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EP0493055
European procedure
Extract from the Register of European Patents
EP About this file: EP0493055
| EP0493055 - High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 16.01.1998 Database last updated on 31.08.2024 | Most recent event Tooltip | 17.02.2006 | Change - lapse in a contracting state Updated state(s): FR | published on 05.04.2006 [2006/14] | Applicant(s) | For all designated states Xerox Corporation Xerox Square Rochester New York 14644 / US | [N/P] |
| Former [1992/27] | For all designated states XEROX CORPORATION Xerox Square Rochester New York 14644 / US | Inventor(s) | 01 /
Thornton, Robert L. 123 Mission Drive East Palo Alto, CA 94303 / US | [1992/27] | Representative(s) | Reynolds, Julian David, et al Xerox Limited Patents Department Xerox Technical Centre Bessemer Road Welwyn Garden City Herts AL7 1HE / GB | [N/P] |
| Former [1995/38] | Reynolds, Julian David, et al Rank Xerox Ltd Patent Department Parkway Marlow Buckinghamshire SL7 1YL / GB | ||
| Former [1992/27] | Hill, Cecilia Ann Rank Xerox Ltd Patent Department Parkway Marlow Buckinghamshire SL7 1YL / GB | Application number, filing date | 91311921.0 | 23.12.1991 | [1992/27] | Priority number, date | US19900636524 | 28.12.1990 Original published format: US 636524 | [1992/27] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0493055 | Date: | 01.07.1992 | Language: | EN | [1992/27] | Type: | A3 Search report | No.: | EP0493055 | Date: | 30.12.1992 | Language: | EN | [1992/53] | Type: | B1 Patent specification | No.: | EP0493055 | Date: | 12.03.1997 | Language: | EN | [1997/11] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 09.11.1992 | Classification | IPC: | H01L27/15, H01S3/085, H01S3/19, H01S3/025 | [1993/01] | CPC: |
H01L27/153 (EP,US);
B41J2/45 (EP,US);
H01L33/0062 (EP,US);
H01S5/423 (EP,US);
H01L27/156 (EP,US)
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| Former IPC [1992/27] | H01L27/15, H01S3/025 | Designated contracting states | DE, FR, GB [1992/27] | Title | German: | Einzeln ansprechbare oberflächenemittierende Zeile von Halbleiterlasern/lichtemittierenden Dioden mit hoher Packungsdichte | [1992/27] | English: | High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays | [1992/27] | French: | Matrice à haute densité de lasers à semiconducteurs/diodes électroluminescentes à émission de surface adressables individuellement | [1992/27] | Examination procedure | 28.05.1993 | Examination requested [1993/30] | 14.03.1995 | Despatch of a communication from the examining division (Time limit: M06) | 02.09.1995 | Reply to a communication from the examining division | 08.05.1996 | Despatch of communication of intention to grant (Approval: Yes) | 23.07.1996 | Communication of intention to grant the patent | 04.11.1996 | Fee for grant paid | 04.11.1996 | Fee for publishing/printing paid | Opposition(s) | 13.12.1997 | No opposition filed within time limit [1998/10] | Fees paid | Renewal fee | 28.09.1993 | Renewal fee patent year 03 | 30.09.1994 | Renewal fee patent year 04 | 02.01.1996 | Renewal fee patent year 05 | 02.01.1997 | Renewal fee patent year 06 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FR | 12.03.1997 | [2006/14] |
| Former [1998/03] | FR | 08.08.1997 | Documents cited: | Search | [A]EP0170481 (NEC CORP [JP]); | [Y]US4831629 (PAOLI THOMAS L [US], et al) | [Y] - APPLIED PHYSICS LETTERS. vol. 56, no. 24, 11 June 1990, NEW YORK US pages 2384 - 2386; M.ORENSTEIN ET AL.: 'Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definition' | [A] - APPLIED PHYSICS LETTERS. vol. 55, no. 14, 2 October 1989, NEW YORK US pages 1412 - 1414; T.WOLF ET AL.: 'Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity-induced disordering' | [A] - IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. ED-33, no. 6, June 1986, NEW YORK US pages 845 - 849; S.RAY ET AL: 'Monolithic matrix-addressable AlGaAs-GaAs array' | [A] - APPLIED PHYSICS LETTERS. vol. 57, no. 20, 12 November 1990, NEW YORK US pages 2045 - 2047; L.W.TU ET AL.: 'Vertical-cavity surface-emitting lasers with semitransparent metallic mirrors and high quantum efficiencies' | [A] - EXTENDED ABSTACTS 22ND CONF. SOLID STATE DEVICES AND MATERIALS (JPN.J.APPL.PHYS.) 1990, TOKYO pages 769 - 772; H.J.YOO ET AL.: 'Fabrication of vertical cavity front surface emitting laser diode (FSELD) using HBT process' |