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EP0533203
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EP About this file: EP0533203
| EP0533203 - Method for selectively etching a III-V semiconductor, in the production of a field effect transistor [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 05.12.2003 Database last updated on 06.11.2024 | Most recent event Tooltip | 05.12.2003 | Application deemed to be withdrawn | published on 21.01.2004 [2004/04] | Applicant(s) | For all designated states Sony Corporation 7-35, Kitashinagawa 6-chome Shinagawa-ku Tokyo / JP | [N/P] |
| Former [1993/12] | For all designated states SONY CORPORATION 7-35, Kitashinagawa 6-chome Shinagawa-ku Tokyo / JP | Inventor(s) | 01 /
Mizunuma, Yasuyuki c/o Sony Corporation, 7-35 Kitashinagawa 6-chome Shinagawa-ku, Tokyo / JP | [1993/12] | Representative(s) | Müller, Frithjof E. Müller Hoffmann & Partner Patentanwälte Innere Wiener Strasse 17 81667 München / DE | [N/P] |
| Former [1997/12] | Müller, Frithjof E., Dipl.-Ing. Patentanwälte MÜLLER & HOFFMANN, Innere Wiener Strasse 17 81667 München / DE | ||
| Former [1993/45] | TER MEER - MÜLLER - STEINMEISTER & PARTNER Mauerkircherstrasse 45 D-81679 München / DE | ||
| Former [1993/12] | Patentanwälte TER MEER - MÜLLER - STEINMEISTER & PARTNER Mauerkircherstrasse 45 D-81679 München / DE | Application number, filing date | 92116042.0 | 18.09.1992 | [1993/12] | Priority number, date | JP19910268536 | 20.09.1991 Original published format: JP 26853691 | [1993/12] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0533203 | Date: | 24.03.1993 | Language: | EN | [1993/12] | Type: | A3 Search report | No.: | EP0533203 | Date: | 16.08.1995 | Language: | EN | [1995/33] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.07.1995 | Classification | IPC: | H01L21/306, H01L21/335, H01L21/338, H01L21/28 | [1995/29] | CPC: |
H01L29/66863 (EP,US);
H01L21/28587 (EP,US);
H01L21/30621 (EP,US);
H01L29/66462 (EP,US);
Y10S977/782 (EP,US);
Y10S977/815 (EP,US);
Y10S977/888 (EP,US)
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| Former IPC [1993/12] | H01L21/306, H01L21/338, H01L21/28 | Designated contracting states | DE, FR, GB [1993/12] | Title | German: | Verfahren zum selektiven Ätzen eines III-V Halbleiters, zur Herstellung eines Feldeffekt-Transistors | [1993/12] | English: | Method for selectively etching a III-V semiconductor, in the production of a field effect transistor | [1993/12] | French: | Méthode de gravure sélective d'un semiconducteur III-V, lors de la production d'un transistor à effet de champ | [1993/12] | Examination procedure | 18.01.1996 | Examination requested [1996/13] | 20.10.1997 | Despatch of a communication from the examining division (Time limit: M04) | 12.11.1997 | Reply to a communication from the examining division | 01.10.1999 | Despatch of a communication from the examining division (Time limit: M04) | 13.01.2000 | Reply to a communication from the examining division | 01.04.2003 | Application deemed to be withdrawn, date of legal effect [2004/04] | 14.08.2003 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2004/04] | Fees paid | Renewal fee | 08.09.1994 | Renewal fee patent year 03 | 08.09.1995 | Renewal fee patent year 04 | 12.09.1996 | Renewal fee patent year 05 | 10.09.1997 | Renewal fee patent year 06 | 09.09.1998 | Renewal fee patent year 07 | 13.09.1999 | Renewal fee patent year 08 | 13.09.2000 | Renewal fee patent year 09 | 12.09.2001 | Renewal fee patent year 10 | Penalty fee | Additional fee for renewal fee | 30.09.2002 | 11 M06 Not yet paid | 30.09.2003 | 12 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [PXPA]JPH04105319 ; | [XA]EP0348944 (NEC CORP [JP]) [X] 6,10 * page 11, line 40 - line 55; figures 6A-6C * * page 12, line 4 - line 16; figure 7A 7B * * page 12, line 31 - line 33 * [A] 1-5,7-9; | [XA]EP0244304 (THOMSON CSF [FR]) [X] 6,10 * column 1, line 4 - line 15 * * column 1, line 31 - column 2, line 12 * * column 2, line 55 - column 4, line 30; figures 1,2 * * column 6, line 22 - line 31; figure 5 * [A] 1,2,5,7,9; | [A]US4992136 (TACHI SHINICHI [JP], et al) [A] 1-4 * column 1, line 25 - line 44 * * column 2, line 15 - line 35; claim 1 * * column 2, line 64 - line 68 * | [PXA] - PATENT ABSTRACTS OF JAPAN, (19920724), vol. 016, no. 344, Database accession no. (E - 1239), & JP04105319 A 19920407 (SONY CORP) [PX] 1-6,9 * abstract * [PA] 7,8,10 | [XA] - S. SALIMIAN ET AL., "Damage studies of dry etched GaAs recessed gates for field effect transistors", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, NEW YORK US, vol. 9, no. 1, pages 114 - 119 [X] 6,10 * page 114; figures 1,2 * [A] 1-4,7,8 | [X] - PEARTON S J ET AL, "DRY ETCHING OF GAAS, ALGAAS, AND GASB IN HYDROCHLOROFLUOROCARBON MIXTURES", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 137, no. 12, pages 3892 - 3899 [X] 6 * page 3892; figures 1-4 * | [A] - A.E. GEISSBERGER ET AL., "Application of plasma etching to via hole fabrication in thick GaAs substrates.", J. VAC. SCI. TECHNOL, vol. A3, no. 3, pages 863 - 866 [A] 1,3-5,7-9 * page 863, column R; table 1 * |