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EP About this file: EP0390606

EP0390606 - Semiconductor device comprising a bipolar transistor [Right-click to bookmark this link]
Former [1990/40]	Semiconductor device having transistor improved in emitter region and/or base electrode
	[1999/39]
Status	The application has been refused Status updated on 13.04.2001 Database last updated on 19.07.2024
Most recent event Tooltip	13.04.2001	Refusal of application	published on 30.05.2001 [2001/22]
Applicant(s)	For all designated states CANON KABUSHIKI KAISHA 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo / JP
	[N/P]
Former [1990/40]	For all designated states CANON KABUSHIKI KAISHA 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo / JP
Inventor(s)	01 / Ohmi, Tadahiro 1-17-301, Komegafukuro 2-chome, Aoba-ku Sendai-shi, Miyagi-ken / JP
	02 / Miyawaki, Mamoru 2-5-302, Daida 6-chome, Setagaya-ku Tokyo / JP
	[1990/40]
Representative(s)	Beresford, Keith Denis Lewis, et al Beresford Crump LLP 16 High Holborn London WC1V 6BX / GB
	[N/P]
Former [1990/40]	Beresford, Keith Denis Lewis, et al BERESFORD & Co. 2-5 Warwick Court High Holborn London WC1R 5DJ / GB
Application number, filing date	90303477.5	30.03.1990
	[1990/40]
Priority number, date	JP19890083212	31.03.1989 Original published format: JP 8321289
	JP19890083213	31.03.1989 Original published format: JP 8321389
	[1990/40]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP0390606
	Date:	03.10.1990
	Language:	EN
	[1990/40]
	Type:	A3 Search report
	No.:	EP0390606
	Date:	09.10.1991
	Language:	EN
	[1991/41]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	21.08.1991
Classification	IPC:	H01L29/737, H01L29/732, H01L31/11, H01L29/161, H01L29/423, H01L29/417	[1999/39]
	CPC:	H01L27/14681 (EP); H01L29/0804 (EP); H01L29/161 (EP); H01L29/41708 (EP); H01L29/42304 (EP); H01L29/732 (EP); (+) H01L29/7371 (EP); H01L31/1105 (EP) (-)
	Former IPC [1991/19]	H01L29/73, H01L29/08, H01L29/52, H01L29/60, H01L27/146
	Former IPC [1990/40]	H01L27/146, H01L29/08
Designated contracting states	DE, FR, GB, NL [1990/40]
Title	German:	Halbleiteranordnung mit einem Bipolartransistor	[1999/39]
	English:	Semiconductor device comprising a bipolar transistor	[1999/39]
	French:	Dispositif semi-conducteur comprenant un transistor bipolaire	[1999/39]
	Former [1990/40]	Halbleitervorrichtung mit einem hinsichtlich des Emittorgebietes und/oder der Basiselektrode verbesserten Transistor
	Former [1990/40]	Semiconductor device having transistor improved in emitter region and/or base electrode
	Former [1990/40]	Dispositif semi-conducteur comprenant un transistor modifié en ce qui concerne la région d'émetteur et/ou l'électrode de base
Examination procedure	31.12.1990	Examination requested [1991/10]
	23.09.1991	New documents discovered [1991/46]
	18.11.1994	Despatch of a communication from the examining division (Time limit: M06)
	26.05.1995	Reply to a communication from the examining division
	05.07.1996	Despatch of a communication from the examining division (Time limit: M06)
	15.01.1997	Reply to a communication from the examining division
	08.10.1997	Despatch of a communication from the examining division (Time limit: M04)
	10.10.1997	Reply to a communication from the examining division
	28.01.1998	Despatch of a communication from the examining division (Time limit: M06)
	07.08.1998	Reply to a communication from the examining division
	18.05.2000	Despatch of communication of intention to grant (Approval: )
	27.12.2000	Despatch of communication that the application is refused, reason: formalities examination [2001/22]
	06.01.2001	Application refused, date of legal effect [2001/22]
Fees paid	Renewal fee
	23.03.1992	Renewal fee patent year 03
	30.03.1993	Renewal fee patent year 04
	28.03.1994	Renewal fee patent year 05
	24.03.1995	Renewal fee patent year 06
	21.03.1996	Renewal fee patent year 07
	19.03.1997	Renewal fee patent year 08
	18.03.1998	Renewal fee patent year 09
	19.03.1999	Renewal fee patent year 10
	20.03.2000	Renewal fee patent year 11
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[A]JP60021558 ;
		[X]EP0229672 ;
		[X]EP0194832 ;
		[X]EP0240307 ;
		[Y]EP0200532 ;
		[X]GB2029096 ;
		[A]EP0066810 ;
		[A]EP0168325
		[A] - JOURNAL OF THE ELECTROCHEMICAL SOCIETY. vol. 134, no. 10, October 1987, MANCHESTER, NEW HAMP pages 2545 - 2549; T.Sugii et al.: "Si Heterojunction Bipolar Transistors with Single-Crystalline beta-SiC Emitters".
		[A] - PATENT ABSTRACTS OF JAPAN, Vol. 009, No. 140 (E-321), 14 June 1985; & JP-A-60 021 558 (MITSUBISHI) 2 February 1985, & JP60021558 A 19850202
		[X] - Electronic Design, Vol. 36, No. 21, September 1988, page 36, Hasbrouck Heights, NJ, US; D. BURSKY: "Simplified hetero-structure eases GaAs device fabrication".

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