EP0504925 - Multilayer base heterojunction device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 29.08.2003 Database last updated on 31.08.2024 | Most recent event Tooltip | 26.06.2009 | Change - representative | published on 29.07.2009 [2009/31] | Applicant(s) | For all designated states Texas Instruments Incorporated 13500 North Central Expressway Dallas, Texas 75265 / US | [N/P] |
Former [1992/39] | For all designated states TEXAS INSTRUMENTS INCORPORATED 13500 North Central Expressway Dallas Texas 75265 / US | Inventor(s) | 01 /
Bayraktaroglu, Burhan 1100 Edgefield Drive Plano, Texas 75075 / US | [1992/39] | Representative(s) | Degwert, Hartmut, et al Prinz & Partner Rundfunkplatz 2 80335 München / DE | [N/P] |
Former [2009/31] | Degwert, Hartmut, et al Prinz & Partner GbR Rundfunkplatz 2 80335 München / DE | ||
Former [2003/12] | Degwert, Hartmut, Dipl.-Phys., et al Prinz & Partner GbR, Manzingerweg 7 81241 München / DE | ||
Former [1992/39] | Schwepfinger, Karl-Heinz, Dipl.-Ing., et al Prinz & Partner, Manzingerweg 7 D-81241 München / DE | Application number, filing date | 92104891.4 | 20.03.1992 | [1992/39] | Priority number, date | US19910672809 | 21.03.1991 Original published format: US 672809 | [1992/39] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0504925 | Date: | 23.09.1992 | Language: | EN | [1992/39] | Type: | A3 Search report | No.: | EP0504925 | Date: | 16.06.1993 | Language: | EN | [1993/24] | Type: | B1 Patent specification | No.: | EP0504925 | Date: | 23.10.2002 | Language: | EN | [2002/43] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 29.04.1993 | Classification | IPC: | H01L29/737, H01L29/10, H01L21/331 | [2001/18] | CPC: |
H01L29/7371 (EP,US);
H01L29/68 (KR);
H01L29/1004 (EP,US);
H01L29/73 (KR);
Y10S148/072 (EP,US)
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Former IPC [1992/39] | H01L29/73, H01L29/10, H01L21/331 | Designated contracting states | DE, FR, GB, IT, NL [1992/39] | Title | German: | Heteroübergangsbauelement mit einer mehrschichtigen Basis | [1992/39] | English: | Multilayer base heterojunction device | [1992/39] | French: | Dispositif à hétérojonction à base multicouche | [1992/39] | Examination procedure | 25.11.1993 | Examination requested [1994/03] | 05.04.1995 | Despatch of a communication from the examining division (Time limit: M06) | 28.08.1995 | Reply to a communication from the examining division | 13.05.1996 | Despatch of a communication from the examining division (Time limit: M06) | 02.10.1996 | Reply to a communication from the examining division | 28.10.1997 | Despatch of a communication from the examining division (Time limit: M06) | 23.04.1998 | Reply to a communication from the examining division | 23.06.1999 | Despatch of a communication from the examining division (Time limit: M06) | 03.02.2000 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time | 12.04.2000 | Reply to a communication from the examining division | 23.10.2001 | Despatch of communication of intention to grant (Approval: Yes) | 13.05.2002 | Communication of intention to grant the patent | 21.08.2002 | Fee for grant paid | 21.08.2002 | Fee for publishing/printing paid | Opposition(s) | 24.07.2003 | No opposition filed within time limit [2003/42] | Request for further processing for: | 12.04.2000 | Request for further processing filed | 12.04.2000 | Full payment received (date of receipt of payment) Request granted | 04.05.2000 | Decision despatched | Fees paid | Renewal fee | 22.03.1994 | Renewal fee patent year 03 | 27.03.1995 | Renewal fee patent year 04 | 26.03.1996 | Renewal fee patent year 05 | 25.03.1997 | Renewal fee patent year 06 | 25.03.1998 | Renewal fee patent year 07 | 29.03.1999 | Renewal fee patent year 08 | 30.03.2000 | Renewal fee patent year 09 | 27.03.2001 | Renewal fee patent year 10 | 25.03.2002 | Renewal fee patent year 11 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | IT | 23.10.2002 | NL | 23.10.2002 | [2008/02] |
Former [2003/30] | NL | 23.10.2002 | Documents cited: | Search | [A]JP02199873 ; | [Y]US4873558 (ANTREASYAN ARSAM [US], et al); | [A]EP0343563 (SIEMENS AG [DE]) | [Y] - ITO H., "MOCVD GROWN CARBON-DOPED GRADED-BASE ALGAAS/GAAS HBTS.", ELECTRONICS LETTERS, IEE STEVENAGE., GB, GB, (19901108), vol. 26., no. 23., ISSN 0013-5194, pages 1977 - 1978., XP000174287 | [A] - HOBSON W. S., ET AL., "CARBON-DOPED BASE GAAS-A1GAAS HBT'S GROWN BY MOMBE AND MOCVD REGROWTH.", IEEE ELECTRON DEVICE LETTERS., IEEE SERVICE CENTER, NEW YORK, NY., US, US, (19900601), vol. 11., no. 06., doi:10.1109/55.55267, ISSN 0741-3106, pages 241 - 243., XP000134208 DOI: http://dx.doi.org/10.1109/55.55267 | [A] - BARKER D., YASUO ASHIZAWA, TASKER P., ET AL., "EXTREMELY HIGH PEAK SPECIFIC TRANSCONDUCTANCE ALGAAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS.", IEEE ELECTRON DEVICE LETTERS., IEEE SERVICE CENTER, NEW YORK, NY., US, US, (19890701), vol. 10., no. 7., doi:10.1109/55.29663, ISSN 0741-3106, pages 313 - 315., XP000035237 DOI: http://dx.doi.org/10.1109/55.29663 | [A] - YIN L. W., ET AL., "IMPROVED BREAKDOWN VOLTAGE IN GAAS MESFET'S UTILIZING SURFACE LAYERS OF GAAS GROWN AT A LOW TEMPERATURE BY MBE.", IEEE ELECTRON DEVICE LETTERS., IEEE SERVICE CENTER, NEW YORK, NY., US, US, (19901201), vol. 11., no. 12., doi:10.1109/55.63040, ISSN 0741-3106, pages 561 - 563., XP000160779 DOI: http://dx.doi.org/10.1109/55.63040 | [A] - PATENT ABSTRACTS OF JAPAN vol. 014, no. 483 (E-993)22 October 1990 & JP-A-02 199 873 ( HITACHI ) 8 August 1990, & JP02199873 A 19900808 | [A] - IEEE ELECTRON DEVICE LETTERS vol. 5, no. 11, November 1984, NEW YORK US pages 456 - 457 R. FISCHER ET AL. 'GAAS/ALGAAS MODFET'S GROWN ON (100) GE' | Examination | - "Very high speed integrated circuits: Heterostructure", SEMICONDUCTORS AMD SEMIMETALS, ACADEMIC PRESS, BOSTON, US, vol. 30, pages 208 - 210 |