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EP About this file: EP0407088

EP0407088 - Method of forming an amorphous semiconductor film [Right-click to bookmark this link]
Former [1991/02]	Amorphous semiconductor film and process for its production
	[1998/19]
Status	No opposition filed within time limit Status updated on 12.03.1999 Database last updated on 24.08.2024
Most recent event Tooltip	25.07.2008	Change - representative	published on 27.08.2008 [2008/35]
Applicant(s)	For all designated states Mitsui Chemicals, Inc. 2-5, Kasumigaseki 3-chome, Chiyoda-ku Tokyo 100-6070 / JP
	[N/P]
Former [1998/18]	For all designated states Mitsui Chemicals, Inc. 2-5, Kasumigaseki 3-chome, Chiyoda-ku Tokyo 100-6070 / JP
Former [1992/23]	For all designated states MITSUI TOATSU CHEMICALS, Inc. 2-5 Kasumigaseki 3-chome Chiyoda-Ku Tokyo 100 / JP
Former [1991/02]	For all designated states MITSUI TOATSU CHEMICALS, INCORPORATED 2-5, 3-chome, Kasumigaseki Chiyoda-ku Tokyo / JP
Inventor(s)	01 / Miyachi, Kenji 2882, Iijima-cho, Sakae-ku Yokohama-shi, Kanagawa-ken / JP
	02 / Fukuda, Nobuhiro 2882, Iijima-cho, Sakae-ku Yokohama-shi, Kanagawa-ken / JP
	03 / Ashida, Yoshinori 1541 Yabe-cho, Totsuka-ku Yokohama-shi, Kanagawa-ken / JP
	04 / Koyama, Masato 4-1-28 Hase Kamakura-shi, Kanagawa-ken / JP
	[1991/02]
Representative(s)	Stuart, Ian Alexander, et al Mewburn Ellis LLP City Tower 40 Basinghall Street London EC2V 5DE / GB
	[N/P]
Former [2008/35]	Stuart, Ian Alexander, et al Mewburn Ellis LLP York House 23 Kingsway London WC2B 6HP / GB
Former [1991/02]	Stuart, Ian Alexander, et al MEWBURN ELLIS York House 23 Kingsway London WC2B 6HP / GB
Application number, filing date	90307023.3	27.06.1990
	[1991/02]
Priority number, date	JP19890163710	28.06.1989 Original published format: JP 16371089
	JP19890165402	29.06.1989 Original published format: JP 16540289
	JP19890165403	29.06.1989 Original published format: JP 16540389
	JP19890199258	02.08.1989 Original published format: JP 19925889
	JP19890199259	02.08.1989 Original published format: JP 19925989
	JP19890199260	02.08.1989 Original published format: JP 19926089
	JP19890200234	03.08.1989 Original published format: JP 20023489
	JP19900011803	23.01.1990 Original published format: JP 1180390
	[1991/02]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	EP0407088
	Date:	09.01.1991
	Language:	EN
	[1991/02]
	Type:	B1 Patent specification
	No.:	EP0407088
	Date:	06.05.1998
	Language:	EN
	[1998/19]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	26.09.1990
Classification	IPC:	H01L31/20, C23C16/22, C23C14/12	[1991/02]
	CPC:	C23C14/0682 (EP,US); C23C14/58 (EP); C23C14/5826 (EP,US); C23C14/5846 (EP); C23C16/56 (EP); H01L21/02381 (EP); (+) H01L21/0242 (EP); H01L21/02529 (EP); H01L21/02532 (EP); H01L21/02535 (EP); H01L21/0262 (EP); H01L21/02631 (EP); H01L21/3003 (EP); H01L31/202 (EP); H01L31/204 (EP); Y02P70/50 (EP) (-)
Designated contracting states	DE, FR [1998/16]
Former [1991/02]	DE, FR, GB, IT
Title	German:	Verfahren zur Herstellung einer amorphen Halbleiterschicht	[1998/19]
	English:	Method of forming an amorphous semiconductor film	[1998/19]
	French:	Méthode de production d'un film semiconducteur amorphe	[1998/19]
	Former [1991/02]	Amorphe Halbleiterschicht und Verfahren zu deren Herstellung
	Former [1991/02]	Amorphous semiconductor film and process for its production
