	09.08.1994	Renewal fee patent year 05
	Penalty fee
	Additional fee for renewal fee
	31.08.1995	06 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[A] GaAs IC SYMPOSIUM, TECHNICAL DIGEST 1986, Grenelefe, Florida, 28th - 30th October 1986, pages 55-58, IEEE, New York, US; I. OHTA et al.: "An ideal-profile implantation process for GaAs analog MMICs" [A]
		[A] G.E.C. JOURNAL OF RESEARCH, vol. 1, no. 3, 1983, pages 174-177, Rugby, GB; D.C. BARTLE et al.: "Selective area ion implantation for gallium arsenide microwave devices and circuits" [A]
		[A] IEEE ELECTRON DEVICE LETTERS, vol. EDL-2, no. 12, December 1981, pages 309-311, IEEE, New York, US; W.M. DUNCAN et al.: "A single step selective implantation technology for multiply doped layers using proximity annealing" [A]

The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.