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EP0430691
European procedure
Extract from the Register of European Patents
EP Citations: EP0430691
| Cited in | Search | Type: | Patent literature | Publication No.: | JP1020690
[A] ; | Type: | Patent literature | Publication No.: | EP0322847
[A] (CANON KK [JP]) | Type: | Non-patent literature | Publication information: | [A] - IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 35, no. 12, December 1988, pages 2456-2457, New York, US; R.L. THORNTON et al.: "Unified planar process for fabricating heterojunction bipolar transistors and buried heterostructure lasers utilizing impurity-induced disordering" | Type: | Non-patent literature | Publication information: | [AD] - IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 36, no. 10, October 1989, pages 2156-2164, New York, US; R.L. THORNTON et al.: "Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flow" | Type: | Non-patent literature | Publication information: | [A] - ELECTRONICS LETTERS, vol. 24, no. 2, 21st January 1988, pages 97-99, Stevenage, Herts, GB; F. BRILLOUET et al.: "New low capacitance transverse junction stripe AlGaAs/GaAs laser for planar laser-MESFET integration" | Type: | Non-patent literature | Publication information: | [A] - APPLIED PHYSICS LETTERS, vol. 50, no. 25, 22nd June 1987, pages 1788-1790, New York, US; K. MITSUNAGA et al.: "CW surface-emitting grating-coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence" | Type: | Non-patent literature | Publication information: | [A] - PATENT ABSTRACTS OF JAPAN, vol. 13, no. 198 (E-756), 11th May 1989; & JP-A-1 020 690 (MITSUBISHI ELECTRIC CORP.) 24-01-1989, & JP1020690 A 00000000 | Type: | Non-patent literature | Publication information: | [AP] - APPLIED PHYSICS LETTERS, vol. 56, no. 17, 23rd April 1990, pages 1670-1672, New York, US; R.L. THORNTON et al.: "Achievement of high gain in a multiple quantum channel lateral heterojunction bipolar transistor" |