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EP0440139
European procedure
Extract from the Register of European Patents
EP About this file: EP0440139
| EP0440139 - Hot electron transistor [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 19.10.1995 Database last updated on 06.11.2024 | Most recent event Tooltip | 19.10.1995 | No opposition filed within time limit | published on 06.12.1995 [1995/49] | Applicant(s) | For all designated states Sony Corporation 7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 / JP | [N/P] |
| Former [1991/32] | For all designated states SONY CORPORATION 7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo 141 / JP | Inventor(s) | 01 /
Taira, Kenichi c/o Sony Corporation 7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo / JP | 02 /
Hase, Ichiro c/o Sony Corporation 7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo / JP | 03 /
Kawai, Hiroji c/o Sony Corporation 7-35 Kitashinagawa 6-chome Shinagawa-ku Tokyo / JP | [1991/32] | Representative(s) | Schmidt-Evers, Jürgen, et al Mitscherlich PartmbB Patent- und Rechtsanwälte Postfach 33 06 09 80066 München / DE | [N/P] |
| Former [1993/19] | Schmidt-Evers, Jürgen, Dipl.-Ing., et al Patentanwälte Mitscherlich & Partner Postfach 33 06 09 D-80066 München / DE | ||
| Former [1991/32] | Schmidt-Evers, Jürgen, Dipl.-Ing. Patentanwälte Mitscherlich & Partner, Sonnenstrasse 33, Postfach 33 06 09 D-80066 München / DE | Application number, filing date | 91101080.9 | 28.01.1991 | [1991/32] | Priority number, date | JP19900018707 | 29.01.1990 Original published format: JP 1870790 | [1991/32] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0440139 | Date: | 07.08.1991 | Language: | EN | [1991/32] | Type: | B1 Patent specification | No.: | EP0440139 | Date: | 14.12.1994 | Language: | EN | [1994/50] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 27.05.1991 | Classification | IPC: | H01L29/76 | [1991/32] | CPC: |
H01L29/66931 (EP,US);
H01L29/7606 (EP,US)
| Designated contracting states | DE, FR, GB [1991/32] | Title | German: | Heisse-Elektronen-Transistor | [1991/32] | English: | Hot electron transistor | [1991/32] | French: | Transistor à électrons chauds | [1991/32] | Examination procedure | 06.02.1992 | Examination requested [1992/15] | 10.05.1993 | Despatch of a communication from the examining division (Time limit: M06) | 04.11.1993 | Reply to a communication from the examining division | 24.02.1994 | Despatch of communication of intention to grant (Approval: Yes) | 16.06.1994 | Communication of intention to grant the patent | 05.09.1994 | Fee for grant paid | 05.09.1994 | Fee for publishing/printing paid | Opposition(s) | 15.09.1995 | No opposition filed within time limit [1995/49] | Fees paid | Renewal fee | 29.01.1993 | Renewal fee patent year 03 | 31.01.1994 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]JP63229752 ; | [Y]EP0299686 (AMERICAN TELEPHONE & TELEGRAPH [US]) | [X] - PATENT ABSTRACTS OF JAPAN vol. 13, no. 26 (E-706)(3374), 20 January 1989; & JP - A - 63229752 (FUJITSU) 26.09.1988, & JP63229752 A 19890120 | Examination | EP0159273 |