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Extract from the Register of European Patents

EP About this file: EP0497319

EP0497319 - Semiconductor integrated circuit device having substrate potential detection circuit [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  28.02.1997
Database last updated on 13.07.2024
Most recent event   Tooltip28.02.1997No opposition filed within time limitpublished on 16.04.1997 [1997/16]
Applicant(s)For all designated states
NEC Corporation
7-1, Shiba 5-chome Minato-ku
Tokyo 108-8001 / JP
[N/P]
Former [1992/32]For all designated states
NEC CORPORATION
7-1, Shiba 5-chome Minato-ku
Tokyo / JP
Inventor(s)01 / Hara, Takahiro, c/o NEC Corporation
7-1, Shiba 5-chome
Minato-ku, Tokyo / JP
[1992/32]
Representative(s)Glawe, Delfs, Moll
Partnerschaft mbB von
Patent- und Rechtsanwälten
Postfach 26 01 62
80058 München / DE
[N/P]
Former [1992/32]Glawe, Delfs, Moll & Partner
Patentanwälte Postfach 26 01 62
D-80058 München / DE
Application number, filing date92101479.129.01.1992
[1992/32]
Priority number, dateJP1991002807729.01.1991         Original published format: JP 2807791
[1992/32]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP0497319
Date:05.08.1992
Language:EN
[1992/32]
Type: B1 Patent specification 
No.:EP0497319
Date:24.04.1996
Language:EN
[1996/17]
Search report(s)(Supplementary) European search report - dispatched on:EP18.05.1992
ClassificationIPC:H03F1/30, H01L27/02
[1992/32]
CPC:
H01L27/02 (EP,US); G11C11/403 (KR); G05F1/465 (EP,US);
G11C11/4074 (EP,US); H03F1/301 (EP,US)
Designated contracting statesDE,   FR,   GB,   NL [1992/32]
TitleGerman:Integrierte Halbleiter-Schaltungseinheit mit Detektionsschaltung für Substrat-Potential[1996/17]
English:Semiconductor integrated circuit device having substrate potential detection circuit[1992/32]
French:Dispositif de circuit intégré à semi-conducteur à circuit détecteur de potentiel de substrat[1992/32]
Former [1992/32]Halbleiterintegrierte Schaltungseinheit mit Substratpotentialdetektionsschaltung
Examination procedure29.01.1992Examination requested  [1992/32]
29.07.1994Despatch of a communication from the examining division (Time limit: M06)
08.02.1995Reply to a communication from the examining division
16.06.1995Despatch of communication of intention to grant (Approval: Yes)
24.07.1995Communication of intention to grant the patent
27.10.1995Fee for grant paid
27.10.1995Fee for publishing/printing paid
Opposition(s)25.01.1997No opposition filed within time limit [1997/16]
Fees paidRenewal fee
18.01.1994Renewal fee patent year 03
19.01.1995Renewal fee patent year 04
19.01.1996Renewal fee patent year 05
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Documents cited:Search[Y]JP63224665  ;
 [Y]JP59122225  ;
 [A]JP59163569
 [Y]  - PATENT ABSTRACTS OF JAPAN vol. 13, no. 018 (E-704)17 January 1989 & JP-A-63 224 665 ( MITSUBISHI ) 19 September 1988, & JP63224665 A 19880919
 [Y]  - PATENT ABSTRACTS OF JAPAN vol. 8, no. 243 (E-277)(1680) 8 November 1984 & JP-A-59 122 225 ( NIHON TEKISASU INSUTSURUMENTSU K.K. ) 14 July 1984, & JP59122225 A 19840714
 [A]  - ELECTRONICS LETTERS. vol. 26, no. 17, 16 August 1990, ENAGE GB U. GATTI ET AL:
 [A]  - PATENT ABSTRACTS OF JAPAN vol. 9, no. 016 (P-329)23 January 1985 & JP-A-59 163 569 ( MATSUSHITA DENKI SANGYO K.K. ) 14 September 1984, & JP59163569 A 19840914
Examination   - ELECTRONICS LETTERS, vol. 26, no. 17, 16 August 1990, Enage, GB, pp 1381-1382; U. GATTI et al.: "Automatic switching of substrate bias or well bias in CMOS-ICs"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.