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Extract from the Register of European Patents

EP About this file: EP0487088

EP0487088 - Method for forming semiconductor crystal and semiconductor device formed by said method [Right-click to bookmark this link]
StatusThe application has been refused
Status updated on  21.06.2002
Database last updated on 03.10.2024
Most recent event   Tooltip05.10.2005Change: Appeal number 
Applicant(s)For all designated states
CANON KABUSHIKI KAISHA
30-2, 3-chome, Shimomaruko, Ohta-ku
Tokyo / JP
[N/P]
Former [1992/22]For all designated states
CANON KABUSHIKI KAISHA
30-2, 3-chome, Shimomaruko, Ohta-ku
Tokyo / JP
Inventor(s)01 / Kawasaki, Hideshi, c/o CANON K.K.
30-2, 3-chome, Shimomaruko, Ohta-ku
Tokyo 146 / JP
02 / Tokunaga, Hiroyuki, c/o CANON K.K.
30-2, 3-chome, Shimomaruko, Ohta-ku
Tokyo 146 / JP
[1992/22]
Representative(s)Bühling, Gerhard
Patentanwaltsbüro Tiedtke-Bühling-Kinne & Partner Bavariaring 4
80336 München / DE
[N/P]
Former [1992/22]Bühling, Gerhard, Dipl.-Chem.
Patentanwaltsbüro Tiedtke-Bühling-Kinne & Partner Bavariaring 4
D-80336 München / DE
Application number, filing date91119881.021.11.1991
[1992/22]
Priority number, dateJP1990031951122.11.1990         Original published format: JP 31951190
[1992/22]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0487088
Date:27.05.1992
Language:EN
[1992/22]
Type: A3 Search report 
No.:EP0487088
Date:21.10.1992
Language:EN
[1992/43]
Search report(s)(Supplementary) European search report - dispatched on:EP01.09.1992
ClassificationIPC:H01L21/20, H01L21/36, H01L33/00
[1992/22]
CPC:
H01L33/0066 (EP,US); H01L21/0237 (EP,US); H01L21/02381 (EP,US);
H01L21/0242 (EP,US); H01L21/02532 (EP,US); H01L21/02538 (EP,US);
H01L21/02546 (EP,US); H01L21/02576 (EP,US); H01L21/02579 (EP,US);
H01L21/0262 (EP,US); H01L21/02645 (EP,US); H01L2924/0002 (EP,US) (-)
C-Set:
H01L2924/0002, H01L2924/00 (EP,US)
Designated contracting statesAT,   BE,   CH,   DE,   DK,   ES,   FR,   GB,   GR,   IT,   LI,   LU,   NL,   SE [1992/22]
TitleGerman:Verfahren zur Herstellung eines Halbleiterkristalls und dabei hergestellte Halbleiteranordnung[1992/22]
English:Method for forming semiconductor crystal and semiconductor device formed by said method[1992/22]
French:Méthode pour former un cristal semi-conducteur et composant semi-conducteur produit par ladite méthode[1992/22]
Examination procedure08.03.1993Examination requested  [1993/19]
13.09.1994Despatch of a communication from the examining division (Time limit: M06)
17.03.1995Reply to a communication from the examining division
21.05.1996Date of oral proceedings
02.08.1996Despatch of communication that the application is refused, reason: substantive examination [2002/32]
02.08.1996Minutes of oral proceedings despatched
23.04.2002Application refused, date of legal effect [2002/32]
Appeal following examination09.10.1996Appeal received No.  T1120/96
11.12.1996Statement of grounds filed
23.04.2002Result of appeal procedure: appeal of the applicant was rejected
23.04.2002Date of oral proceedings
29.04.2002Minutes of oral proceedings despatched
Fees paidRenewal fee
24.11.1993Renewal fee patent year 03
25.11.1994Renewal fee patent year 04
28.11.1995Renewal fee patent year 05
27.11.1996Renewal fee patent year 06
26.11.1997Renewal fee patent year 07
27.11.1998Renewal fee patent year 08
26.11.1999Renewal fee patent year 09
28.11.2000Renewal fee patent year 10
30.11.2001Renewal fee patent year 11
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Documents cited:Search[X]US3411051  (KILBY JACK S);
 [X]EP0276959  (CANON KK [JP]);
 [X]EP0281335  (CANON KK [JP]);
 [Y]EP0285358  (CANON KK [JP]);
 [X]EP0312401  (TOSHIBA KK [JP])
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.