EP0414499 - Semiconductor structure with closely coupled substrate temperature sense element [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 20.03.1992 Database last updated on 02.11.2024 | Most recent event Tooltip | 20.03.1992 | Withdrawal of application | published on 13.05.1992 [1992/20] | Applicant(s) | For all designated states MOTOROLA, INC. 1303 East Algonquin Road Schaumburg, IL 60196 / US | [1991/09] | Inventor(s) | 01 /
Fay, Gary V. 7102 E. Paradise Drive Scottsdale, Arizona 85254 / US | 02 /
Sutor, Judith L. 2306 Bull Moose Drive Chandler, Arizona 85224 / US | 03 /
Robb, Stephen P. 211 W. Greentree Drive Tempe, Arizona 85284 / US | 04 /
Terry, Lewis E. 4812 E. Mitchell Drive Phoenix, Arizona 85018 / US | [1991/09] | Representative(s) | Dunlop, Hugh Christopher, et al Motorola European Intellectual Property Operations Midpoint Alencon Link Basingstoke, Hampshire RG21 7PL / GB | [N/P] |
Former [1991/09] | Dunlop, Hugh Christopher, et al Motorola, European Intellectual Property, Midpoint, Alencon Link Basingstoke, Hampshire RG21 7PL / GB | Application number, filing date | 90309163.5 | 21.08.1990 | [1991/09] | Priority number, date | US19890397052 | 22.08.1989 Original published format: US 397052 | [1991/09] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0414499 | Date: | 27.02.1991 | Language: | EN | [1991/09] | Type: | A3 Search report | No.: | EP0414499 | Date: | 31.07.1991 | Language: | EN | [1991/31] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 13.06.1991 | Classification | IPC: | H01L27/02 | [1991/09] | CPC: |
H01L29/7808 (EP,US);
H01L27/02 (KR);
H01L27/0248 (EP,US);
H01L27/0255 (EP,US);
H01L29/7803 (EP,US);
H01L29/7804 (EP,US)
| Designated contracting states | DE, FR, GB, IT [1991/09] | Title | German: | Halbleiterstruktur mit einem Temperatursensorelement, das eng mit dem Substrat gekoppelt ist | [1991/09] | English: | Semiconductor structure with closely coupled substrate temperature sense element | [1991/09] | French: | Structure semi-conductrice comportant un élément senseur de la température, étroitement couplé au substrat | [1991/09] | File destroyed: | 12.06.1999 | Examination procedure | 31.01.1992 | Examination requested [1992/14] | 16.03.1992 | Application withdrawn by applicant [1992/20] |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP5950559 ; | [A]JP58159370 ; | [A]FR2145460 (RCA CORP) | [YD] - IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE June 1987, VIRGINIA, USA pages 31 - 36; Y. TSUZUKI et al.: "SELF-THERMAL PROTECTING POWER MOSFETs" | [Y] - JAPANESE JOURNAL OF APPLIED PHYSICS, SUPPLEMENTS. vol. 22, no. 22-1, 1983, TOKYO JA pages 81 - 84; I. YOSHIDA et al.: "NOVEL GATE-PROTECTION DEVICES FOR MOSFETs" | [A] - PATENT ABSTRACTS OF JAPAN vol. 8, no. 139 (E-253)(1576) 28 June 1984, & JP-A-59 50559 (HITACHI) 23 March 1984,, & JP5950559 A 19840323 | [A] - PATENT ABSTRACTS OF JAPAN vol. 7, no. 280 (E-216)(1425) 14 December 1983, & JP-A-58 159370 (NIPPON DENKI) 21 September 1983,, & JP58159370 A 19830921 |