EP0461879 - Semiconductor device having an isolating groove and method of making the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 04.04.1997 Database last updated on 24.08.2024 | Most recent event Tooltip | 04.04.1997 | No opposition filed within time limit | published on 21.05.1997 [1997/21] | Applicant(s) | For all designated states MITSUBISHI DENKI KABUSHIKI KAISHA 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo / JP | [N/P] |
Former [1991/51] | For all designated states MITSUBISHI DENKI KABUSHIKI KAISHA 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo / JP | Inventor(s) | 01 /
Tokunoh, Futoshi, c/o Mitsubishi Denki K.K. Fukuoka Seisakusho, 1-1, Imajukuhigashi 1-chome Nishi-ku, Fukuoka-shi, Fukuoka / JP | [1991/51] | Representative(s) | Hackett, Sean James, et al Marks & Clerk LLP 90 Long Acre London WC2E 9RA / GB | [N/P] |
Former [1991/51] | Hackett, Sean James, et al MARKS & CLERK, 57-60 Lincoln's Inn Fields London WC2A 3LS / GB | Application number, filing date | 91305303.9 | 12.06.1991 | [1991/51] | Priority number, date | JP19900154621 | 12.06.1990 Original published format: JP 15462190 | [1991/51] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0461879 | Date: | 18.12.1991 | Language: | EN | [1991/51] | Type: | A3 Search report | No.: | EP0461879 | Date: | 16.12.1992 | Language: | EN | [1992/51] | Type: | B1 Patent specification | No.: | EP0461879 | Date: | 29.05.1996 | Language: | EN | [1996/22] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 30.10.1992 | Classification | IPC: | H01L29/74, H01L29/06, H01L21/332, H01L21/76 | [1996/22] | CPC: |
H01L21/764 (EP);
H01L29/0661 (EP);
H01L29/66371 (EP);
H01L29/7416 (EP)
|
Former IPC [1992/51] | H01L29/74, H01L29/06, H01L21/332, // H01L/, H01L21/76, H01L21/306 | ||
Former IPC [1991/51] | H01L29/74, H01L29/06, H01L21/332, // H01L21/76 | Designated contracting states | DE, ES, FR, GB [1991/51] | Title | German: | Halbleiteranordnung mit einem isolierenden Graben und Verfahren zu deren Herstellung | [1991/51] | English: | Semiconductor device having an isolating groove and method of making the same | [1991/51] | French: | Dispositif semi-conducteur comportant un sillon d'isolation et méthode de fabrication | [1991/51] | Examination procedure | 14.05.1993 | Examination requested [1993/28] | 27.06.1994 | Despatch of a communication from the examining division (Time limit: M04) | 19.09.1994 | Reply to a communication from the examining division | 12.05.1995 | Despatch of communication of intention to grant (Approval: Yes) | 20.09.1995 | Communication of intention to grant the patent | 18.12.1995 | Fee for grant paid | 18.12.1995 | Fee for publishing/printing paid | Opposition(s) | 01.03.1997 | No opposition filed within time limit [1997/21] | Fees paid | Renewal fee | 14.06.1993 | Renewal fee patent year 03 | 11.06.1994 | Renewal fee patent year 04 | 01.05.1995 | Renewal fee patent year 05 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]JP57148371 ; | [X]EP0164645 ; | [A]DE3521079 ; | [A]EP0200863 ; | [A]EP0286855 | [X] - PATENT ABSTRACTS OF JAPAN vol. 6, no. 251 (E-147)(1129) 10 December 1982 & JP-A-57 148 371 ( NIPPON DENKI K. K. ) 13 September 1982, & JP57148371 A 19820913 | [A] - INTERNATIONAL ELECTRON DEVICES MEETING 1981 - TECHNICAL DIGEST December 1981, WASHINGTON, D.C., USA pages 410 - 413 JOHN X. PRZYBYSZ AND EARL S. SCHLEGEL 'THYRISTORS WITH OVERVOLTAGE SELF-PROTECTION' | [A] - EPE'89 3RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS October 1989, AACHEN, GERMANY pages 121 - 125 M. ISHIDOH ET AL. 'A NEW REVERSE CONDUCTING GTO' | [A] - IBM TECHNICAL DISCLOSURE BULLETIN. vol. 31, no. 7, December 1988, NEW YORK US pages 420 - 422 'ACCELERATED ETCHING OF SILICON IN ANISOTROPIC ETHYLENE DIAMINE-WATER-PYRAZINE-PYROCATHEOL BATH' |