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Extract from the Register of European Patents

EP About this file: EP0414499

EP0414499 - Semiconductor structure with closely coupled substrate temperature sense element [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  20.03.1992
Database last updated on 02.11.2024
Most recent event   Tooltip20.03.1992Withdrawal of applicationpublished on 13.05.1992 [1992/20]
Applicant(s)For all designated states
MOTOROLA, INC.
1303 East Algonquin Road
Schaumburg, IL 60196 / US
[1991/09]
Inventor(s)01 / Fay, Gary V.
7102 E. Paradise Drive
Scottsdale, Arizona 85254 / US
02 / Sutor, Judith L.
2306 Bull Moose Drive
Chandler, Arizona 85224 / US
03 / Robb, Stephen P.
211 W. Greentree Drive
Tempe, Arizona 85284 / US
04 / Terry, Lewis E.
4812 E. Mitchell Drive
Phoenix, Arizona 85018 / US
[1991/09]
Representative(s)Dunlop, Hugh Christopher, et al
Motorola
European Intellectual Property Operations
Midpoint
Alencon Link
Basingstoke, Hampshire RG21 7PL / GB
[N/P]
Former [1991/09]Dunlop, Hugh Christopher, et al
Motorola, European Intellectual Property, Midpoint, Alencon Link
Basingstoke, Hampshire RG21 7PL / GB
Application number, filing date90309163.521.08.1990
[1991/09]
Priority number, dateUS1989039705222.08.1989         Original published format: US 397052
[1991/09]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0414499
Date:27.02.1991
Language:EN
[1991/09]
Type: A3 Search report 
No.:EP0414499
Date:31.07.1991
Language:EN
[1991/31]
Search report(s)(Supplementary) European search report - dispatched on:EP13.06.1991
ClassificationIPC:H01L27/02
[1991/09]
CPC:
H01L29/7808 (EP,US); H01L27/02 (KR); H01L27/0248 (EP,US);
H01L27/0255 (EP,US); H01L29/7803 (EP,US); H01L29/7804 (EP,US)
Designated contracting statesDE,   FR,   GB,   IT [1991/09]
TitleGerman:Halbleiterstruktur mit einem Temperatursensorelement, das eng mit dem Substrat gekoppelt ist[1991/09]
English:Semiconductor structure with closely coupled substrate temperature sense element[1991/09]
French:Structure semi-conductrice comportant un élément senseur de la température, étroitement couplé au substrat[1991/09]
File destroyed:12.06.1999
Examination procedure31.01.1992Examination requested  [1992/14]
16.03.1992Application withdrawn by applicant  [1992/20]
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Documents cited:Search[A]JP5950559  ;
 [A]JP58159370  ;
 [A]FR2145460  (RCA CORP)
 [YD]  - IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE June 1987, VIRGINIA, USA pages 31 - 36; Y. TSUZUKI et al.: "SELF-THERMAL PROTECTING POWER MOSFETs"
 [Y]  - JAPANESE JOURNAL OF APPLIED PHYSICS, SUPPLEMENTS. vol. 22, no. 22-1, 1983, TOKYO JA pages 81 - 84; I. YOSHIDA et al.: "NOVEL GATE-PROTECTION DEVICES FOR MOSFETs"
 [A]  - PATENT ABSTRACTS OF JAPAN vol. 8, no. 139 (E-253)(1576) 28 June 1984, & JP-A-59 50559 (HITACHI) 23 March 1984,, & JP5950559 A 19840323
 [A]  - PATENT ABSTRACTS OF JAPAN vol. 7, no. 280 (E-216)(1425) 14 December 1983, & JP-A-58 159370 (NIPPON DENKI) 21 September 1983,, & JP58159370 A 19830921
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.