EP0407088 - Method of forming an amorphous semiconductor film [Right-click to bookmark this link] | |||
Former [1991/02] | Amorphous semiconductor film and process for its production | ||
[1998/19] | Status | No opposition filed within time limit Status updated on 12.03.1999 Database last updated on 24.08.2024 | Most recent event Tooltip | 25.07.2008 | Change - representative | published on 27.08.2008 [2008/35] | Applicant(s) | For all designated states Mitsui Chemicals, Inc. 2-5, Kasumigaseki 3-chome, Chiyoda-ku Tokyo 100-6070 / JP | [N/P] |
Former [1998/18] | For all designated states Mitsui Chemicals, Inc. 2-5, Kasumigaseki 3-chome, Chiyoda-ku Tokyo 100-6070 / JP | ||
Former [1992/23] | For all designated states MITSUI TOATSU CHEMICALS, Inc. 2-5 Kasumigaseki 3-chome Chiyoda-Ku Tokyo 100 / JP | ||
Former [1991/02] | For all designated states MITSUI TOATSU CHEMICALS, INCORPORATED 2-5, 3-chome, Kasumigaseki Chiyoda-ku Tokyo / JP | Inventor(s) | 01 /
Miyachi, Kenji 2882, Iijima-cho, Sakae-ku Yokohama-shi, Kanagawa-ken / JP | 02 /
Fukuda, Nobuhiro 2882, Iijima-cho, Sakae-ku Yokohama-shi, Kanagawa-ken / JP | 03 /
Ashida, Yoshinori 1541 Yabe-cho, Totsuka-ku Yokohama-shi, Kanagawa-ken / JP | 04 /
Koyama, Masato 4-1-28 Hase Kamakura-shi, Kanagawa-ken / JP | [1991/02] | Representative(s) | Stuart, Ian Alexander, et al Mewburn Ellis LLP City Tower 40 Basinghall Street London EC2V 5DE / GB | [N/P] |
Former [2008/35] | Stuart, Ian Alexander, et al Mewburn Ellis LLP York House 23 Kingsway London WC2B 6HP / GB | ||
Former [1991/02] | Stuart, Ian Alexander, et al MEWBURN ELLIS York House 23 Kingsway London WC2B 6HP / GB | Application number, filing date | 90307023.3 | 27.06.1990 | [1991/02] | Priority number, date | JP19890163710 | 28.06.1989 Original published format: JP 16371089 | JP19890165402 | 29.06.1989 Original published format: JP 16540289 | JP19890165403 | 29.06.1989 Original published format: JP 16540389 | JP19890199258 | 02.08.1989 Original published format: JP 19925889 | JP19890199259 | 02.08.1989 Original published format: JP 19925989 | JP19890199260 | 02.08.1989 Original published format: JP 19926089 | JP19890200234 | 03.08.1989 Original published format: JP 20023489 | JP19900011803 | 23.01.1990 Original published format: JP 1180390 | [1991/02] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0407088 | Date: | 09.01.1991 | Language: | EN | [1991/02] | Type: | B1 Patent specification | No.: | EP0407088 | Date: | 06.05.1998 | Language: | EN | [1998/19] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 26.09.1990 | Classification | IPC: | H01L31/20, C23C16/22, C23C14/12 | [1991/02] | CPC: |
C23C14/0682 (EP,US);
C23C14/58 (EP);
C23C14/5826 (EP,US);
C23C14/5846 (EP);
C23C16/56 (EP);
H01L21/02381 (EP);
H01L21/0242 (EP);
H01L21/02529 (EP);
H01L21/02532 (EP);
H01L21/02535 (EP);
H01L21/0262 (EP);
H01L21/02631 (EP);
H01L21/3003 (EP);
H01L31/202 (EP);
H01L31/204 (EP);
Y02P70/50 (EP)
(-)
| Designated contracting states | DE, FR [1998/16] |
Former [1991/02] | DE, FR, GB, IT | Title | German: | Verfahren zur Herstellung einer amorphen Halbleiterschicht | [1998/19] | English: | Method of forming an amorphous semiconductor film | [1998/19] | French: | Méthode de production d'un film semiconducteur amorphe | [1998/19] |
Former [1991/02] | Amorphe Halbleiterschicht und Verfahren zu deren Herstellung | ||
