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EP0497148
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EP About this file: EP0497148
| EP0497148 - Process for producing metal or semiconductor wafers [Right-click to bookmark this link] | |||
| Former [1992/32] | Process for producing metal wafers and use of silicon wafers | ||
| [1998/34] | Status | The application has been withdrawn Status updated on 12.03.1999 Database last updated on 13.11.2024 | Most recent event Tooltip | 12.03.1999 | Withdrawal of application | published on 28.04.1999 [1999/17] | Applicant(s) | For all designated states BAYER AG 51368 Leverkusen / DE | [N/P] |
| Former [1992/32] | For all designated states BAYER AG D-51368 Leverkusen / DE | Inventor(s) | 01 /
Knauth, Philippe, Dr., Faculte des Sciences de St. Jerome, case 511, Av Escadrille Normandie-Niemen F-13397 Marseille Cedex 13 / FR | 02 /
Schwirtlich, Ingo, Dr. Hausweberstrasse 26 W-4150 Krefeld / DE | [1992/32] | Application number, filing date | 92100627.6 | 16.01.1992 | [1992/32] | Priority number, date | DE19914102484 | 29.01.1991 Original published format: DE 4102484 | [1992/32] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP0497148 | Date: | 05.08.1992 | Language: | DE | [1992/32] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 15.04.1992 | Classification | IPC: | C30B15/06 | [1992/32] | CPC: |
H01L31/182 (EP,US);
C30B15/007 (EP,US);
Y02E10/546 (EP,US);
Y02P70/50 (EP,US);
Y10S117/90 (EP,US);
Y10S117/914 (EP,US)
| Designated contracting states | DE, FR, IT [1992/32] | Title | German: | Verfahren zur Herstellung von Halbleiter- oder Metallscheiben | [1998/34] | English: | Process for producing metal or semiconductor wafers | [1998/34] | French: | Procédé de fabrication de plaquettes en métal ou en matérian sémiconducteur | [1998/34] |
| Former [1992/32] | Verfahren zur Herstellung von Metallscheiben sowie die Verwendung von Siliciumscheiben | ||
| Former [1992/32] | Process for producing metal wafers and use of silicon wafers | ||
| Former [1992/32] | Procédé de fabrication de plaquettes en métal et utilisation de plaquettes de silicium | Examination procedure | 18.08.1992 | Examination requested [1992/42] | 27.01.1995 | Despatch of a communication from the examining division (Time limit: M08) | 28.09.1995 | Reply to a communication from the examining division | 07.05.1997 | Despatch of a communication from the examining division (Time limit: M04) | 08.09.1997 | Reply to a communication from the examining division | 20.02.1998 | Despatch of a communication from the examining division (Time limit: M02) | 15.04.1998 | Reply to a communication from the examining division | 21.07.1998 | Despatch of communication of intention to grant (Approval: Yes) | 14.10.1998 | Communication of intention to grant the patent | 25.01.1999 | Fee for grant paid | 25.01.1999 | Fee for publishing/printing paid | 26.02.1999 | Application withdrawn by applicant [1999/17] | Fees paid | Renewal fee | 14.12.1993 | Renewal fee patent year 03 | 12.12.1994 | Renewal fee patent year 04 | 13.12.1995 | Renewal fee patent year 05 | 12.12.1996 | Renewal fee patent year 06 | 02.02.1998 | Renewal fee patent year 07 | 01.02.1999 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]JP62212042 ; | [YD]EP0165449 (BAYER AG [DE]); | [A]EP0381051 (HELIOTRONIC GMBH [DE]); | [A]EP0016905 (ALLIED CORP [US]) | [ ] - PATENT ABSTRACTS OF JAPAN, Band 12, Nr. 67 (M-673), 02. März 1988 | [Y] - PATENT ABSTRACTS OF JAPAN vol. 12, no. 67 (M-673)2. März 1988 & JP-A-62 212 042 ( KAWASAKI STEEL CORP. ) 18. September 1987, & JP62212042 A 00000000 | [ ] - JOURNAL OF CRYSTAL GROWTH, Band 50, Nr. 1, September 1980, Amsterdam (NL); J.D. ZOOK et al., Seiten 260-278 | [A] - JOURNAL OF CRYSTAL GROWTH. Bd. 50, Nr. 1, September 1980, AMSTERDAM NL Seiten 260 - 278; J.D. ZOOK ET AL: 'SUPPORTED GROWTH OF SHEET SILICON FROM THE MELT' | [ ] - JOURNAL OF CRYSTAL GROWTH, Band 104, Nr. 1, 01. Juli 1990, Amsterdam (NL); H. LANGE et al., Seiten 108-112 | [A] - JOURNAL OF CRYSTAL GROWTH. Bd. 104, Nr. 1, 1. Juli 1990, AMSTERDAM NL Seiten 108 - 112; H. LANGE ET AL: 'RIBBON GROWTH ON SUBSTRATES (RGS) - A NEW APPROACH TO HIGH SPEED GROWTH OF SILICON RIBBONS FOR PHOTOVOLTAICS' |