Deutsch English Français

Contact

EP0504925

European procedure

Quick help

Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability
Register Forum

2022.02.11

More...

News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...

Extract from the Register of European Patents

EP About this file: EP0504925

EP0504925 - Multilayer base heterojunction device [Right-click to bookmark this link]
Status	No opposition filed within time limit Status updated on 29.08.2003 Database last updated on 31.08.2024
Most recent event Tooltip	26.06.2009	Change - representative	published on 29.07.2009 [2009/31]
Applicant(s)	For all designated states Texas Instruments Incorporated 13500 North Central Expressway Dallas, Texas 75265 / US
	[N/P]
Former [1992/39]	For all designated states TEXAS INSTRUMENTS INCORPORATED 13500 North Central Expressway Dallas Texas 75265 / US
Inventor(s)	01 / Bayraktaroglu, Burhan 1100 Edgefield Drive Plano, Texas 75075 / US
	[1992/39]
Representative(s)	Degwert, Hartmut, et al Prinz & Partner Rundfunkplatz 2 80335 München / DE
	[N/P]
Former [2009/31]	Degwert, Hartmut, et al Prinz & Partner GbR Rundfunkplatz 2 80335 München / DE
Former [2003/12]	Degwert, Hartmut, Dipl.-Phys., et al Prinz & Partner GbR, Manzingerweg 7 81241 München / DE
Former [1992/39]	Schwepfinger, Karl-Heinz, Dipl.-Ing., et al Prinz & Partner, Manzingerweg 7 D-81241 München / DE
Application number, filing date	92104891.4	20.03.1992
	[1992/39]
Priority number, date	US19910672809	21.03.1991 Original published format: US 672809
	[1992/39]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP0504925
	Date:	23.09.1992
	Language:	EN
	[1992/39]
	Type:	A3 Search report
	No.:	EP0504925
	Date:	16.06.1993
	Language:	EN
	[1993/24]
	Type:	B1 Patent specification
	No.:	EP0504925
	Date:	23.10.2002
	Language:	EN
	[2002/43]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	29.04.1993
Classification	IPC:	H01L29/737, H01L29/10, H01L21/331	[2001/18]
	CPC:	H01L29/7371 (EP,US); H01L29/68 (KR); H01L29/1004 (EP,US); H01L29/73 (KR); Y10S148/072 (EP,US)
	Former IPC [1992/39]	H01L29/73, H01L29/10, H01L21/331
Designated contracting states	DE, FR, GB, IT, NL [1992/39]
Title	German:	Heteroübergangsbauelement mit einer mehrschichtigen Basis	[1992/39]
	English:	Multilayer base heterojunction device	[1992/39]
	French:	Dispositif à hétérojonction à base multicouche	[1992/39]
Examination procedure	25.11.1993	Examination requested [1994/03]
	05.04.1995	Despatch of a communication from the examining division (Time limit: M06)
	28.08.1995	Reply to a communication from the examining division
	13.05.1996	Despatch of a communication from the examining division (Time limit: M06)
	02.10.1996	Reply to a communication from the examining division
	28.10.1997	Despatch of a communication from the examining division (Time limit: M06)
	23.04.1998	Reply to a communication from the examining division
	23.06.1999	Despatch of a communication from the examining division (Time limit: M06)
	03.02.2000	Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time
	12.04.2000	Reply to a communication from the examining division
	23.10.2001	Despatch of communication of intention to grant (Approval: Yes)
	13.05.2002	Communication of intention to grant the patent
	21.08.2002	Fee for grant paid
	21.08.2002	Fee for publishing/printing paid
Opposition(s)	24.07.2003	No opposition filed within time limit [2003/42]
Request for further processing for:	12.04.2000	Request for further processing filed
	12.04.2000	Full payment received (date of receipt of payment) Request granted
	04.05.2000	Decision despatched
Fees paid	Renewal fee
	22.03.1994	Renewal fee patent year 03
	27.03.1995	Renewal fee patent year 04
	26.03.1996	Renewal fee patent year 05
	25.03.1997	Renewal fee patent year 06
	25.03.1998	Renewal fee patent year 07
	29.03.1999	Renewal fee patent year 08
	30.03.2000	Renewal fee patent year 09
	27.03.2001	Renewal fee patent year 10
	25.03.2002	Renewal fee patent year 11
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition Tooltip	IT	23.10.2002
	NL	23.10.2002
	[2008/02]
Former [2003/30]	NL	23.10.2002
Documents cited:	Search	[A]JP02199873 ;
		[Y]US4873558 (ANTREASYAN ARSAM [US], et al);
		[A]EP0343563 (SIEMENS AG [DE])
		[Y] - ITO H., "MOCVD GROWN CARBON-DOPED GRADED-BASE ALGAAS/GAAS HBTS.", ELECTRONICS LETTERS, IEE STEVENAGE., GB, GB, (19901108), vol. 26., no. 23., ISSN 0013-5194, pages 1977 - 1978., XP000174287
		[A] - HOBSON W. S., ET AL., "CARBON-DOPED BASE GAAS-A1GAAS HBT'S GROWN BY MOMBE AND MOCVD REGROWTH.", IEEE ELECTRON DEVICE LETTERS., IEEE SERVICE CENTER, NEW YORK, NY., US, US, (19900601), vol. 11., no. 06., doi:10.1109/55.55267, ISSN 0741-3106, pages 241 - 243., XP000134208 DOI: http://dx.doi.org/10.1109/55.55267
		[A] - BARKER D., YASUO ASHIZAWA, TASKER P., ET AL., "EXTREMELY HIGH PEAK SPECIFIC TRANSCONDUCTANCE ALGAAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS.", IEEE ELECTRON DEVICE LETTERS., IEEE SERVICE CENTER, NEW YORK, NY., US, US, (19890701), vol. 10., no. 7., doi:10.1109/55.29663, ISSN 0741-3106, pages 313 - 315., XP000035237 DOI: http://dx.doi.org/10.1109/55.29663
		[A] - YIN L. W., ET AL., "IMPROVED BREAKDOWN VOLTAGE IN GAAS MESFET'S UTILIZING SURFACE LAYERS OF GAAS GROWN AT A LOW TEMPERATURE BY MBE.", IEEE ELECTRON DEVICE LETTERS., IEEE SERVICE CENTER, NEW YORK, NY., US, US, (19901201), vol. 11., no. 12., doi:10.1109/55.63040, ISSN 0741-3106, pages 561 - 563., XP000160779 DOI: http://dx.doi.org/10.1109/55.63040
		[A] - PATENT ABSTRACTS OF JAPAN vol. 014, no. 483 (E-993)22 October 1990 & JP-A-02 199 873 ( HITACHI ) 8 August 1990, & JP02199873 A 19900808
		[A] - IEEE ELECTRON DEVICE LETTERS vol. 5, no. 11, November 1984, NEW YORK US pages 456 - 457 R. FISCHER ET AL. 'GAAS/ALGAAS MODFET'S GROWN ON (100) GE'
	Examination	- "Very high speed integrated circuits: Heterostructure", SEMICONDUCTORS AMD SEMIMETALS, ACADEMIC PRESS, BOSTON, US, vol. 30, pages 208 - 210

The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.

Legal notice
Terms of use
24.2.25; 34p