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EP0454151
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EP About this file: EP0454151
| EP0454151 - Manufacturing method of silicon single-crystal [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 29.12.1994 Database last updated on 02.11.2024 | Most recent event Tooltip | 29.12.1994 | Application deemed to be withdrawn | published on 15.02.1995 [1995/07] | Applicant(s) | For all designated states SUMITOMO SITIX CO., LTD. 1, Higashihama-cho Amagasaki Hyogo / JP | [N/P] |
| Former [1991/44] | For all designated states SUMITOMO SITIX CO., LTD. 1, Higashihama-cho Amagasaki Hyogo / JP | Inventor(s) | 01 /
Kaneko, Kyojiro 1-10-206, Shirakawa 3-chome Ibaraki, Osaka / JP | 02 /
Mizumoto, Hideyuki 378-14, Oaza-kamimabushi Kadoma, Osaka / JP | [1991/44] | Representative(s) | Wächtershäuser, Günter Wächtershäuser & Hartz Patentanwälte Ottostrasse 4 80333 München / DE | [N/P] |
| Former [1991/44] | Wächtershäuser, Günter, Prof. Dr. Patentanwalt, Tal 29 D-80331 München / DE | Application number, filing date | 91106811.2 | 26.04.1991 | [1991/44] | Priority number, date | JP19900112050 | 27.04.1990 Original published format: JP 11205090 | [1991/44] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0454151 | Date: | 30.10.1991 | Language: | EN | [1991/44] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 28.08.1991 | Classification | IPC: | C30B15/10, C30B15/14, C30B29/06 | [1991/44] | CPC: |
C30B29/06 (EP,US);
C30B15/10 (EP,US);
C30B15/14 (EP,US);
Y10S117/90 (EP,US)
| Designated contracting states | DE, FR, GB [1991/44] | Title | German: | Verfahren zur Herstellung von Siliziumeinkristall | [1991/44] | English: | Manufacturing method of silicon single-crystal | [1991/44] | French: | Procédé pour la fabrication de monocristal de silicium | [1991/44] | File destroyed: | 15.01.2000 | Examination procedure | 24.03.1992 | Examination requested [1992/21] | 11.04.1994 | Despatch of a communication from the examining division (Time limit: M04) | 22.08.1994 | Application deemed to be withdrawn, date of legal effect [1995/07] | 21.09.1994 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [1995/07] | Fees paid | Renewal fee | 27.05.1993 | Renewal fee patent year 03 | 29.04.1994 | Renewal fee patent year 04 | Penalty fee | Additional fee for renewal fee | 30.04.1993 | 03 M06 Fee paid on 27.05.1993 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]DE1223351 (SIEMENS AG); | [A]DE2016101 ; | [A]US4133969 (ZUMBRUNNEN ALLEN D); | [A]EP0135676 (IBM [US]); | [A]GB2159728 (WEDTECH CORP) | [A] - JOURNAL OF CRYSTAL GROWTH, vol. 50, no. 1, September 1980, pages 347-365; M.T. DUFFY et al.: "Development and evaluation of refractory CVD coatings as contact materials for molten silicon" |