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EP0419160
European procedure
Extract from the Register of European Patents
EP About this file: EP0419160
| EP0419160 - Amorphous silicon semiconductor devices [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 11.10.1996 Database last updated on 02.11.2024 | Most recent event Tooltip | 11.10.1996 | No opposition filed within time limit | published on 27.11.1996 [1996/48] | Applicant(s) | For all designated states GENERAL ELECTRIC COMPANY 1 River Road Schenectady, NY 12345 / US | [N/P] |
| Former [1991/13] | For all designated states GENERAL ELECTRIC COMPANY 1 River Road Schenectady, NY 12345 / US | Inventor(s) | 01 /
Possin, George Edward 2361 Algonquin Road Schenectady, New York 12309 / US | 02 /
Garverick, Linda Mason 1311 Ruffner Road Niskayuna, New York 12309 / US | [1991/13] | Representative(s) | Szary, Anne Catherine, et al GPO Europe GE International Inc. The Ark 201 Talgarth Road Hammersmith London W6 8BJ / GB | [N/P] |
| Former [1996/12] | Szary, Anne Catherine, et al London Patent Operation, GE Technical Services Co. Inc., Essex House, 12-13 Essex Street London WC2R 3AA / GB | ||
| Former [1995/27] | Greenwood, John David, et al London Patent Operation, General Electric Technical Services Company, Inc., Essex House, 12/13 Essex Street London WC2R 3AA / GB | ||
| Former [1991/13] | Pratt, Richard Wilson London Patent Operation G.E. Technical Services Co. Inc. Essex House 12/13 Essex Street London WC2R 3AA / GB | Application number, filing date | 90310114.5 | 17.09.1990 | [1991/13] | Priority number, date | US19890408979 | 18.09.1989 Original published format: US 408979 | US19900552977 | 16.07.1990 Original published format: US 552977 | [1991/13] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0419160 | Date: | 27.03.1991 | Language: | EN | [1991/13] | Type: | B1 Patent specification | No.: | EP0419160 | Date: | 06.12.1995 | Language: | EN | [1995/49] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 04.01.1991 | Classification | IPC: | H01L29/786 | [1995/49] | CPC: |
H01L29/4908 (EP,US);
H01L29/786 (KR);
G02F1/133 (KR);
G02F1/1368 (EP,US);
H01L29/66765 (EP,US);
G02F2202/103 (EP,US)
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| Former IPC [1991/13] | H01L29/784 | Designated contracting states | DE, FR, GB, NL [1991/13] | Title | German: | Halbleiteranordnung aus amorphem Silizium | [1991/13] | English: | Amorphous silicon semiconductor devices | [1991/13] | French: | Dispositifs semi-conducteur en silicium amorphe | [1991/13] | Examination procedure | 05.09.1991 | Examination requested [1991/45] | 22.06.1993 | Despatch of a communication from the examining division (Time limit: M04) | 21.10.1993 | Reply to a communication from the examining division | 24.02.1995 | Despatch of communication of intention to grant (Approval: Yes) | 23.05.1995 | Communication of intention to grant the patent | 04.09.1995 | Fee for grant paid | 04.09.1995 | Fee for publishing/printing paid | Opposition(s) | 07.09.1996 | No opposition filed within time limit [1996/48] | Fees paid | Renewal fee | 17.09.1992 | Renewal fee patent year 03 | 16.09.1993 | Renewal fee patent year 04 | 30.09.1994 | Renewal fee patent year 05 | 02.10.1995 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP6086863 ; | [Y]EP0145403 (ENERGY CONVERSION DEVICES INC [US]); | [Y]US4816885 (YOSHIDA MAMORU [JP], et al) | [X] - APPLIED PHYSICS LETTERS. vol. 54, no. 21, 22 May 1989, NEW YORK US pages 2079 - 2081; JIN JANG et al: "Amorphous silicon thin-film transistors with two-layer gate insulator" | [A] - EXTENDED ABSTRACTS. no. 2, October 1985, PRINCETON, NEW JERSE page 305 R. Hezel and W. Bauch: "CHARGE STORAGE PROPERTIES OF PLASMA-DEPOSITED SILICON NITRIDE FILMS AND THE EFFECT OF INTERFACE STATES" | [A] - PATENT ABSTRACTS OF JAPAN vol. 9, no. 230 (E-343)(1953) 17 September 1985, & JP-A-60 86863 (FUJITSU K.K.) 16 May 1985,, & JP6086863 A 19850516 |