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Extract from the Register of European Patents

EP About this file: EP0461879

EP0461879 - Semiconductor device having an isolating groove and method of making the same [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  04.04.1997
Database last updated on 24.08.2024
Most recent event   Tooltip04.04.1997No opposition filed within time limitpublished on 21.05.1997 [1997/21]
Applicant(s)For all designated states
MITSUBISHI DENKI KABUSHIKI KAISHA
2-3, Marunouchi 2-chome
Chiyoda-ku
Tokyo / JP
[N/P]
Former [1991/51]For all designated states
MITSUBISHI DENKI KABUSHIKI KAISHA
2-3, Marunouchi 2-chome Chiyoda-ku
Tokyo / JP
Inventor(s)01 / Tokunoh, Futoshi, c/o Mitsubishi Denki K.K.
Fukuoka Seisakusho, 1-1, Imajukuhigashi 1-chome
Nishi-ku, Fukuoka-shi, Fukuoka / JP
[1991/51]
Representative(s)Hackett, Sean James, et al
Marks & Clerk LLP
90 Long Acre
London
WC2E 9RA / GB
[N/P]
Former [1991/51]Hackett, Sean James, et al
MARKS & CLERK, 57-60 Lincoln's Inn Fields
London WC2A 3LS / GB
Application number, filing date91305303.912.06.1991
[1991/51]
Priority number, dateJP1990015462112.06.1990         Original published format: JP 15462190
[1991/51]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0461879
Date:18.12.1991
Language:EN
[1991/51]
Type: A3 Search report 
No.:EP0461879
Date:16.12.1992
Language:EN
[1992/51]
Type: B1 Patent specification 
No.:EP0461879
Date:29.05.1996
Language:EN
[1996/22]
Search report(s)(Supplementary) European search report - dispatched on:EP30.10.1992
ClassificationIPC:H01L29/74, H01L29/06, H01L21/332, H01L21/76
[1996/22]
CPC:
H01L21/764 (EP); H01L29/0661 (EP); H01L29/66371 (EP);
H01L29/7416 (EP)
Former IPC [1992/51]H01L29/74, H01L29/06, H01L21/332, // H01L/, H01L21/76, H01L21/306
Former IPC [1991/51]H01L29/74, H01L29/06, H01L21/332, // H01L21/76
Designated contracting statesDE,   ES,   FR,   GB [1991/51]
TitleGerman:Halbleiteranordnung mit einem isolierenden Graben und Verfahren zu deren Herstellung[1991/51]
English:Semiconductor device having an isolating groove and method of making the same[1991/51]
French:Dispositif semi-conducteur comportant un sillon d'isolation et méthode de fabrication[1991/51]
Examination procedure14.05.1993Examination requested  [1993/28]
27.06.1994Despatch of a communication from the examining division (Time limit: M04)
19.09.1994Reply to a communication from the examining division
12.05.1995Despatch of communication of intention to grant (Approval: Yes)
20.09.1995Communication of intention to grant the patent
18.12.1995Fee for grant paid
18.12.1995Fee for publishing/printing paid
Opposition(s)01.03.1997No opposition filed within time limit [1997/21]
Fees paidRenewal fee
14.06.1993Renewal fee patent year 03
11.06.1994Renewal fee patent year 04
01.05.1995Renewal fee patent year 05
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Documents cited:Search[X]JP57148371  ;
 [X]EP0164645  ;
 [A]DE3521079  ;
 [A]EP0200863  ;
 [A]EP0286855
 [X]  - PATENT ABSTRACTS OF JAPAN vol. 6, no. 251 (E-147)(1129) 10 December 1982 & JP-A-57 148 371 ( NIPPON DENKI K. K. ) 13 September 1982, & JP57148371 A 19820913
 [A]  - INTERNATIONAL ELECTRON DEVICES MEETING 1981 - TECHNICAL DIGEST December 1981, WASHINGTON, D.C., USA pages 410 - 413 JOHN X. PRZYBYSZ AND EARL S. SCHLEGEL 'THYRISTORS WITH OVERVOLTAGE SELF-PROTECTION'
 [A]  - EPE'89 3RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS October 1989, AACHEN, GERMANY pages 121 - 125 M. ISHIDOH ET AL. 'A NEW REVERSE CONDUCTING GTO'
 [A]  - IBM TECHNICAL DISCLOSURE BULLETIN. vol. 31, no. 7, December 1988, NEW YORK US pages 420 - 422 'ACCELERATED ETCHING OF SILICON IN ANISOTROPIC ETHYLENE DIAMINE-WATER-PYRAZINE-PYROCATHEOL BATH'
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.