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Extract from the Register of European Patents

EP About this file: EP0453998

EP0453998 - Semiconductor memory device having a bit line constituted by a semiconductor layer [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  08.05.1998
Database last updated on 27.07.2024
Most recent event   Tooltip21.06.2002Lapse of the patent in a contracting statepublished on 07.08.2002  [2002/32]
Applicant(s)For all designated states
Kabushiki Kaisha Toshiba
72, Horikawa-cho, Saiwai-ku Kawasaki-shi
Kanagawa-ken 210-8572 / JP
[N/P]
Former [1995/01]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP
Former [1991/44]For all designated states
Kabushiki Kaisha Toshiba
72, Horikawa-cho Saiwai-ku
Kawasaki-shi / JP
Inventor(s)01 / Kumagai, Jumpei, c/o Intellectual Property Div.
K.K. TOSHIBA, 1-1 Shibaura 1-chome
Minato-ku, Tokyo 105 / JP
02 / Sawada, Shizuo, c/o Intellectual Property Div.
K.K. TOSHIBA, 1-1 Shibaura 1-chome
Minato-ku, Tokyo 105 / JP
[1991/44]
Representative(s)Lehn, Werner, et al
Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20
81904 München / DE
[N/P]
Former [1991/44]Lehn, Werner, Dipl.-Ing., et al
Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20
D-81904 München / DE
Application number, filing date91106366.719.04.1991
[1991/44]
Priority number, dateJP1990010591121.04.1990         Original published format: JP 10591190
[1991/44]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0453998
Date:30.10.1991
Language:EN
[1991/44]
Type: B1 Patent specification 
No.:EP0453998
Date:02.07.1997
Language:EN
[1997/27]
Search report(s)(Supplementary) European search report - dispatched on:EP24.07.1991
ClassificationIPC:H01L27/108, H01L21/8242
[1997/27]
CPC:
H10B12/34 (EP); H10B12/00 (KR); H10B12/0383 (EP);
H10B12/395 (EP)
Former IPC [1991/44]H01L27/108
Designated contracting statesDE,   FR,   GB [1991/44]
TitleGerman:Halbleiterspeicherbauteil mit Bitleitung, welche aus einer Halbleiterschicht besteht[1991/44]
English:Semiconductor memory device having a bit line constituted by a semiconductor layer[1991/44]
French:Dispositif semi-conducteur à mémoire ayant une ligne de bit constituée d'une couche semi-conductrice[1991/44]
Examination procedure19.04.1991Examination requested  [1991/44]
22.04.1994Despatch of a communication from the examining division (Time limit: M04)
12.08.1994Reply to a communication from the examining division
13.03.1995Despatch of a communication from the examining division (Time limit: M06)
12.09.1995Reply to a communication from the examining division
20.06.1996Despatch of communication of intention to grant (Approval: Yes)
09.10.1996Communication of intention to grant the patent
02.01.1997Fee for grant paid
02.01.1997Fee for publishing/printing paid
Opposition(s)03.04.1998No opposition filed within time limit [1998/26]
Fees paidRenewal fee
13.04.1993Renewal fee patent year 03
11.04.1994Renewal fee patent year 04
04.04.1995Renewal fee patent year 05
16.04.1996Renewal fee patent year 06
12.04.1997Renewal fee patent year 07
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipFR02.07.1997
[2002/32]
Documents cited:Search[A]JP1248557  ;
 [A]JP1198065  ;
 [X]JP2026066  ;
 [X]EP0042084  (IBM [US]);
 [X]US4829017  (MALHI SATWINDER S [US]);
 [X]US4845537  (NISHIMURA TADASHI [JP], et al)
ExaminationEP0348046
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.