	Former [1991/02]	Film semiconducteur amorphe et sa méthode de production
Examination procedure	28.12.1990	Examination requested [1991/10]
	02.06.1993	Despatch of a communication from the examining division (Time limit: M06)
	13.12.1993	Reply to a communication from the examining division
	21.01.1994	Despatch of a communication from the examining division (Time limit: M06)
	29.07.1994	Reply to a communication from the examining division
	30.08.1994	Despatch of a communication from the examining division (Time limit: M06)
	09.03.1995	Reply to a communication from the examining division
	30.01.1997	Despatch of a communication from the examining division (Time limit: M02)
	13.02.1997	Reply to a communication from the examining division
	28.07.1997	Despatch of communication of intention to grant (Approval: No)
	01.10.1997	Despatch of communication of intention to grant (Approval: later approval)
	08.10.1997	Communication of intention to grant the patent
	30.12.1997	Fee for grant paid
	30.12.1997	Fee for publishing/printing paid
Opposition(s)	09.02.1999	No opposition filed within time limit [1999/17]
Fees paid	Renewal fee
	23.06.1992	Renewal fee patent year 03
	23.06.1993	Renewal fee patent year 04
	22.06.1994	Renewal fee patent year 05
	02.05.1995	Renewal fee patent year 06
	21.06.1996	Renewal fee patent year 07
	23.06.1997	Renewal fee patent year 08
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[AD]JP63014420 ;
		[A]DE3208086 (DEUTSCHE FORSCH LUFT RAUMFAHRT [DE])
		[Y] - JOURNAL OF APPLIED PHYSICS vol. 65, no. 6, 15 March 1989, pages 2439 - 2444, New York, US; A. ASANO et al.: "Preparation of highly photoconductive hydrogenated amorphous silicon carbide films with a multiplasme-zone apparatus"
		[Y] - THIN SOLID FILMS vol. 171, no. 1, 1 April 1989, pages 217 - 233, Lausanne, CH; M. PINARBASI et al.: "Hydrogenated amorphous silicon films deposited by reactive sputtering: The electronic properties hydrogen bonding and microstructure"
		[AD] - PATENT ABSTRACTS OF JAPAN vol. 12, no.217 (E-624), 21 June 1988; & JP-A-63 014 420 (HITACHI) 21.01.1988, & JP63014420 A 19880621
		[A] - SOLAR & WIND TECHNOLOGY vol. 6, no. 3, 1989, pages 241 - 246, Den Haag, NL; Y. HAMAKAWA: "Physics and Technologies of Efficiency Improvements for Amorphous Silicon Solar Cells"
		[A] - THIN SOLID FILMS vol. 147, no. 2, 2 March 1987, pages 213 - 222, Lausanne, CH; K.P. CHICK et al.: "A comparative study of the properties of evaporated a-Si films before and after hydrogenation"
		[A] - SOLAR CELLS vol. 24, nos. 3/4, August 1988, pages 249 - 256, Lausanne, CH; Y.S. TSUO et al.: "Ion-beam hydrogenation of amorphous silicon"
		[A] - SOLAR ENERGY MATERIALS vol. 17, no. 4, June 1988, pages 237 - 245, Amsterdam, NL; G. GANGULY et al.: "A study of the optoelectronic and structural properties of glow-discharge-deposited amorphous silicon thin films"
		[A] - PHYSICAL REVIEW, B. CONDENSED MATTER vol. 31, no. 8, 15 April 1985, pages 5311 - 5321, New York, US; M. JANAI et al.: "Properties of fluorinated glow-discharge amorphous silicon"
		[A] - SOLAR CELLS vol. 24, nos. 3/4, August 1988, pages 237 - 248, Lausanne, CH; R.S. CRANDALL: "Fundamental studies of amorphous silicon materials at the solar energy research institute"

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