Extract from the Register of European Patents

EP About this file: EP0483319

EP0483319 - ETCHING INDIUM TIN OXIDE [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  24.06.1994
Database last updated on 28.03.2026
Most recent event   Tooltip24.06.1994Application deemed to be withdrawnpublished on 17.08.1994 [1994/33]
Applicant(s)For all designated states
Eastman Kodak Company
343 State Street
Rochester, NY 14650-2201 / US
[N/P]
Former [1992/19]For all designated states
EASTMAN KODAK COMPANY
343 State Street
Rochester, New York 14650-2201 / US
Inventor(s)01 / ROSELLE, Paul, L.
343 State Street
Rochester, NY 14650-2201 / US
02 / PAZ-PUJALT, Gustavo, Roberto
20 North Goodman, No.3
Rochester, NY 14607 / US
03 / WEXLER, Ronald, Myron
407 Eastbrooke Lane
Rochester, NY 14618 / US
[1992/33]
Former [1992/19]01 / ROSELLE, Paul, L.
710 Ridge Road East
Rochester, NY 14621 / US
02 / PAZ-PUJALT, Gustavo, Roberto
20 North Goodman, No.3
Rochester, NY 14607 / US
03 / WEXLER, Ronald, Myron
407 Eastbrooke Lane
Rochester, NY 14618 / US
Representative(s)Buff, Michel, et al
KODAK INDUSTRIE Département Brevets - CRT Zone Industrielle - B.P. 21
71102 Chalon sur Saône Cédex / FR
[N/P]
Former [1992/19]Buff, Michel, et al
Kodak-Pathé Département des Brevets et Licences CRT Centre de Recherches et de Technologie Zone Industrielle
F-71102 Chalon sur Saône Cédex / FR
Application number, filing date91909117.303.05.1991
[1992/19]
WO1991US03065
Priority number, dateUS1990052048607.05.1990         Original published format: US 520486
[1992/19]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO9117574
Date:14.11.1991
Language:EN
[1991/26]
Type: A1 Application with search report 
No.:EP0483319
Date:06.05.1992
Language:EN
The application published by WIPO in one of the EPO official languages on 14.11.1991 takes the place of the publication of the European patent application.
[1992/19]
Search report(s)International search report - published on:EP14.11.1991
ClassificationIPC:H01L31/18, G02F1/133
[1992/19]
CPC:
C04B41/009 (EP,US); C04B41/5346 (EP,US); C04B41/91 (EP,US);
H10F71/138 (EP,US); C04B2111/00844 (EP,US); Y02E10/50 (US)
C-Set:
C04B41/009, C04B35/453 (EP,US)
Designated contracting statesDE,   FR,   GB,   NL [1992/19]
TitleGerman:ÄTZEN VON INDIUM-ZINN-OXID[1992/19]
English:ETCHING INDIUM TIN OXIDE[1992/19]
French:ATTAQUE DE L'OXYDE D'INDIUM ETAIN[1992/19]
File destroyed:15.01.2000
Entry into regional phase28.01.1992National basic fee paid 
28.01.1992Designation fee(s) paid 
25.04.1992Examination fee paid 
Examination procedure25.04.1992Examination requested  [1992/26]
03.08.1993Despatch of a communication from the examining division (Time limit: M06)
15.02.1994Application deemed to be withdrawn, date of legal effect  [1994/33]
17.03.1994Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [1994/33]
Fees paidRenewal fee
19.05.1993Renewal fee patent year 03
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Cited inInternational search[X]   Japanese Journal of Applied Physics, vol. 27, no. 9, September 1988, T. Minami et al.: "Reactive ion etching of transparent conducting tin oxide films using electron cyclotron resonance hydrogen plasma", pages L1753-L1756 [X]
 [A]   Thin Solid Films, vol. 73, no. 2, February 1980, (Lausanne, CH), E.S. Braga et al.: "Plasma etching of snO2 films on silicon substrates", pages L5-L6 [A]
 [XP]   Japanese Journal od Applied Physics, vol. 29, no. 10, October 1990, M. Mohri et al.: "Plasma etching of ITO thin films using a CH4/H2 gas mixture", pages L1932-L1935 [XP]
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