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EP0445998
European procedure
Extract from the Register of European Patents
EP About this file: EP0445998
| EP0445998 - Diamond semiconductor devices [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 29.05.1998 Database last updated on 02.08.2024 | Most recent event Tooltip | 29.05.1998 | No opposition filed within time limit | published on 15.07.1998 [1998/29] | Applicant(s) | For all designated states Sumitomo Electric Industries, Ltd. 5-33, Kitahama 4-chome, Chuo-ku Osaka-shi Osaka 541 / JP | [N/P] |
| Former [1991/37] | For all designated states SUMITOMO ELECTRIC INDUSTRIES, LTD. 5-33, Kitahama 4-chome, Chuo-ku Osaka-shi, Osaka 541 / JP | Inventor(s) | 01 /
Shiomi, Hiromu, c/o Itami Works Sumimoto Electric Ind. Ltd. 1-1, Koyakita 1-chome Itami-shi, Hyogo / JP | 02 /
Nishibayashi, Yoshiki, c/o Itami Works Sumimoto Electric Ind. Ltd. 1-1, Koyakita 1-chome Itami-shi, Hyogo / JP | 03 /
Fujimori, Naoji, c/o Itami Works Sumimoto Electric Ind. Ltd. 1-1, Koyakita 1-chome Itami-shi, Hyogo / JP | [1991/37] | Representative(s) | Smith, Norman Ian, et al Cleveland 40-43 Chancery Lane London WC2A 1JQ / GB | [N/P] |
| Former [1991/37] | Smith, Norman Ian, et al F.J. CLEVELAND & COMPANY 40-43 Chancery Lane London WC2A 1JQ / GB | Application number, filing date | 91301761.2 | 04.03.1991 | [1991/37] | Priority number, date | JP19900055924 | 07.03.1990 Original published format: JP 5592490 | JP19900150340 | 08.06.1990 Original published format: JP 15034090 | [1991/37] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0445998 | Date: | 11.09.1991 | Language: | EN | [1991/37] | Type: | B1 Patent specification | No.: | EP0445998 | Date: | 23.07.1997 | Language: | EN | [1997/30] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 12.07.1991 | Classification | IPC: | H01L29/16, H01L29/872, H01L29/40 | [1997/30] | CPC: |
H01L29/1602 (EP,US)
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| Former IPC [1991/37] | H01L29/16, H01L29/91, H01L29/40 | Designated contracting states | DE, FR, GB, NL [1991/37] | Title | German: | Halbleiteranordnungen aus Diamant | [1991/37] | English: | Diamond semiconductor devices | [1991/37] | French: | Dispositifs semi-conducteurs en diamant | [1991/37] | Examination procedure | 19.02.1992 | Examination requested [1992/17] | 08.11.1993 | Despatch of a communication from the examining division (Time limit: M06) | 22.04.1994 | Reply to a communication from the examining division | 28.11.1994 | Despatch of a communication from the examining division (Time limit: M04) | 06.04.1995 | Reply to a communication from the examining division | 22.09.1995 | Despatch of a communication from the examining division (Time limit: M04) | 20.12.1995 | Reply to a communication from the examining division | 20.11.1996 | Despatch of communication of intention to grant (Approval: Yes) | 29.01.1997 | Communication of intention to grant the patent | 03.03.1997 | Fee for grant paid | 03.03.1997 | Fee for publishing/printing paid | Opposition(s) | 24.04.1998 | No opposition filed within time limit [1998/29] | Fees paid | Renewal fee | 18.03.1993 | Renewal fee patent year 03 | 26.03.1994 | Renewal fee patent year 04 | 24.03.1995 | Renewal fee patent year 05 | 06.03.1996 | Renewal fee patent year 06 | 06.03.1997 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A] - JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 28, no. 12, part 2, December 1989, pages L2153-L2154; H. SHIOMI et al.: "Field-effect transistors using boron-doped diamond epitaxial films" | [A] - IEEE ELECTRON DEVICE LETTERS, vol. EDL-8, no. 8, August 1987, pages 341-343; N.W. GEIS et al.: "High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond" | [A] - SOVIET PHYSICS SEMICONDUCTORS, vol. 19, no. 8, August 1985, pages 829-841; V.K. BAZHENOV et al.: "Synthetic diamonds in electronics (review)" | Examination | JPS62233095 | - SCIENCE, vol. 243, 24 February 1989, pages 1047-1050 | - S.M. Sze, PHYSICS OF SEMICONDUCTOR DEVICES, 2nd Edition, J. Wiley and Sons, New York, 1981, pages 566-593, 604-606 | - SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 4, August 1989, pages 605-611 |