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Extract from the Register of European Patents

EP About this file: EP0437834

EP0437834 - Method for manufacturing a semiconductor integrated circuit [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  17.01.1997
Database last updated on 18.11.2024
Most recent event   Tooltip17.01.1997No opposition filed within time limitpublished on 05.03.1997 [1997/10]
Applicant(s)For all designated states
SANYO ELECTRIC CO., LTD.
2-18, Keihan-Hondori
Moriguchi-shi, Osaka / JP
[1991/30]
Inventor(s)01 / Takeda, Kazuo
32-7, Kanayama-machi
Outa-shi, Gunma / JP
02 / Sekikawa, Nobuyuki
8-101, Izumi-Ryo, 57-1, Sumiyoshi
Ouizumi-machi, Oura-gun, Gunma / JP
03 / Tabata, Teruo
624-7, Shimokoizumi, Ouizumi-machi
Oura-gun, Gunma / JP
04 / Sano, Yoshiaki
Izumi-Ryo 1939-24, Shimokoizumi
Ouizumi-machi, Oura-gun, Gunma / JP
[1991/30]
Representative(s)Wächtershäuser, Günter
Wächtershäuser & Hartz
Patentanwälte
Ottostrasse 4
80333 München / DE
[N/P]
Former [1991/30]Wächtershäuser, Günter, Prof. Dr.
Patentanwalt, Tal 29
D-80331 München / DE
Application number, filing date90125499.527.12.1990
[1991/30]
Priority number, dateJP1989034081028.12.1989         Original published format: JP 34081089
JP1989034081328.12.1989         Original published format: JP 34081389
JP1989034081428.12.1989         Original published format: JP 34081489
JP1989034081628.12.1989         Original published format: JP 34081689
[1991/30]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0437834
Date:24.07.1991
Language:EN
[1991/30]
Type: B1 Patent specification 
No.:EP0437834
Date:13.03.1996
Language:EN
[1996/11]
Search report(s)(Supplementary) European search report - dispatched on:EP21.05.1991
ClassificationIPC:H01L21/266, H01L21/82, H01L21/331, H01L21/033, H01L21/76
[1996/11]
CPC:
H01L21/033 (EP); H01L21/761 (EP); H01L21/8224 (EP);
H01L21/8226 (EP)
Former IPC [1991/30]H01L21/266, H01L21/82, H01L21/331
Designated contracting statesDE,   FR,   IT,   NL [1991/30]
TitleGerman:Verfahren zur Herstellung einer integrierten Halbleiterschaltung[1991/30]
English:Method for manufacturing a semiconductor integrated circuit[1991/30]
French:Procédé pour la fabrication d'un circuit intégré à semiconducteur[1991/30]
Examination procedure23.01.1992Examination requested  [1992/13]
21.03.1994Despatch of a communication from the examining division (Time limit: M04)
21.06.1994Despatch of a communication from the examining division (Time limit: M06)
02.01.1995Reply to a communication from the examining division
21.02.1995Despatch of communication of intention to grant (Approval: Yes)
27.06.1995Communication of intention to grant the patent
25.09.1995Fee for grant paid
25.09.1995Fee for publishing/printing paid
Opposition(s)14.12.1996No opposition filed within time limit [1997/10]
Fees paidRenewal fee
29.12.1992Renewal fee patent year 03
28.09.1993Renewal fee patent year 04
28.09.1994Renewal fee patent year 05
22.12.1995Renewal fee patent year 06
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Documents cited:Search[X]US3933528  ;
 [Y]US4780425  ;
 [Y]US3915766  ;
 [X]FR2260186  ;
 [X]EP0007923  ;
 [A]EP0005164
Examination   - Latest LSI Process Technology, April 25, 1984, published by the Industrial Board of Inquiry, Japan (relevant pages filed by the applicant with letter dated 2.1.95)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.