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EP0544357
European procedure
Extract from the Register of European Patents
EP About this file: EP0544357
| EP0544357 - Radiation-emitting semiconductor diode [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 11.07.1997 Database last updated on 02.11.2024 | Most recent event Tooltip | 28.12.2002 | Lapse of the patent in a contracting state | published on 12.02.2003 [2003/07] | Applicant(s) | For all designated states Koninklijke Philips Electronics N.V. Groenewoudseweg 1 5621 BA Eindhoven / NL | [N/P] |
| Former [1993/22] | For all designated states Philips Electronics N.V. Groenewoudseweg 1 NL-5621 BA Eindhoven / NL | Inventor(s) | 01 /
Van der Poel, Carolus Johannes c/o Int. Octrooibureau B.V., Prof. Holstlaan 6 NL-5656 AA Eindhoven / NL | 02 /
Valster, Adriaan c/o Int. Octrooibureau B.V., Prof. Holstlaan 6 NL-5656 AA Eindhoven / NL | 03 /
Boermans, Michael Jozef Bernad c/o Int. Octrooibureau B.V., Prof. Holstlaan 6 NL-5656 AA Eindhoven / NL | [1993/22] | Representative(s) | Smeets, Eugenius Theodorus J. M. (NL), et al Octrooibureau Smeets Poelhekkelaan 16 NL-5644 TN Eindhoven / NL | [N/P] |
| Former [1993/22] | Smeets, Eugenius Theodorus J. M. (NL), et al Internationaal Octrooibureau B.V. Prof. Holstlaan 6 NL-5656 AA Eindhoven / NL | Application number, filing date | 92203545.6 | 18.11.1992 | [1993/22] | Priority number, date | EP19910203087 | 26.11.1991 Original published format: EP 91203087 | [1993/22] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0544357 | Date: | 02.06.1993 | Language: | EN | [1993/22] | Type: | B1 Patent specification | No.: | EP0544357 | Date: | 04.09.1996 | Language: | EN | [1996/36] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 19.03.1993 | Classification | IPC: | H01L33/00 | [1993/22] | CPC: |
H01L33/30 (EP,US);
H01L33/0025 (EP,US);
H01S5/32325 (EP,US);
H01S5/20 (EP,US);
H01S5/3201 (EP,US)
| Designated contracting states | DE, FR, GB, NL [1993/22] | Title | German: | Strahlung emittierende Halbleiterdiode | [1993/22] | English: | Radiation-emitting semiconductor diode | [1993/22] | French: | Diode semiconductrice émettrice de rayonnement | [1993/22] | Examination procedure | 25.11.1993 | Examination requested [1994/03] | 08.03.1995 | Despatch of a communication from the examining division (Time limit: M04) | 05.04.1995 | Reply to a communication from the examining division | 30.10.1995 | Despatch of communication of intention to grant (Approval: Yes) | 08.03.1996 | Communication of intention to grant the patent | 18.06.1996 | Fee for grant paid | 18.06.1996 | Fee for publishing/printing paid | Opposition(s) | 05.06.1997 | No opposition filed within time limit [1997/35] | Fees paid | Renewal fee | 30.11.1994 | Renewal fee patent year 03 | 30.11.1995 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | NL | 04.09.1996 | [2003/07] | Documents cited: | Search | [A]JP01239891 ; | [A]JP01243490 ; | [A]US5016252 (HAMADA HIROKI [JP], et al) | [A] - GALLIUM ARSENIDE AND RELATED COMPOUNDS 1991 9 September 1991, SEATTLE. USA pages 529 - 534 BUCHAN ET AL. 'THE GROWTH OF Ga0.52In0.48P AND Al0.18Ga0.34In0.48P ON LENS-SHAPED SUBSTRATES BY METALORGANIC VAPOR PHASE EPITAXY' | [A] - JOURNAL OF CRYSTAL GROWTH vol. 107, no. 1/4, 1 January 1991, AMSTERDAM NL pages 403 - 409 VALSTER ET AL. 'HIGH QUALITY AlxGa1-x-yInyP ALLOYS GROWN BY MOVPE ON (311)B GaAs SUBSTRATES' | [A] - PATENT ABSTRACTS OF JAPAN vol. 13, no. 574 (E-863)19 December 1989 & JP-A-01 239 891 ( HITACHI LTD ) 25 September 1989, & JP01239891 A 19890925 | [A] - PATENT ABSTRACTS OF JAPAN vol. 13, no. 578 (E-864)20 December 1989 & JP-A-01 243 490 ( HITACHI LTD ) 28 September 1989, & JP01243490 A 19890928 | Examination | EP0457571 |