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EP0458077
European procedure
Extract from the Register of European Patents
EP About this file: EP0458077
| EP0458077 - Process and apparatus for calibrating or recalibrating a flux pressure measuring device in an MBE apparatus [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 24.09.1994 Database last updated on 03.09.2024 | Most recent event Tooltip | 24.09.1994 | No opposition filed within time limit | published on 17.11.1994 [1994/46] | Applicant(s) | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
| Former [1991/48] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 D-80333 München / DE | Inventor(s) | 01 /
Heinecke, Harald, Dr. Egmatinger Strasse 13c W-8011 Dürnhaar / DE | [1991/48] | Application number, filing date | 91106630.6 | 24.04.1991 | [1991/48] | Priority number, date | DE19904015787 | 16.05.1990 Original published format: DE 4015787 | DE19904032729 | 15.10.1990 Original published format: DE 4032729 | [1991/48] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP0458077 | Date: | 27.11.1991 | Language: | DE | [1991/48] | Type: | B1 Patent specification | No.: | EP0458077 | Date: | 24.11.1993 | Language: | DE | [1993/47] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 01.10.1991 | Classification | IPC: | C30B23/02, C30B23/06 | [1991/48] | CPC: |
C30B23/02 (EP);
C30B23/06 (EP)
| Designated contracting states | DE, FR, GB [1991/48] | Title | German: | Verfahren zum Eichen oder Nacheichen einer Strahldruck-Messeinrichtung einer Molekularstrahlexpitaxieeinrichtung und Vorrichtung zur Durchführung des Verfahrens | [1991/48] | English: | Process and apparatus for calibrating or recalibrating a flux pressure measuring device in an MBE apparatus | [1991/48] | French: | Procédé et appareillage pour le calibrage ou le recalibrage d'un dispositif qui mesure la pression de faisceau dans un appareillage d'épitaxie par faisceau moléculaire | [1991/48] | File destroyed: | 03.03.2001 | Examination procedure | 25.05.1992 | Examination requested [1992/30] | 07.05.1993 | Despatch of communication of intention to grant (Approval: Yes) | 28.05.1993 | Communication of intention to grant the patent | 19.08.1993 | Fee for grant paid | 19.08.1993 | Fee for publishing/printing paid | Opposition(s) | 25.08.1994 | No opposition filed within time limit [1994/46] | Fees paid | Renewal fee | 22.04.1993 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP59223293 ; | [A]DE3715717 (FRAUNHOFER GES FORSCHUNG [DE]); | [A]FR2583071 (TOSHIBA KK [JP]) | [A] - JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Band 3, Nr. 4, Juli-August 1985, Seiten 964-967, New York, US; R. WUNDER et al.: "Automated growth of AlxGa1-xAs and InxGa1-xAs by molecular beam epitaxy using an ion gauge flux monitor" | [A] - PATENT ABSTRACTS OF JAPAN, Band 9, Nr. 91 (C-277)[1814], 19. April 1985; & JP-A-59 223 293 (NICHIDEN ANELVA K.K.) 15-12-1984, & JP59223293 A 00000000 |