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EP0410799
European procedure
Extract from the Register of European Patents
EP About this file: EP0410799
| EP0410799 - High voltage thin film transistor with second control electrode [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 09.02.1996 Database last updated on 31.08.2024 | Most recent event Tooltip | 09.02.1996 | No opposition filed within time limit | published on 27.03.1996 [1996/13] | Applicant(s) | For all designated states Xerox Corporation Xerox Square - 020 Rochester New York 14644 / US | [N/P] |
| Former [1991/05] | For all designated states XEROX CORPORATION Xerox Square - 020 Rochester New York 14644 / US | Inventor(s) | 01 /
Hack, Michael 400 Del Medio 5, Mountain View, California 94040 / US | 02 /
Shaw, John G. 127 Ramona road Portola Valley, California 94028 / US | [1991/05] | Representative(s) | Hill, Cecilia Ann, et al Rank Xerox Ltd Patent Department Parkway Marlow Buckinghamshire SL7 1YL / GB | [N/P] |
| Former [1991/05] | Hill, Cecilia Ann, et al Rank Xerox Ltd Patent Department Parkway Marlow Buckinghamshire SL7 1YL / GB | Application number, filing date | 90308286.5 | 27.07.1990 | [1991/05] | Priority number, date | US19890387324 | 28.07.1989 Original published format: US 387324 | [1991/05] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0410799 | Date: | 30.01.1991 | Language: | EN | [1991/05] | Type: | A3 Search report | No.: | EP0410799 | Date: | 06.02.1991 | Language: | EN | [1991/06] | Type: | B1 Patent specification | No.: | EP0410799 | Date: | 05.04.1995 | Language: | EN | [1995/14] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 20.12.1990 | Classification | IPC: | H01L29/772 | [1995/14] | CPC: |
H01L29/78648 (EP,US);
H01L29/78624 (EP,US);
H01L29/78645 (EP,US);
H01L29/78663 (EP,US)
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| Former IPC [1991/05] | H01L29/784 | Designated contracting states | DE, FR, GB [1991/05] | Title | German: | Hochspannungsdünnschichttransistor mit einer zweiten Kontrollelektrode | [1991/05] | English: | High voltage thin film transistor with second control electrode | [1991/05] | French: | Transistor haute tension en couche mince avec une seconde électrode de contrôle | [1991/05] | Examination procedure | 02.08.1991 | Examination requested [1991/39] | 28.03.1994 | Despatch of communication of intention to grant (Approval: Yes) | 16.08.1994 | Communication of intention to grant the patent | 07.09.1994 | Fee for grant paid | 07.09.1994 | Fee for publishing/printing paid | Opposition(s) | 06.01.1996 | No opposition filed within time limit [1996/13] | Fees paid | Renewal fee | 09.06.1992 | Renewal fee patent year 03 | 24.06.1993 | Renewal fee patent year 04 | 23.06.1994 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [AD]EP0156528 (XEROX CORP [US]) | [A] - INTERNATIONAL ELECTRON DEVICES MEETING 1988. SAN FRANCISCO, CA. DECEMBER 11-14,1988. pages 252 - 255; M. Hack et al: "HIGH-VOLTAGE THIN FILM TRANSISTORS FOR LARGE AREA MICROELECTRONICS" | [A] - IEEE ELECTRON DEVICE LETTERS. vol. EDL-3, no. 12, December 1982, NEW YORK US pages 357 - 359; H. C. TUAN et al: "Dual-Gate a-Si:H Thin Film_Transistors" | [A] - PROCEEDINGS OF THE IEEE. vol. 55, no. 7, July 1967, NEW YORK US pages 1217 - 1218; R. G. Wagner et al: "A Dual Offset Gate Thin-Film Transistor" |