Former [1991/02] | Amorphous semiconductor film and process for its production | ||
Former [1991/02] | Film semiconducteur amorphe et sa méthode de production | Examination procedure | 28.12.1990 | Examination requested [1991/10] | 02.06.1993 | Despatch of a communication from the examining division (Time limit: M06) | 13.12.1993 | Reply to a communication from the examining division | 21.01.1994 | Despatch of a communication from the examining division (Time limit: M06) | 29.07.1994 | Reply to a communication from the examining division | 30.08.1994 | Despatch of a communication from the examining division (Time limit: M06) | 09.03.1995 | Reply to a communication from the examining division | 30.01.1997 | Despatch of a communication from the examining division (Time limit: M02) | 13.02.1997 | Reply to a communication from the examining division | 28.07.1997 | Despatch of communication of intention to grant (Approval: No) | 01.10.1997 | Despatch of communication of intention to grant (Approval: later approval) | 08.10.1997 | Communication of intention to grant the patent | 30.12.1997 | Fee for grant paid | 30.12.1997 | Fee for publishing/printing paid | Opposition(s) | 09.02.1999 | No opposition filed within time limit [1999/17] | Fees paid | Renewal fee | 23.06.1992 | Renewal fee patent year 03 | 23.06.1993 | Renewal fee patent year 04 | 22.06.1994 | Renewal fee patent year 05 | 02.05.1995 | Renewal fee patent year 06 | 21.06.1996 | Renewal fee patent year 07 | 23.06.1997 | Renewal fee patent year 08 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [AD]JP63014420 ; | [A]DE3208086 (DEUTSCHE FORSCH LUFT RAUMFAHRT [DE]) | [Y] - JOURNAL OF APPLIED PHYSICS vol. 65, no. 6, 15 March 1989, pages 2439 - 2444, New York, US; A. ASANO et al.: "Preparation of highly photoconductive hydrogenated amorphous silicon carbide films with a multiplasme-zone apparatus" | [Y] - THIN SOLID FILMS vol. 171, no. 1, 1 April 1989, pages 217 - 233, Lausanne, CH; M. PINARBASI et al.: "Hydrogenated amorphous silicon films deposited by reactive sputtering: The electronic properties hydrogen bonding and microstructure" | [AD] - PATENT ABSTRACTS OF JAPAN vol. 12, no.217 (E-624), 21 June 1988; & JP-A-63 014 420 (HITACHI) 21.01.1988, & JP63014420 A 19880621 | [A] - SOLAR & WIND TECHNOLOGY vol. 6, no. 3, 1989, pages 241 - 246, Den Haag, NL; Y. HAMAKAWA: "Physics and Technologies of Efficiency Improvements for Amorphous Silicon Solar Cells" | [A] - THIN SOLID FILMS vol. 147, no. 2, 2 March 1987, pages 213 - 222, Lausanne, CH; K.P. CHICK et al.: "A comparative study of the properties of evaporated a-Si films before and after hydrogenation" | [A] - SOLAR CELLS vol. 24, nos. 3/4, August 1988, pages 249 - 256, Lausanne, CH; Y.S. TSUO et al.: "Ion-beam hydrogenation of amorphous silicon" | [A] - SOLAR ENERGY MATERIALS vol. 17, no. 4, June 1988, pages 237 - 245, Amsterdam, NL; G. GANGULY et al.: "A study of the optoelectronic and structural properties of glow-discharge-deposited amorphous silicon thin films" | [A] - PHYSICAL REVIEW, B. CONDENSED MATTER vol. 31, no. 8, 15 April 1985, pages 5311 - 5321, New York, US; M. JANAI et al.: "Properties of fluorinated glow-discharge amorphous silicon" | [A] - SOLAR CELLS vol. 24, nos. 3/4, August 1988, pages 237 - 248, Lausanne, CH; R.S. CRANDALL: "Fundamental studies of amorphous silicon materials at the solar energy research institute" |