EP0465515 - PROCESS AND DEVICE FOR MONITORING ION ASSISTED MACHINING PROCESSES ON WAFERS [Right-click to bookmark this link] | |||
Former [1992/03] | PROCESS AND DEVICE FOR MONITORING ASSISTED ION MACHINING PROCESSES ON WAFERS | ||
[1996/33] | Status | No opposition filed within time limit Status updated on 20.06.1997 Database last updated on 29.10.2024 | Most recent event Tooltip | 20.06.1997 | No opposition filed within time limit | published on 06.08.1997 [1997/32] | Applicant(s) | For all designated states Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Leonrodstrasse 54 80636 München / DE | [N/P] |
Former [1992/03] | For all designated states FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. Leonrodstrasse 54 D-80636 München / DE | Inventor(s) | 01 /
HEINRICH, Friedhelm Rheingaustr. 25 D-1000 Berlin 41 / DE | [1992/03] | Representative(s) | Münich, Wilhelm, et al Dr. Münich & Kollegen Anwaltskanzlei Wilhelm-Mayr-Strasse 11 80689 München / DE | [N/P] |
Former [1994/08] | Münich, Wilhelm, Dr., et al Kanzlei Münich, Steinmann, Schiller Wilhelm-Mayr-Str. 11 D-80689 München / DE | ||
Former [1992/03] | Münich, Wilhelm, Dr. Kanzlei Münich, Steinmann, Schiller Wilhelm-Mayr-Str. 11 D-80689 München / DE | Application number, filing date | 90905183.1 | 31.03.1990 | [1992/03] | WO1990DE00255 | Priority number, date | DE19893910491 | 31.03.1989 Original published format: DE 3910491 | [1992/03] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | WO9012415 | Date: | 18.10.1990 | Language: | DE | [1990/24] | Type: | A1 Application with search report | No.: | EP0465515 | Date: | 15.01.1992 | Language: | DE | The application published by WIPO in one of the EPO official languages on 18.10.1990 takes the place of the publication of the European patent application. | [1992/03] | Type: | B1 Patent specification | No.: | EP0465515 | Date: | 14.08.1996 | Language: | DE | [1996/33] | Search report(s) | International search report - published on: | EP | 18.10.1990 | Classification | IPC: | H01J37/32, H01J37/304, G01N21/62, H01J37/305 | [1992/03] | CPC: |
H01J37/32935 (EP,US)
| Designated contracting states | AT, BE, CH, DE, FR, GB, IT, LI, LU, NL, SE [1992/09] |
Former [1992/03] | AT, BE, CH, DE, DK, ES, FR, GB, IT, LI, LU, NL, SE | Title | German: | VERFAHREN ZUR ÜBERWACHUNG VON IONEN-UNTERSTÜTZTEN BEARBEITUNGSVORGÄNGEN AN WAFERN UND VORRICHTUNG ZUR DURCHFÜHRUNG DES VERFAHRENS | [1992/03] | English: | PROCESS AND DEVICE FOR MONITORING ION ASSISTED MACHINING PROCESSES ON WAFERS | [1996/33] | French: | PROCEDE ET DISPOSITIF POUR CONTROLER DES PROCESSUS D'USINAGE ASSISTES PAR VOIE IONIQUE SUR DES TRANCHES | [1992/03] |
Former [1992/03] | PROCESS AND DEVICE FOR MONITORING ASSISTED ION MACHINING PROCESSES ON WAFERS | Entry into regional phase | 11.09.1991 | National basic fee paid | 11.09.1991 | Designation fee(s) paid | 11.09.1991 | Examination fee paid | Examination procedure | 01.06.1990 | Loss of particular rights, legal effect: designated state(s) | 03.08.1990 | Request for preliminary examination filed International Preliminary Examining Authority: DE | 11.09.1991 | Examination requested [1992/03] | 01.04.1992 | Despatch of communication of loss of particular rights: designated state(s) DK | 01.04.1992 | Despatch of communication of loss of particular rights: designated state(s) ES | 01.06.1992 | Loss of particular rights, legal effect: designated state(s) | 29.12.1993 | Despatch of a communication from the examining division (Time limit: M04) | 03.05.1994 | Reply to a communication from the examining division | 14.06.1994 | Despatch of a communication from the examining division (Time limit: M06) | 30.01.1995 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time | 08.03.1995 | Reply to a communication from the examining division | 25.04.1995 | Despatch of a communication from the examining division (Time limit: M02) | 20.05.1995 | Reply to a communication from the examining division | 29.06.1995 | Despatch of communication of intention to grant (Approval: Yes) | 13.10.1995 | Communication of intention to grant the patent | 27.11.1995 | Fee for grant paid | 27.11.1995 | Fee for publishing/printing paid | Opposition(s) | 15.05.1997 | No opposition filed within time limit [1997/32] | Request for further processing for: | 08.03.1995 | Request for further processing filed | 08.03.1995 | Full payment received (date of receipt of payment) Request granted | 28.03.1995 | Decision despatched | Fees paid | Renewal fee | 31.03.1992 | Renewal fee patent year 03 | 31.03.1993 | Renewal fee patent year 04 | 31.03.1994 | Renewal fee patent year 05 | 31.03.1995 | Renewal fee patent year 06 | 26.03.1996 | Renewal fee patent year 07 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 10.01.1992 | DK   M01   Not yet paid | 10.01.1992 | ES   M01   Not yet paid |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | SE | 14.11.1996 | [1997/18] | Cited in | International search | [XP] - APPLIED PHYSICS LETTERS. vol. 55, no. 14, 02 Oktober 1989, NEW YORK US Seiten 1474 - 1476; Heinrich et al.: "New and simple optical method for in-situ etch rate determination and endpoint detection" siehe das ganze Dokument | [Y] - REVIEW OF SCIENTIFIC INSTRUMENTS. vol. 51, no. 11, November 1980, NEW YORK US Seiten 1451 - 1462; Burrell et al.: "Doppler shift spectroscopy of powerful neutral beams" siehe Zusammenfassung siehe Seite 1453, linke Spalte, Absatz 2-Ende rechter Spalte | [Y] - JOURNAL OF APPLIED PHYSICS. vol. 53, no. 6, Juni 1982, NEW YORK US Seiten 4389 - 4394; Dzioba et al.: "Optical spectroscopy during reactive ion beam etching of Si and Al targets" siehe Seiten 4389 - 4390 | [A] - JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B. vol. 3, no. 5, September 1985, NEW YORK US Seiten 1543 - 1545; Husinsky et al.: "Doppler shift laser fluorescence spectroscopy of sputtered and evaporatedatoms under Ar+ bombardment" siehe das ganze Dokument |